High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon

2021 ◽  
Vol 4 (12) ◽  
pp. 914-920
Author(s):  
Mamidala Saketh Ram ◽  
Karl-Magnus Persson ◽  
Austin Irish ◽  
Adam Jönsson ◽  
Rainer Timm ◽  
...  
2021 ◽  
Author(s):  
Yan-Lei Lu ◽  
Wen-Long Lan ◽  
Wei Shi ◽  
Qionghua Jin ◽  
Peng Cheng

Photo-induced variation of magnetism from ligand-based electron transfer have been extensively studied because of their potential applications in magneto-optical memory devices, light-responsive switches, and high-density information storage materials. In this...


2001 ◽  
Vol 119 (3) ◽  
pp. 117-119 ◽  
Author(s):  
K Franke ◽  
G Martin ◽  
M Weihnacht ◽  
A.V Sotnikov

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Hee Young Kwon ◽  
Kyung Mee Song ◽  
Juyoung Jeong ◽  
Ah-Yeon Lee ◽  
Seung-Young Park ◽  
...  

AbstractThe discovery of a thermally stable, high-density magnetic skyrmion phase is a key prerequisite for realizing practical skyrmionic memory devices. In contrast to the typical low-density Néel-type skyrmions observed in technologically viable multilayer systems, with Lorentz transmission electron microscopy, we report the discovery of a high-density homochiral Néel-type skyrmion phase in magnetic multilayer structures that is stable at high temperatures up to 733 K (≈460 °C). Micromagnetic simulations reveal that a high-density skyrmion phase can be stabilized at high temperature by deliberately tuning the magnetic anisotropy, magnetic field, and temperature. The existence of the high-density skyrmion phase in a magnetic multilayer system raises the possibility of incorporating chiral Néel-type skyrmions in ultrahigh-density spin memory devices. Moreover, the existence of this phase at high temperature shows its thermal stability, demonstrating the potential for skyrmion devices operating in thermally challenging modern electronic chips.


Author(s):  
Yong Soo Kim ◽  
Kwan-Yong Lim ◽  
Min-Gyu Sung ◽  
Soo-Hyun Kim ◽  
Hong-Seon Yang ◽  
...  

1979 ◽  
Vol 14 (2) ◽  
pp. 486-497 ◽  
Author(s):  
P.K. Chatterjee ◽  
G.W. Taylor ◽  
A.F. Tasch

1996 ◽  
Vol 431 ◽  
Author(s):  
A. D. Berry ◽  
R. J. Tonucci ◽  
P. P. Nguyen

AbstractIndium arsenide wires have been fabricated in a glass host consisting of a high density array of uniformly shaped channels in a matrix glass. Reactions between organoindium compounds and arsine have produced polycrystalline InAs with crystallite sizes of approximately 10 nanometers when annealed at 400°C. At higher annealing temperatures, the wires exhibit an increase in surface porosity and grain size.


2002 ◽  
Vol 61-62 ◽  
pp. 577-583 ◽  
Author(s):  
Zheng Cui ◽  
J. Rothman ◽  
M. Klaui ◽  
L. Lopez-Diaz ◽  
C.A.F. Vaz ◽  
...  

2010 ◽  
Vol 87 (11) ◽  
pp. 2081-2084 ◽  
Author(s):  
Sung-Hoon Hong ◽  
Byeong-Ju Bae ◽  
Heon Lee ◽  
Jun-Ho Jeong

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