Wave theoretical analysis of spot excitation near-field scanning method for optical fiber index profiling: Effect of finite spot size

Radio Science ◽  
1982 ◽  
Vol 17 (1) ◽  
pp. 187-195
Author(s):  
M. Kitsuregawa ◽  
H. Nakada ◽  
T. Kamiya ◽  
H. Yanai
Author(s):  
Jeff Dunnihoo ◽  
Pasi Tamminen ◽  
Toni Viheriäkoski

Abstract In this study we present a novel method to use a field collapse method together with fully automated near field scanning equipment to construct E- and H-field information of a system during transient ESD events. This inexpensive method provides an alternative way for system designers to validate and analyze the EMC/ESD capability of electronic systems without TLP pulsers, ESD simulators, or precision inductive current probes.


2004 ◽  
Vol 812 ◽  
Author(s):  
Vladimir V. Talanov ◽  
Robert L. Moreland ◽  
André Scherz ◽  
Andrew R. Schwartz ◽  
Youfan Liu

AbstractWe have developed a novel microwave near-field scanning probe technique for non-contact measurement of the dielectric constant of low-k films. The technique is non-destructive, noninvasive and can be used on both porous and non-porous dielectrics without any sample preparation. The probe has a few-micron spot size, which makes the technique well suited for real time low-k metrology on production wafers. For dielectrics with k<4 the precision and accuracy are better than 2% and 5%, respectively. Results for both SOD and CVD low-k films are presented and show excellent correlation with Hg-probe measurements. Results for k-value mapping on blanket 200mm wafers are presented as well.


2007 ◽  
Vol 49 (2) ◽  
pp. 391-400 ◽  
Author(s):  
Yolanda Vives-Gilabert ◽  
Christian Arcambal ◽  
Anne Louis ◽  
Franois de Daran ◽  
Philippe Eudeline ◽  
...  

2008 ◽  
Author(s):  
Sy-Bor Wen

Different nano-patterns have been generated with the same near field scanning optical microscope (NSOM) tips with multiple femtosecond laser pulses in different background gases. It is demonstrated that significant energy was transferred from the NSOM probe to a pure silicon surface for the generation of nano-protrusions and nano-craters, which shows the possibility of nano-fabrication with the present experimental configuration. In order to understand the heating effect of the target and the relationship between the generations of nano-craters, a corresponding theoretical analysis considering the wave format light propagation within a single tapering NSOM probe (first order approximation) and the subsequent light absorption in a target is established. This analysis show that electron temperature of around the nano-scale laser spot of target can be very high (&gt;∼10,000 K) during the laser pulse. However, both the photoexcited electron number density and lattice temperature are much less the threshold for a thermal and non-thermal evaporation. Therefore, supplementary mechanisms in additional to pure pulsed light absorption are required for generation of nano-craters on a target if a single tapering angle NSOM probe is applied.


2010 ◽  
Vol 110 (3) ◽  
pp. 211-215 ◽  
Author(s):  
H. Chibani ◽  
K. Dukenbayev ◽  
M. Mensi ◽  
S.K. Sekatskii ◽  
G. Dietler

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