scholarly journals Optical and surface energy probe of Hamaker constant in copper oxide thin films for NEMS and MEMS stiction control applications

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Abraham Ogwu ◽  
T. H. Darma

AbstractCopper oxide films hold substantial promise as anti-stiction coatings in micro-electromechanical (MEMS) devices and with shrinking dimensions on the nanometre scale on nano electromechanical (NEMS) devices. The Hamaker constant will play a very significant role in understanding stiction and tribology in these devices. We used an approximate but sufficiently accurate form of the Lifshitz theory using the multiple oscillator model to calculate the Hamakers constant of symmetric copper oxide thin films based on experimentally obtained dielectric data in the wavelength range 190-850 nm using spectroscopic ellipsometry. We also used the Tabor–Winterton approximation (TWA) and Surface energy measurements to determine the Hamaker constant. There was better agreement in the Hamaker constant values obtained by the limited Lifshitz theory and TWA approach than with the Surface energy approach. The difference is explained through the influence of surface roughness on the surface energy using extensions of the stochastic KPZ growth model and the Family-Vicsek scaling relation and rigorous treatment of the Cassie-Baxter and Wenzel models as optimisations of a surface free energy functional linking roughness and surface tension. The dominance of the Cu2O phase in the films and of the London dispersion force on the surface of the films was previously confirmed by FTIR Cu(I)–O vibrational mode observation and XPS Cu 2p3/2 binding energy peak and its fitted satellites. The use of the limited Lifshitz theory and ellipsometry data would seem to provide a suitable best first approximation for determining the Hamaker constant of predominantly dispersive anti-stiction coatings in technologically important MEMS/NEMS devices.

Author(s):  
I. A. Rauf

To understand the electronic conduction mechanism in Sn-doped indium oxide thin films, it is important to study the effect of dopant atoms on the neighbouring indium oxide lattice. Ideally Sn is a substitutional dopant at random indium sites. The difference in valence (Sn4+ replaces In3+) requires that an extra electron is donated to the lattice and thus contributes to the free carrier density. But since Sn is an adjacent member of the same row in the periodic table, the difference in the ionic radius (In3+: 0.218 nm; Sn4+: 0.205 nm) will introduce a strain in the indium oxide lattice. Free carrier electron waves will no longer see a perfect periodic lattice and will be scattered, resulting in the reduction of free carrier mobility, which will lower the electrical conductivity (an undesirable effect in most applications).One of the main objectives of the present investigation is to understand the effects of the strain (produced by difference in the ionic radius) on the microstructure of the indium oxide lattice when the doping level is increased to give high carrier densities. Sn-doped indium oxide thin films were prepared with four different concentrations: 9, 10, 11 and 12 mol. % of SnO2 in the starting material. All the samples were prepared at an oxygen partial pressure of 0.067 Pa and a substrate temperature of 250°C using an Edwards 306 coating unit with an electron gun attachment for heating the crucible. These deposition conditions have been found to give optimum electrical properties in Sn-doped indium oxide films. A JEOL 2000EX transmission electron microscope was used to investigate the specimen microstructure.


2021 ◽  
Vol 1070 (1) ◽  
pp. 012011
Author(s):  
Shifa Salam ◽  
Ben Jose ◽  
Rakhy Raphael ◽  
E I Anila

2005 ◽  
Vol 20 (5) ◽  
pp. 398-401 ◽  
Author(s):  
Necmi Serin ◽  
Tülay Serin ◽  
Şeyda Horzum ◽  
Yasemin Çelik

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