Novel Devices for the Shop and the Home

1926 ◽  
Vol 134 (3) ◽  
pp. 182-184
Author(s):  
Albert A. Hopkins
Keyword(s):  
Novel Devices

Element Edge Based Discretization for TCAD Device Simulation

2021 ◽  
Author(s):  
Juan Sanchez ◽  
Qiusong Chen
Keyword(s):  
Computer Aided Design ◽  
Field Effect Transistor ◽  
Semiconductor Device ◽  
Device Simulation ◽  
Polarization Effects ◽  
Effect Transistor ◽  
Edge Based ◽  
Volume Method ◽  
Aided Design ◽  
Novel Devices

<div><div><div><p>Technology computer-aided design (TCAD) semiconductor device simulators solve partial differential equations (PDE) using the finite volume method (FVM), or related methods. While this approach has been in use over several decades, its methods continue to be extended, and are still applicable for investigating novel devices. In this paper, we present an element edge based (EEB) FVM discretization approach suitable for capturing vector-field effects. Drawing from a 2D approach in the literature, we have extended this method to 3D. We implemented this method in a TCAD semiconductor device simulator, which uses a generalized PDE (GPDE) approach to simulate de- vices with the FVM. We describe how our EEB method is compatible with the GPDE approach, allowing the modeling of vector effects using scripting. This method is applied to solve polarization effects in a 3D ferro capacitor, and a 2D ferroelectric field-effect transistor. An example for field- dependent mobility in a 3D MOSFET is also presented.</p></div></div></div>

Technical Nanospintronics Analysis of the Performance Optimization of Devices Based on Carbonaceous Materials

2021 ◽  
Vol 1045 ◽  
pp. 1-8
Author(s):  
Kamal Nain Chopra
Keyword(s):  
Performance Optimization ◽  
Mathematical Formulation ◽  
Technical Analysis ◽  
Carbonaceous Materials ◽  
Exciting Field ◽  
Qualitative Review ◽  
New Entrants ◽  
Novel Devices

Technical analysis of the performance optimization of nanospintronics devices based on carbonaceous materials has been presented in this paper. Mathematical formulation of the nanospintronics devices and a brief theory of these devices have been briefly discussed. A qualitative review of some of important nanospintronics based devices has also been given. The paper is expected to be useful to the new entrants in this exciting field, and also for the designers of some novel devices based on use of carbonaceous materials in nanospintronics.

Nanoscale Continuous Directional Motion Driven by a Cyclic Thermal Field

2021 ◽  
pp. 1-19
Author(s):  
Yichang Chen ◽  
Jiantao Leng ◽  
Zhengrong Guo ◽  
Yingyan Zhang ◽  
Tienchong Chang
Keyword(s):  
Carbon Nanotube ◽  
Thermal Gradient ◽  
Thermal Field ◽  
Joint Actions ◽  
Thermal Fields ◽  
Heating Region ◽  
Directional Motion ◽  
Gradient Forces ◽  
Controllable Motion ◽  
Novel Devices

Abstract Directional motion plays a crucial role in various mechanical systems. Although mechanisms for nanoscale directional motion have been widely used in many aspects of nanotechnology, it remains a great challenge to generate continuous and controllable motion at the nanoscale. Herein we propose a nanoscale continuous directional motion in cyclic thermal fields by using a double-walled system which consists of an outer BN/C heterojunction nanotube and a concentric inner carbon nanotube (CNT). By manipulating the heating region of the outer BN/C heterojunction tube, the continuous motion of the inner CNT can be realized with ease. The inner CNT demonstrates three distinct movements due to the joint actions of the asymmetric thermal gradient forces and interlayer attraction forces caused by the presence of the outer BN/C heterojunction nanotube. The mechanism revealed in the present study may be useful in designing novel devices for energy conversion and directional transportation.

Rational belief and Dialetheism

2021 ◽  
Vol 18 (3) ◽  
pp. 309-335
Author(s):  
Paolo Bonardi
Keyword(s):  
Rational Belief ◽  
Mode Of Presentation ◽  
Novel Devices ◽  
Graham Priest

Abstract It is usually maintained that a subject with manifestly contradictory beliefs is irrational. How can we account, then, for the intuitive rationality of dialetheists, who believe that some manifest contradictions are true? My paper aims to answer this question. Its ultimate goal is to determine a characterization of (or rather a constraint for) rational belief approvable by both the theorists of Dialetheism and its opponents. In order to achieve this goal, a two-step strategy will be adopted. First, a characterization of rational belief applicable to non-dialetheist believers will be determined; this characterization will involve the semantic apparatus of Nathan Salmon’s Millian Russellianism but will get rid of the problematic and obscure notion of mode of presentation (guise in his own terminology), replacing it with a couple of novel devices, belief subsystems and cognitive coordination. Second, using ideas from Graham Priest, the leading proponent of Dialetheism, such a characterization will be modified, so as to devise a new one able to account for the intuitive rationality of both dialetheist and non-dialetheist believers.

Quantum Modelling of Nanoscale Silicon Gate-All-Around Field Effect Transistor

2020 ◽  
Vol 64 ◽  
pp. 115-122
Author(s):  
P. Vimala ◽  
N.R. Nithin Kumar
Keyword(s):  
Analytical Model ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effect Transistor ◽  
Quantum Mechanical Effects ◽  
Novel Devices

The paper introduces an analytical model for gate all around (GAA) or Surrounding Gate Metal Oxide Semiconductor Field Effect Transistor (SG-MOSFET) inclusive of quantum mechanical effects. The classical oxide capacitance is replaced by the capacitance incorporating quantum effects by including the centroid parameter. The quantum variant of inversion charge distribution function, inversion layer capacitance, drain current, and transconductance expressions are modeled by employing this model. The established analytical model results agree with the simulated results, verifying these models' validity and providing theoretical supports for designing and applying these novel devices.

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