Influence of the Location of a Hypothetical Vacuum Pore on the Quantum Confinement of Excitons in CuCl Nanocrystals Formed in Borosilicate Glasses

2004 ◽  
Vol 30 (1) ◽  
pp. 26-31
Author(s):  
M. I. Vasil'ev ◽  
D. K. Loginov
1997 ◽  
Vol 11 (06) ◽  
pp. 275-281
Author(s):  
Bingyou Miao ◽  
Jianmin Hong ◽  
Pingping Chen ◽  
Xiaoli Yuan ◽  
Min Han ◽  
...  

Two samples of thin films, assembled by CuCl nanoclusters, have been prepared by the gas evaporation technique. The CuCl nanoclusters were deposited on monocrystalline silicon and quartz substrates and then coated with a layer of NaCl to prevent oxidation of the CuCl nanoclusters. From transmission electron microscope and selected area diffraction, it is clear that the two samples consist of CuCl nanocrystals and Cu aggregates and the mean diameters are about 3 nm and 6 nm. From the absorption and photoluminescence (PL) spectra of the two samples carried out at ~300 K, we found that the peaks of exciton absorption do not show up and luminescence peaks shift to lower energies, possibly due to the strong coupling between exciton and phonon. At 77 K, the PL peaks of excitons broadened by exciton–phonon coupling have been observed, in approximate agreement with the values calculated by the quantum confinement model. The broad peaks of emission from trapped states or bands have also been observed at 77 K. In addition, the interaction between exciton and phonon is stronger in the sample with mean diameter about 3 nm according to a larger broadening and redshift of the PL peak from excitons, in qualitative agreement with theoretical prediction.


2008 ◽  
Author(s):  
Augustin J. Hong ◽  
Kang L. Wang ◽  
Wei Lek Kwan ◽  
Yang Yang ◽  
Dayanara Parra ◽  
...  

1998 ◽  
Vol 536 ◽  
Author(s):  
N. Ozaki ◽  
Y. Ohno ◽  
S. Takeda ◽  
M. Hirata

AbstractWe have grown Si nanowhiskers on a Si{1111} surface via the vapor-liquid-solid (VLS) mechanism. The minimum diameter of the crystalline is 3nm and is close to the critical value for the effect of quantum confinement. We have found that many whiskers grow epitaxially or non-epitaxially on the substrate along the 〈112〉 direction as well as the 〈111〉 direction.In our growth procedure, we first deposited gold on a H-terminated Si{111} surface and prepared the molten catalysts of Au and Si at 500°C. Under the flow of high pressure silane gas, we have succeeded in producing the nanowhiskers without any extended defects. We present the details of the growth condition and discuss the growth mechanism of the nanowhiskers extending along the 〈112〉 direction.


2003 ◽  
Vol 775 ◽  
Author(s):  
Suk-Ho Choi ◽  
Jun Sung Bae ◽  
Kyung Jung Kim ◽  
Dae Won Moon

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.


2019 ◽  
Author(s):  
Nathan Neale ◽  
Michael Carroll ◽  
Rens Limpens ◽  
Lance Wheeler ◽  
Gregory Pach

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