scholarly journals Quantum anomalous Hall effect in two-dimensional magnetic insulator heterojunctions

2020 ◽  
Vol 6 (1) ◽  
Author(s):  
Jinbo Pan ◽  
Jiabin Yu ◽  
Yan-Fang Zhang ◽  
Shixuan Du ◽  
Anderson Janotti ◽  
...  

Abstract Recent years have witnessed tremendous success in the discovery of topological states of matter. Particularly, sophisticated theoretical methods in time-reversal-invariant topological phases have been developed, leading to the comprehensive search of crystal database and the prediction of thousands of topological materials. In contrast, the discovery of magnetic topological phases that break time reversal is still limited to several exemplary materials because the coexistence of magnetism and topological electronic band structure is rare in a single compound. To overcome this challenge, we propose an alternative approach to realize the quantum anomalous Hall (QAH) effect, a typical example of magnetic topological phase, via engineering two-dimensional (2D) magnetic van der Waals heterojunctions. Instead of a single magnetic topological material, we search for the combinations of two 2D (typically trivial) magnetic insulator compounds with specific band alignment so that they can together form a type-III broken-gap heterojunction with topologically non-trivial band structure. By combining the data-driven materials search, first-principles calculations, and the symmetry-based analytical models, we identify eight type-III broken-gap heterojunctions consisting of 2D ferromagnetic insulators in the MXY compound family as a set of candidates for the QAH effect. In particular, we directly calculate the topological invariant (Chern number) and chiral edge states in the MnNF/MnNCl heterojunction with ferromagnetic stacking. This work illustrates how data-driven material science can be combined with symmetry-based physical principles to guide the search for heterojunction-based quantum materials hosting the QAH effect and other exotic quantum states in general.

Nanoscale ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 175-184
Author(s):  
Liudmila L. Larina ◽  
Oleksii Omelianovych ◽  
Van-Duong Dao ◽  
Kyunglim Pyo ◽  
Dongil Lee ◽  
...  

XPS study of the electronic structure of the Au22(SG)18 clusters and their interface with TiO2 reveals that tailoring of the electronic band structure at the interface can be exploited to increase the efficiency of metal-cluster-sensitized solar cells.


Nano Letters ◽  
2018 ◽  
Vol 18 (6) ◽  
pp. 3844-3849 ◽  
Author(s):  
Peiheng Jiang ◽  
Lei Li ◽  
Zhaoliang Liao ◽  
Y. X. Zhao ◽  
Zhicheng Zhong

Nanomaterials ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 82 ◽  
Author(s):  
David K. Sang ◽  
Huide Wang ◽  
Meng Qiu ◽  
Rui Cao ◽  
Zhinan Guo ◽  
...  

Density functional theory calculations of the layer (L)-dependent electronic band structure, work function and optical properties of β-InSe have been reported. Owing to the quantum size effects (QSEs) in β-InSe, the band structures exhibit direct-to-indirect transitions from bulk β-InSe to few-layer β-InSe. The work functions decrease monotonically from 5.22 eV (1 L) to 5.0 eV (6 L) and then remain constant at 4.99 eV for 7 L and 8 L and drop down to 4.77 eV (bulk β-InSe). For optical properties, the imaginary part of the dielectric function has a strong dependence on the thickness variation. Layer control in two-dimensional layered materials provides an effective strategy to modulate the layer-dependent properties which have potential applications in the next-generation high performance electronic and optoelectronic devices.


2011 ◽  
Vol 83 (23) ◽  
Author(s):  
P. Höpfner ◽  
J. Schäfer ◽  
A. Fleszar ◽  
S. Meyer ◽  
C. Blumenstein ◽  
...  

2016 ◽  
Vol 4 (46) ◽  
pp. 17981-17987 ◽  
Author(s):  
Xin Zheng ◽  
Xiaoqin Yan ◽  
Yihui Sun ◽  
Yong Li ◽  
Minghua Li ◽  
...  

An adaptive interface electronic band structure was designed for improving the capacitance by introducing a TiO2 embedding layer at the ZnO/Ni(OH)2 interface.


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