Healing of donor defect states in monolayer molybdenum disulfide using oxygen-incorporated chemical vapour deposition

2021 ◽  
Author(s):  
Pin-Chun Shen ◽  
Yuxuan Lin ◽  
Cong Su ◽  
Christina McGahan ◽  
Ang-Yu Lu ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Defect States ◽  
Donor Defect

scholarly journals Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation

Nanoscale ◽  
2018 ◽  
Vol 10 (37) ◽  
pp. 17557-17566 ◽  
Author(s):  
HyunJeong Kim ◽  
WungYeon Kim ◽  
Maria O'Brien ◽  
Niall McEvoy ◽  
Chanyoung Yim ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Chemical Vapour Deposition ◽  
Field Effect ◽  
Vapour Deposition ◽  
Field Effect Transistors ◽  
Chemical Vapour ◽  
High Mobility ◽  
Single Layer

High mobility, fully encapsulated field-effect transistors with non-covalently functionalised molybdenum disulfide (MoS2) channels grown by chemical vapour deposition are reported.

scholarly journals Chemical vapour deposition of rhenium disulfide and rhenium-doped molybdenum disulfide thin films using single-source precursors

2016 ◽  
Vol 4 (12) ◽  
pp. 2312-2318 ◽  
Author(s):  
Naktal Al-Dulaimi ◽  
David J. Lewis ◽  
Xiang Li Zhong ◽  
M. Azad Malik ◽  
Paul O'Brien
Keyword(s):  
Thin Films ◽  
Molybdenum Disulfide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors ◽  
Polycrystalline Thin Films

Polycrystalline thin films of rhenium disulfide (ReS2) and the alloys Mo1−xRexS2 (0 ≤ x ≤ 0.06) have been deposited by aerosol-assisted chemical vapour deposition (AA-CVD) using [Re(μ-SiPr)3(SiPr)6] and [Mo(S2CNEt2)4] at 475 °C.

Synthesis of Nanostructured Molybdenum Disulfide by Chemical Vapour Deposition

2017 ◽  
Vol 4 (10) ◽  
pp. 11134-11140 ◽  
Author(s):  
Keyur N. Solanki ◽  
Rahul M. Cadambi ◽  
S. Srikari ◽  
S.R. Shankapal
Keyword(s):  
Molybdenum Disulfide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour

Low-pressure chemical vapour deposition of mullite coatings in a cold-wall reactor

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-395-Pr8-402 ◽  
Author(s):  
B. Armas ◽  
M. de Icaza Herrera ◽  
C. Combescure ◽  
F. Sibieude ◽  
D. Thenegal
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Cold Wall ◽  
Pressure Chemical ◽  
Mullite Coatings

Thermodynamical and experimental conditions of hafnium carbide chemical vapour deposition

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-373-Pr8-380 ◽  
Author(s):  
P. Sourdiaucourt ◽  
A. Derré ◽  
P. Delhaès ◽  
P. David
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hafnium Carbide ◽  
Experimental Conditions

Reduction of carbon impurities in aluminium nitride from time-resolved chemical vapour deposition using trimethylaluminum

2020 ◽  
Author(s):  
Polla Rouf ◽  
Pitsiri Sukkaew ◽  
Lars Ojamäe ◽  
Henrik Pedersen
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Aluminium Nitride ◽  
Methyl Groups ◽  
Time Resolved ◽  
Thermally Induced ◽  
Light Emitting ◽  
Carbon Impurities ◽  
Wide Range

<p>Aluminium nitride (AlN) is a semiconductor with a wide range of applications from light emitting diodes to high frequency transistors. Electronic grade AlN is routinely deposited at 1000 °C by chemical vapour deposition (CVD) using trimethylaluminium (TMA) and NH<sub>3</sub> while low temperature CVD routes to high quality AlN are scarce and suffer from high levels of carbon impurities in the film. We report on an ALD-like CVD approach with time-resolved precursor supply where thermally induced desorption of methyl groups from the AlN surface is enhanced by the addition of an extra pulse, H<sub>2</sub>, N<sub>2</sub> or Ar between the TMA and NH<sub>3</sub> pulses. The enhanced desorption allowed deposition of AlN films with carbon content of 1 at. % at 480 °C. Kinetic- and quantum chemical modelling suggest that the extra pulse between TMA and NH<sub>3</sub> prevents re-adsorption of desorbing methyl groups terminating the AlN surface after the TMA pulse. </p>

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