scholarly journals Ultrafast non-excitonic valley Hall effect in MoS2/WTe2 heterobilayers

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Jekwan Lee ◽  
Wonhyeok Heo ◽  
Myungjun Cha ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
...  

AbstractThe valley Hall effect (VHE) in two-dimensional (2D) van der Waals (vdW) crystals is a promising approach to study the valley pseudospin. Most experiments so far have used bound electron-hole pairs (excitons) through local photoexcitation. However, the valley depolarization of such excitons is fast, so that several challenges remain to be resolved. We address this issue by exploiting a unipolar VHE using a heterobilayer made of monolayer MoS2/WTe2 to exhibit a long valley-polarized lifetime due to the absence of electron-hole exchange interaction. The unipolar VHE is manifested by reduced photoluminescence at the MoS2 A exciton energy. Furthermore, we provide quantitative information on the time-dependent valley Hall dynamics by performing the spatially-resolved ultrafast Kerr-rotation microscopy; we find that the valley-polarized electrons persist for more than 4 nanoseconds and the valley Hall mobility exceeds 4.49 × 103 cm2/Vs, which is orders of magnitude larger than previous reports.

2018 ◽  
Vol 60 (8) ◽  
pp. 1495 ◽  
Author(s):  
J. Heckotter ◽  
M. Freitag ◽  
D. Frohlich ◽  
M. Abmann ◽  
M. Bayer ◽  
...  

AbstractWe show that the dissociation threshold of an exciton, a bound electron-hole pair, by an electric field is mainly determined by its energy: as expected, the dissociation voltage decreases with increasing exciton energy. However, within the multiplet of states belonging to a particular principal quantum number n , the dissociation voltage rises with increasing state energy, in contrast to the expectations based on energy arguments. This behavior is demonstrated for the yellow exciton states of Cu_2O and is attributed to the distribution of the wavefunction in the potential landscape, where the lower (higher) lying state in the multiplet is shifted away (towards) the tunnel barrier.


2016 ◽  
Vol 93 (23) ◽  
Author(s):  
F. Munoz ◽  
H. P. Ojeda Collado ◽  
Gonzalo Usaj ◽  
Jorge O. Sofo ◽  
C. A. Balseiro

Nano Letters ◽  
2017 ◽  
Vol 17 (9) ◽  
pp. 5719-5725 ◽  
Author(s):  
Nicolas Ubrig ◽  
Sanghyun Jo ◽  
Marc Philippi ◽  
Davide Costanzo ◽  
Helmuth Berger ◽  
...  

Nano Letters ◽  
2019 ◽  
Vol 19 (2) ◽  
pp. 770-774 ◽  
Author(s):  
Elyse Barré ◽  
Jean Anne C. Incorvia ◽  
Suk Hyun Kim ◽  
Connor J. McClellan ◽  
Eric Pop ◽  
...  

2020 ◽  
Vol 368 ◽  
pp. 107142 ◽  
Author(s):  
A. Drouot ◽  
M.I. Weinstein

Nanoscale ◽  
2019 ◽  
Vol 11 (28) ◽  
pp. 13567-13575 ◽  
Author(s):  
Baozeng Zhou ◽  
Zheng Li ◽  
Jiaming Wang ◽  
Xuechen Niu ◽  
Chongbiao Luan

Schematic of the WS2/MnO2 heterostructure for valleytronic devices and the diagram of the anomalous valley Hall effect.


2017 ◽  
Vol 121 (20) ◽  
pp. 205106 ◽  
Author(s):  
Hairui Bao ◽  
Wenhu Liao ◽  
Xincheng Zhang ◽  
Hong Yang ◽  
Xuexian Yang ◽  
...  

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