On the small angle twist sub-grain boundaries in Ti3AlC2

Microstructures of ulexite were investigated by CTEM and low electron dose HREM. It was found that the longitudinal grains in ulexite were oriented to c-direction to form a bundle structure. There were a number of small-angle grain boundaries and stacking faults inside a grain in the ulexite. Cleavage microcracks and stacking faults were mostly introduced on the {010} of the ulexite. The high-angle grain boundaries mainly consisted of high coincidence boundaries, which was confirmed by a comparison of observed contact angles and calculated degree of coincidence at the boundaries. The light transmittance properties of the ulexite would depend on the defects such as stacking fault, small-angle grain boundary, and high-angle grain boundary.

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Small-angle grain boundaries in quasicrystals

Physical Review Letters ◽

10.1103/physrevlett.62.2699 ◽

1989 ◽

Vol 62 (23) ◽

pp. 2699-2702 ◽

Cited By ~ 8

Author(s):

Yashodhan Hatwalne ◽

H. R. Krishnamurthy ◽

Rahul Pandit ◽

Sriram Ramaswamy

Keyword(s):

Grain Boundaries ◽

Small Angle

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X-RAY AND SCANNING CATHODOLUMINESCENCE IMAGING OF SMALL-ANGLE GRAIN BOUNDARIES AND DISLOCATIONS IN CdTe CRYSTALS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1983437 ◽

1983 ◽

Vol 44 (C4) ◽

pp. C4-313-C4-316

Author(s):

M. Klimkiewicz ◽

J. Auleytner

Keyword(s):

Grain Boundaries ◽

Small Angle ◽

X Ray ◽

Cathodoluminescence Imaging

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Dislocation and solid-phase epitaxial growth microstructure control by Ar+ implantation for gettering in semiconductors

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100145017 ◽

1986 ◽

Vol 44 ◽

pp. 728-729

Author(s):

P. Smith ◽

J. Narayan

Keyword(s):

Grain Boundaries ◽

Small Angle ◽

Solid Phase ◽

Active Regions ◽

Dislocation Network ◽

Implantation Damage ◽

Impurity Interaction ◽

Line Defects ◽

Removal Of Impurities ◽

The Stability

Gettering of undesirable impurities from the junctions or the electrically active regions improves electrical characteristics of semiconductor devices. This removal of impurities can be accomplished either by point defects or more efficiently by line defects such as dislocations and small-angle grain boundaries. The small-angle grain boundaries containing arrays of dislocations constitute two-dimensional defects which are more effective in removing the impurities. This removal of undesirable impurities involves dislocation - impurity interaction and subsequent segregation of impurities at the dislocations. The gettering efficiency of dislocations is determined by the nature of dislocations and also by the stability of dislocation network against annealing. In previous studies, it has been shown Ar+ implantation damage is very effective in gettering undesireable impurities. However, the mechanisms of enhanced gettering by Ar+ ion damage were not clear. The purpose of this investigation was to explore the mechanism of enhanced gettering by Ar+ damage and charaterize the Ar+ damage as a function of annealing treatments.

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