scholarly journals Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS2

2018 ◽  
Vol 9 (1) ◽  
Author(s):  
Byoung Hee Moon ◽  
Jung Jun Bae ◽  
Min-Kyu Joo ◽  
Homin Choi ◽  
Gang Hee Han ◽  
...  
Keyword(s):  
Quantum Criticality ◽  
Metal Insulator ◽  
Coulomb Gap

Coulomb Gap and Metal–Insulator–Semiconductor (MIS) Transition in ZnO/n-Ag/ZnO Film in the Plasmonic Domain

Plasmonics ◽  
2015 ◽  
Vol 10 (6) ◽  
pp. 1291-1300 ◽  
Author(s):  
R. Bhunia ◽  
N. Bhadra ◽  
S. Das ◽  
S. Hussain ◽  
B. R. Chakraborty ◽  
...  
Keyword(s):  
Zno Film ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Coulomb Gap

QUANTUM PERCOLATION AND CHARGE TRANSPORT IN HIGH Tc SUPERCONDUCTORS

2000 ◽  
Vol 14 (25n27) ◽  
pp. 3012-3019
Author(s):  
V. DALLACASA ◽  
P. DI SIA
Keyword(s):  
Charge Transport ◽  
Transport Properties ◽  
Interpolation Formula ◽  
Percolation Model ◽  
High Tc Superconductors ◽  
Metal Insulator ◽  
High Tc ◽  
Coulomb Gap ◽  
Quantum Percolation ◽  
Localised States

We have investigated the consequences of internal fields on transport properties in insulators close to a metal-insulator-superconductor transition. An interpolation formula for the resistivity as a function of temperature describing insulating, metallic and superconducting regimes has been deduced in the framework of a quantum percolation model in which hopping processes on localised states occur. The contribution to the internal fields on carriers has been taken into account up to quadrupole terms. The resistivity follows a law ρ ∪(T0)δ T e(T0/T)1/2 where T0 corresponds to a coulomb gap and exhibits anisotropic quadrupole angular dependence, suggesting a correlation with the pseudo-gap observed in superconductors in the underdoped regime.

scholarly journals Coulomb gap in a doped semiconductor near the metal-insulator transition: Tunneling experiment and scaling ansatz

1999 ◽  
Vol 60 (3) ◽  
pp. 1582-1591 ◽  
Author(s):  
Mark Lee ◽  
J. G. Massey ◽  
V. L. Nguyen ◽  
B. I. Shklovskii
Keyword(s):  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Coulomb Gap

ANOMALOUS CROSSOVER FROM EFROS–SHKLOVSKII TO MOTT VARIABLE RANGE HOPPING IN SILICON MOSFETs

2013 ◽  
Vol 27 (21) ◽  
pp. 1350146 ◽  
Author(s):  
L. LIMOUNY ◽  
A. EL KAAOUACHI ◽  
S. DLIMI ◽  
A. SYBOUS ◽  
A. NARJIS ◽  
...  
Keyword(s):  
Electron System ◽  
Zero Magnetic Field ◽  
Variable Range Hopping ◽  
Dimensional Electron ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Exponential Factor ◽  
Coulomb Gap ◽  
Variable Range ◽  
Dimensional Electron System

In this paper, we investigate the temperature dependence of the electrical resistivity of a two-dimensional electron system in n-channel Si -MOSFETs at zero magnetic field down to 0.2 K. At low electron densities, near the metal–insulator transition point from the insulating side, our results show the existence of a crossover, from Efros–Shklovskii variable range hopping (ES-VRH), which is consistent with the existence of a Coulomb gap, where ρ = ρ0 exp (T ES /T)1/2 to Mott regime, where ρ = ρ0 exp (T M /T)1/3. With ρ0 is a pre-exponential factor that is found to be close to 2 (h/e2), this crossover occurs when T ~ 1 K .

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