Stoichiometry, band alignment, and electronic structure of Eu2O3 thin films studied by direct and inverse photoemission: A reevaluation of the electronic band structure

2020 ◽  
Vol 127 (7) ◽  
pp. 074101 ◽  
Author(s):  
Tobias Hadamek ◽  
Sylvie Rangan ◽  
Jonathan Viereck ◽  
Donghan Shin ◽  
Agham B. Posadas ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Band Structure ◽  
Electronic Band Structure ◽  
Band Alignment ◽  
Electronic Band ◽  
Inverse Photoemission

Energy band alignment at the heterointerface between a nanostructured TiO2 layer and Au22(SG)18 clusters: relevance to metal-cluster-sensitized solar cells

Nanoscale ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 175-184
Author(s):  
Liudmila L. Larina ◽  
Oleksii Omelianovych ◽  
Van-Duong Dao ◽  
Kyunglim Pyo ◽  
Dongil Lee ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Solar Cells ◽  
Band Structure ◽  
Electronic Band Structure ◽  
Metal Cluster ◽  
Band Alignment ◽  
Tio2 Layer ◽  
Electronic Band ◽  
Xps Study ◽  
Sensitized Solar Cells

XPS study of the electronic structure of the Au22(SG)18 clusters and their interface with TiO2 reveals that tailoring of the electronic band structure at the interface can be exploited to increase the efficiency of metal-cluster-sensitized solar cells.

Electronic band structure of gallium nitride: a comparative angle-resolved photoemission study of single crystals and thin films

2002 ◽  
Vol 507-510 ◽  
pp. 223-228 ◽  
Author(s):  
L. Plucinski ◽  
T. Strasser ◽  
B.J. Kowalski ◽  
K. Rossnagel ◽  
T. Boetcher ◽  
...  
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Band Structure ◽  
Single Crystals ◽  
Electronic Band Structure ◽  
Electronic Band ◽  
Photoemission Study

Critical role of {002} preferred orientation on electronic band structure of electrodeposited monoclinic WO3 thin films

2018 ◽  
Vol 2 (10) ◽  
pp. 2224-2236 ◽  
Author(s):  
Wai Ling Kwong ◽  
Pramod Koshy ◽  
Judy N. Hart ◽  
Wanqiang Xu ◽  
Charles C. Sorrell
Keyword(s):  
Thin Films ◽  
Band Structure ◽  
Oxygen Vacancies ◽  
Electronic Band Structure ◽  
Critical Role ◽  
Preferred Orientation ◽  
Electronic Band ◽  
Wo3 Thin Films

Decoupled effects of crystallographic {002} orientation and oxygen vacancies on the electronic band structure of monoclinic WO3 films.

Computational Analysis of Strain Effects on Electrical Transport Properties of Crystalline Nanocomposite Thin Films

2011 ◽  
Author(s):  
Hua Li ◽  
Gang Li
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Band Structure ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electronic Band Structure ◽  
Electrical Transport Properties ◽  
Electronic Band ◽  
Strain Effects ◽  
Nanocomposite Thin Films

In this work, we model the strain effects on the electrical transport properties of Si/Ge nanocomposite thin films. We utilize a two-band k·p theory to calculate the variation of the electronic band structure as a function of externally applied strains. By using the modified electronic band structure, electrical conductivity of the Si/Ge nanocomposites is calculated through a self-consistent electron transport analysis, where a nonequilibrium Green’s function (NEGF) is coupled with the Poisson equation. The results show that both the tensile uniaxial and biaxial strains increase the electrical conductivity of Si/Ge nanocomposite. The effects are more evident in the biaxial strain cases.

Influence of the Cation on the Surface Electronic Band Structure and Magnetic Properties of Mn:ZnS and Mn:CdS Quantum Dot Thin Films

2019 ◽  
Vol 123 (40) ◽  
pp. 24890-24898 ◽  
Author(s):  
Andrew J. Yost ◽  
Thilini K. Ekanayaka ◽  
Gautam Gurung ◽  
Gaurab Rimal ◽  
Sabit Horoz ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Quantum Dot ◽  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band

Microstructure, optical property, and electronic band structure of cuprous oxide thin films

2011 ◽  
Vol 110 (10) ◽  
pp. 103503 ◽  
Author(s):  
Jun-Woo Park ◽  
Hyungkeun Jang ◽  
Sung Kim ◽  
Suk-Ho Choi ◽  
Hosun Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Property ◽  
Band Structure ◽  
Cuprous Oxide ◽  
Electronic Band Structure ◽  
Oxide Thin Films ◽  
Electronic Band

scholarly journals Dielectric functions and electronic band structure of lead zirconate titanate thin films

2005 ◽  
Vol 98 (9) ◽  
pp. 094108 ◽  
Author(s):  
Hosun Lee ◽  
Youn Seon Kang ◽  
Sang-Jun Cho ◽  
Bo Xiao ◽  
Hadis Morkoç ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Structure ◽  
Lead Zirconate Titanate ◽  
Electronic Band Structure ◽  
Lead Zirconate ◽  
Electronic Band ◽  
Zirconate Titanate

Crystal order in pentacene thin films grown on SiO2 and its influence on electronic band structure

2011 ◽  
Vol 12 (1) ◽  
pp. 195-201 ◽  
Author(s):  
R. Matsubara ◽  
M. Sakai ◽  
K. Kudo ◽  
N. Yoshimoto ◽  
I. Hirosawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band

scholarly journals Electronic Structure of the Rare-Earth Nitrides

2021 ◽  
Author(s):  
◽  
A. R. H. Preston
Keyword(s):  
Electronic Structure ◽  
Rare Earth ◽  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band ◽  
X Ray ◽  
Rare Earth Nitrides ◽  
Wide Range ◽  
X Ray Absorption ◽  
The Rare Earth

<p>The rare-earth nitrides (ReNs) are a class of novel materials with potential for use in spintronics applications. Theoretical studies indicate that among the ReNs there could be half-metals, semimetals and semiconductors, all exhibiting strong magnetic ordering. This is because of the complex interaction between the partially filled rare-earth 4f orbital and the nitrogen 2p valence and rare-earth 5d conduction bands. This thesis uses experimental and theoretical techniques to probe the ReN electronic structure. Thin films of SmN, EuN, GdN, DyN, LuN and HfN have been produced for study. Basic characterization shows that the films are of a high quality. The result of electrical transport, magnetometry, and optical and x-ray spectroscopy are interpreted to provide information on the electronic structure. SmN, GdN, DyN are found to be semiconductors in their ferromagnetic ground state while HfN is a metal. Results are compared with density functional theory (DFT) based calculations. The free parameters resulting from use of the local spin density approximation with Hubbard-U corrections as the exchange-correlation functional are adjusted to reach good agreement with x-ray absorption and emission spectroscopy at the nitrogen K-edge. Resonant x-ray emission is used to experimentally measure valence band dispersion of GdN. No evidence of the rare-earth 4f levels is found in any of the K-edge spectroscopy, which is consistent with the result of M-edge x-ray absorption which show that the 4f wave function of the rare-earths in the ReNs are very similar to those of rare-earth metal. An auxillary resonant x-ray emission study of ZnO is used to map the dispersion of the electronic band structure across a wide range of the Brillouin zone. The data, and calculations based on GW corrections to DFT, together provide a detailed picture of the bulk electronic band structure.</p>

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