Scanning Near-Field Microwave Probe for In-line Metrology of Low-K Dielectrics

2004 ◽  
Vol 812 ◽  
Author(s):  
Vladimir V. Talanov ◽  
Robert L. Moreland ◽  
André Scherz ◽  
Andrew R. Schwartz ◽  
Youfan Liu
Keyword(s):  
Near Field ◽  
Spot Size ◽  
Excellent Correlation ◽  
K Value ◽  
Microwave Probe ◽  
Near Field Scanning ◽  
Non Destructive ◽  
Low K ◽  
Probe Measurements ◽  
Better Than

AbstractWe have developed a novel microwave near-field scanning probe technique for non-contact measurement of the dielectric constant of low-k films. The technique is non-destructive, noninvasive and can be used on both porous and non-porous dielectrics without any sample preparation. The probe has a few-micron spot size, which makes the technique well suited for real time low-k metrology on production wafers. For dielectrics with k<4 the precision and accuracy are better than 2% and 5%, respectively. Results for both SOD and CVD low-k films are presented and show excellent correlation with Hg-probe measurements. Results for k-value mapping on blanket 200mm wafers are presented as well.

Near-field Scanning Microwave Probe for Rapid Detection of Nonvisual and Parametric Defects in Cu/low-k Interconnect on Production Wafers

2006 ◽  
Author(s):  
Vladimir V. Talanov ◽  
Andrew R. Schwartz
Keyword(s):  
Failure Analysis ◽  
Rapid Detection ◽  
Near Field ◽  
Electrical Measurements ◽  
Visual Defects ◽  
Microwave Probe ◽  
Near Field Scanning ◽  
Low K

Abstract We demonstrate the use of a near-field scanned microwave probe (NSMP) for failure analysis (FA) of parametric defects in Cu/low-k interconnect that leave no physical remnant (sometimes referred to as “non-visual defects”). This technique is rapid, quantitative, non-contact, and provides direct electrical measurements.

Near-field scanning microwave probe based on a dielectric resonator

2001 ◽  
Vol 72 (4) ◽  
pp. 2073-2079 ◽  
Author(s):  
M. Abu-Teir ◽  
M. Golosovsky ◽  
D. Davidov ◽  
A. Frenkel ◽  
H. Goldberger
Keyword(s):  
Dielectric Resonator ◽  
Near Field ◽  
Microwave Probe ◽  
Near Field Scanning

A Near-Field Microwave Probe for Quantitative Characterization of Dielectric Thin Films

2004 ◽  
Vol 838 ◽  
Author(s):  
Vladimir V. Talanov ◽  
Robert L. Moreland ◽  
André Scherz ◽  
Bin Ming ◽  
Andrew R. Schwartz
Keyword(s):  
Dielectric Constant ◽  
Semiconductor Industry ◽  
Near Field ◽  
Spot Size ◽  
Dielectric Films ◽  
Quantitative Measurements ◽  
Sample Separation ◽  
Film Dielectric ◽  
Microwave Probe ◽  
Thin Dielectric Films

ABSTRACTWe have developed a novel scanning near-field microwave probe capable of precise quantitative measurements of dielectric constant of thin dielectric films. The technique is noncontact and has a few-micron sampling spot-size. For dielectric films with k<7 and thickness down to 200 nm the probe provides precision and accuracy better than 1% and 5%, respectively. The probe is based on a balanced parallel-plate microwave transmission line operating at 4 GHz. Unlike the apertureless STM- or AFM-based schemes that have been previously employed, our “apertured” approach allows for truly quantitative measurements on a few-micron length scale with result that is insensitive to the material property outside this probing volume.We will present quantitative measurements on a variety of so-called low-k dielectric films, which are of great interest to the semiconductor industry as replacements for SiO2 in interconnect wiring. When the probe is placed in close proximity to the film under test its fringe capacitance is governed by the sample permittivity, the tip geometry, and the tip-sample separation. We measure this capacitance with a resolution down to 30 zF using a microwave resonator. Extraction of the film dielectric constant is based on an original approach providing for removal of the substrate contribution. Bulk Si and a set of variable thickness thermal oxide films are employed to calibrate the probe. There is no need to know the absolute value of the tip-sample separation for either measurement or calibration procedures; this separation must only be kept nominally the same for both measurements, which is achieved by a virtually material independent shear-force distance control.

scholarly journals Noncontact dielectric constant metrology of low-k interconnect films using a near-field scanned microwave probe

2006 ◽  
Vol 88 (19) ◽  
pp. 192906 ◽  
Author(s):  
Vladimir V. Talanov ◽  
André Scherz ◽  
Robert L. Moreland ◽  
Andrew R. Schwartz
Keyword(s):  
Dielectric Constant ◽  
Near Field ◽  
Microwave Probe ◽  
Low K
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