Direct observation of the hysteretic Fermi level modulation in monolayer MoS2 field effect transistors

2020 ◽  
Vol 20 (2) ◽  
pp. 298-303
Author(s):  
Yuhang Wang ◽  
Dongyong Li ◽  
Xubo Lai ◽  
Boyang Liu ◽  
Yibao Chen ◽  
...  
Keyword(s):  
Fermi Level ◽  
Direct Observation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Monolayer Mos2

Benchmarking electrolyte gated monolayer MoS2 field effect transistors in aqueous environments

2021 ◽  
Author(s):  
Steffen Rühl ◽  
Max Heyl ◽  
Fabian Gärisch ◽  
Sylke Blumstengel ◽  
Giovanni Ligorio ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Monolayer Mos2 ◽  
Aqueous Environments

Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning

2022 ◽  
Author(s):  
Tien Dat Ngo ◽  
Min Sup Choi ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Won Jong Yoo
Keyword(s):  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Two Dimensional ◽  
Edge Contact ◽  
Fermi Level Pinning ◽  
P Type

A technique to form the edge contact in two-dimensional (2D) based field-effect transistors (FETs) has been intensively studied for the purpose of achieving high mobility and also recently overcoming the...

Gap state distribution and Fermi level pinning in monolayer to multilayer MoS2 field effect transistors

Nanoscale ◽  
2020 ◽  
Vol 12 (16) ◽  
pp. 8883-8889 ◽  
Author(s):  
Ronen Dagan ◽  
Yonatan Vaknin ◽  
Yossi Rosenwaks
Keyword(s):  
Transition Metal ◽  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Surface ◽  
Volume Ratio ◽  
Transition Metal Dichalcogenide ◽  
State Distribution ◽  
Fermi Level Pinning ◽  
Gap States

Gap states and Fermi level pinning play an important role in all semiconductor devices, but even more in transition metal dichalcogenide-based devices due to their high surface to volume ratio and the absence of intralayer dangling bonds.

Direct observation of single-charge-detection capability of nanowire field-effect transistors

2010 ◽  
Vol 5 (10) ◽  
pp. 737-741 ◽  
Author(s):  
J. Salfi ◽  
I. G. Savelyev ◽  
M. Blumin ◽  
S. V. Nair ◽  
H. E. Ruda
Keyword(s):  
Direct Observation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Charge ◽  
Detection Capability ◽  
Charge Detection

Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors

2016 ◽  
Vol 108 (2) ◽  
pp. 023506 ◽  
Author(s):  
Tarun Agarwal ◽  
Bart Sorée ◽  
Iuliana Radu ◽  
Praveen Raghavan ◽  
Gianluca Fiori ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Short Channel Effects ◽  
Monolayer Mos2 ◽  
Short Channel ◽  
Inversion Mode ◽  
Mode Field ◽  
Channel Effects ◽  
And Inversion
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