scholarly journals Study on the noncoincidence effect phenomenon using matrix isolated Raman spectra and the proposed structural organization model of acetone in condense phase

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Wenwen Xu ◽  
Fengqi Wu ◽  
Yanying Zhao ◽  
Ran Zhou ◽  
Huigang Wang ◽  
...  

Abstract The isotropic and anisotropic Raman spectra of acetone and deuterated acetone isolated in an argon matrix have been recorded for the understanding of noncoincidence effect (NCE) phenomenon. According to the matrix isolated Raman spectra and DFT calculations, we proposed aggregated model for the explanations of the acetone C=O vibration NCE phenomenon and its concentration effect. The experimental data were in consistence with the DFT calculations performed at the B3LYP-D3/6-311 G (d,p) levels based on the proposed model. The experimental identification of the monomer, dimer and trimer are reported here, and the dynamic of the transformation from monomer to aggregated structure can be easily controlled by tuning annealing temperature.

1979 ◽  
Vol 33 (4) ◽  
pp. 361-364 ◽  
Author(s):  
V. F. Kalasinsky ◽  
E. Block ◽  
D. E. Powers ◽  
W. C. Harris

The infrared and Raman spectra of 1,3-dithietane have been recorded with the sample in the solid state and trapped in an argon matrix at 18K. The number of coincidences between the infrared and Raman spectra of the matrix-isolated sample is consistent with C2v molecular symmetry in which the ring has a puckered conformation. In the solid state a number of bands disappear upon annealing, and the observed mutual exclusion for the annealed solid can be interpreted in terms of D2h, symmetry. Whereas the matrix probably represents the “free” molecule, the planarity of the ring in the annealed solid can be attributed to crystal packing.


Author(s):  
N. Sundaraganesan ◽  
S. Kalaichelvan ◽  
C. Meganathan ◽  
B. Dominic Joshua ◽  
J. Cornard

1981 ◽  
Vol 7 ◽  
Author(s):  
B.S. Elman ◽  
H. Mazurek ◽  
M.S. Dresselhaus ◽  
G. Dresselhaus

ABSTRACTRaman spectroscopy is used in a variety of ways to monitor different aspects of the lattice damage caused by ion implantation into graphite. Particular attention is given to the use of Raman spectroscopy to monitor the restoration of lattice order by the annealing process, which depends critically on the annealing temperature and on the extent of the original lattice damage. At low fluences the highly disordered region is localized in the implanted region and relatively low annealing temperatures are required, compared with the implantation at high fluences where the highly disordered region extends all the way to the surface. At high fluences, annealing temperatures comparable to those required for the graphitization of carbons are necessary to fully restore lattice order.


2013 ◽  
Vol 1037 ◽  
pp. 294-300 ◽  
Author(s):  
Henning Alfred Höppe ◽  
Karolina Kazmierczak ◽  
Elida Romano ◽  
Silvia Antonia Brandán

1999 ◽  
Vol 311 (6) ◽  
pp. 479-484 ◽  
Author(s):  
Christa Kneip ◽  
Peter Hildebrandt ◽  
Károly Németh ◽  
Franz Mark ◽  
Kurt Schaffner

RSC Advances ◽  
2013 ◽  
Vol 3 (16) ◽  
pp. 5597 ◽  
Author(s):  
Maria Wächtler ◽  
Maximilian Bräutigam ◽  
Jürgen Popp ◽  
Benjamin Dietzek

2005 ◽  
Vol 480-481 ◽  
pp. 197-200
Author(s):  
Y. Sayad ◽  
A. Nouiri

An increasing of donor centres has been detected in n-InSb when it was submitted to anneal/quench with various annealing temperature (450 °C - 850 °C) and various annealing time (5 - 100 hours). A theoretical study of the kinetics of the conduction conversion of n-InSb at temperature annealing above 250 °C has been made. The present analysis indicates that the donor concentration increases with increasing of annealing time. In order to study this variation and to give a model for donor centres generated, a proposed model based on the simple kinetic is used to fit the variation of donor concentration as a function of annealing time. However, from the best fit of experimental data using the proposed model, the activation energy is determined.


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