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Direct observation of single-charge-detection capability of nanowire field-effect transistors
Nature Nanotechnology
◽
10.1038/nnano.2010.180
◽
2010
◽
Vol 5
(10)
◽
pp. 737-741
◽
Cited By ~ 40
Author(s):
J. Salfi
◽
I. G. Savelyev
◽
M. Blumin
◽
S. V. Nair
◽
H. E. Ruda
Keyword(s):
Direct Observation
◽
Field Effect
◽
Field Effect Transistors
◽
Single Charge
◽
Detection Capability
◽
Charge Detection
Download Full-text
Related Documents
Cited By
References
Erratum: Direct observation of single-charge-detection capability of nanowire field-effect transistors
Nature Nanotechnology
◽
10.1038/nnano.2010.242
◽
2010
◽
Vol 5
(12)
◽
pp. 885-885
◽
Cited By ~ 1
Author(s):
J. Salfi
◽
I. G. Savelyev
◽
M. Blumin
◽
S. V. Nair
◽
H. E. Ruda
Keyword(s):
Direct Observation
◽
Field Effect
◽
Field Effect Transistors
◽
Single Charge
◽
Detection Capability
◽
Charge Detection
Download Full-text
Direct observation of the hysteretic Fermi level modulation in monolayer MoS2 field effect transistors
Current Applied Physics
◽
10.1016/j.cap.2019.11.021
◽
2020
◽
Vol 20
(2)
◽
pp. 298-303
Author(s):
Yuhang Wang
◽
Dongyong Li
◽
Xubo Lai
◽
Boyang Liu
◽
Yibao Chen
◽
...
Keyword(s):
Fermi Level
◽
Direct Observation
◽
Field Effect
◽
Field Effect Transistors
◽
Monolayer Mos2
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Direct Observation of Charge Carrier Concentrations in Operating Field-Effect Transistors of Pentacene by Electron Spin Resonance
10.7567/ssdm.2011.b-6-2
◽
2011
◽
Author(s):
H. Tanaka
◽
M. Hirate
◽
S. Watanabe
◽
H. Ito
◽
K. Marumoto
◽
...
Keyword(s):
Electron Spin Resonance
◽
Charge Carrier
◽
Electron Spin
◽
Direct Observation
◽
Field Effect
◽
Field Effect Transistors
◽
Operating Field
◽
Spin Resonance
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Direct observation of the charge carrier concentration in organic field-effect transistors by electron spin resonance
Applied Physics Letters
◽
10.1063/1.3100193
◽
2009
◽
Vol 94
(10)
◽
pp. 103308
◽
Cited By ~ 31
Author(s):
Hisaaki Tanaka
◽
Shun-ichiro Watanabe
◽
Hiroshi Ito
◽
Kazuhiro Marumoto
◽
Shin-ichi Kuroda
Keyword(s):
Electron Spin Resonance
◽
Charge Carrier
◽
Carrier Concentration
◽
Electron Spin
◽
Direct Observation
◽
Field Effect
◽
Field Effect Transistors
◽
Charge Carrier Concentration
◽
Organic Field Effect Transistors
◽
Spin Resonance
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Direct observation of localized high current effects in gallium arsenide field effect transistors
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996
◽
10.1109/gaas.1996.567632
◽
2002
◽
Author(s):
M.P. Dugan
Keyword(s):
Gallium Arsenide
◽
Direct Observation
◽
Field Effect
◽
Field Effect Transistors
◽
High Current
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Direct observation of channel hot-electron energy in short-channel metal-oxide-semiconductor field-effect transistors
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
◽
10.1109/icsict.2010.5667466
◽
2010
◽
Author(s):
Gang Zhang
◽
Cheng Yang
◽
Hua-Min Li
◽
Tian-zi Shen
◽
Won Jong Yoo
Keyword(s):
Metal Oxide
◽
Electron Energy
◽
Direct Observation
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Hot Electron
◽
Short Channel
Download Full-text
Single-charge transport in ambipolar silicon nanoscale field-effect transistors
Applied Physics Letters
◽
10.1063/1.4919110
◽
2015
◽
Vol 106
(17)
◽
pp. 172101
◽
Cited By ~ 5
Author(s):
Filipp Mueller
◽
Georgios Konstantaras
◽
Wilfred G. van der Wiel
◽
Floris A. Zwanenburg
Keyword(s):
Charge Transport
◽
Field Effect
◽
Field Effect Transistors
◽
Single Charge
Download Full-text
Room-temperature single charge sensitivity in carbon nanotube field-effect transistors
Applied Physics Letters
◽
10.1063/1.2399942
◽
2006
◽
Vol 89
(24)
◽
pp. 243502
◽
Cited By ~ 15
Author(s):
H. B. Peng
◽
M. E. Hughes
◽
J. A. Golovchenko
Keyword(s):
Carbon Nanotube
◽
Field Effect
◽
Room Temperature
◽
Field Effect Transistors
◽
Single Charge
Download Full-text
Giant random telegraph signal generated by single charge trapping in submicron n-metal-oxide-semiconductor field-effect transistors
Journal of Applied Physics
◽
10.1063/1.2939272
◽
2008
◽
Vol 103
(12)
◽
pp. 123707
◽
Cited By ~ 16
Author(s):
Enrico Prati
◽
Marco Fanciulli
◽
Giorgio Ferrari
◽
Marco Sampietro
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Charge Trapping
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Single Charge
◽
Random Telegraph Signal
Download Full-text
Direct observation of hot-electron energy distribution in silicon metal–oxide–semiconductor field-effect transistors
Applied Physics Letters
◽
10.1063/1.124613
◽
1999
◽
Vol 75
(8)
◽
pp. 1113-1115
◽
Cited By ~ 7
Author(s):
T. Sakamoto
◽
H. Kawaura
◽
T. Baba
◽
T. Iizuka
Keyword(s):
Metal Oxide
◽
Energy Distribution
◽
Electron Energy
◽
Direct Observation
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Hot Electron
◽
Electron Energy Distribution
Download Full-text
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