Raman Spectra of Ion Implanted Graphite

1981 ◽  
Vol 7 ◽  
Author(s):  
B.S. Elman ◽  
H. Mazurek ◽  
M.S. Dresselhaus ◽  
G. Dresselhaus
Keyword(s):  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Raman Spectra ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Lattice Order ◽  
Annealing Temperatures ◽  
High Fluences ◽  
Lattice Damage ◽  
The Way

ABSTRACTRaman spectroscopy is used in a variety of ways to monitor different aspects of the lattice damage caused by ion implantation into graphite. Particular attention is given to the use of Raman spectroscopy to monitor the restoration of lattice order by the annealing process, which depends critically on the annealing temperature and on the extent of the original lattice damage. At low fluences the highly disordered region is localized in the implanted region and relatively low annealing temperatures are required, compared with the implantation at high fluences where the highly disordered region extends all the way to the surface. At high fluences, annealing temperatures comparable to those required for the graphitization of carbons are necessary to fully restore lattice order.

Structural Changes of UHV Deposited Titanium Thin Films in Presence of Oxygen Flow and Temperature

2011 ◽  
Vol 110-116 ◽  
pp. 1094-1098
Author(s):  
Haleh Kangarlou ◽  
Mehdi Bahrami Gharahasanloo ◽  
Akbar Abdi Saray ◽  
Reza Mohammadi Gharabagh
Keyword(s):  
Room Temperature ◽  
Structural Changes ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Oxygen Flow ◽  
Glass Substrates ◽  
Annealing Temperatures ◽  
Titanium Thin Films ◽  
Deposition Angle ◽  
Ti Films

Ti films of same thickness, and near normal deposition angle, and same deposition rate were deposited on glass substrates, at room temperature, under UHV conditions. Different annealing temperatures as 393K, 493K and 593K with uniform 8 cm3/sec, oxygen flow, were used for producing titanium oxide layers. Their nanostructures were determined by AFM and XRD methods. Roughness of the films changed due to annealing process. The gettering property of Ti and annealing temperature can play an important role in the nanostructure of the films.

Optical Waveguide Formation by Ion Implantation of Ti or Ag

1988 ◽  
Vol 100 ◽  
Author(s):  
D. B. Poker ◽  
D. K. Thomas
Keyword(s):  
Ion Implantation ◽  
Concentration Profile ◽  
Optical Waveguides ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Effective Means ◽  
Complete Removal ◽  
Solid Phase Epitaxy ◽  
Annealing Temperatures ◽  
Residual Damage

ABSTRACTIon implantation of Ti into LINbO3 has been shown to be an effective means of producing optical waveguides, while maintaining better control over the resulting concentration profile of the dopant than can be achieved by in-diffusion. While undoped, amorphous LiNbO3 can be regrown by solid-phase epitaxy at 400°C with a regrowth velocity of 250 Å/min, the higher concentrations of Ti required to form a waveguide (∼10%) slow the regrowth considerably, so that temperatures approaching 800°C are used. Complete removal of residual damage requires annealing temperatures of 1000°C, not significantly lower than those used with in-diffusion. Solid phase epitaxy of Agimplanted LiNbO3, however, occurs at much lower temperatures. The regrowth is completed at 400°C, and annealing of all residual damage occurs at or below 800°C. Furthermore, the regrowth rate is independent of Ag concentration up to the highest dose implanted to date, 1 × 1017 Ag/cm2. The usefulness of Ag implantation for the formation of optical waveguides is limited, however, by the higher mobility of Ag at the annealing temperature, compared to Ti.

scholarly journals Thermal Stability, Hardness, and Corrosion Behavior of the Nickel–Ruthenium–Phosphorus Sputtering Coatings

Coatings ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 786
Author(s):  
Yu-Cheng Hsiao ◽  
Fan-Bean Wu
Keyword(s):  
Pitting Corrosion ◽  
Annealing Temperature ◽  
Surface Hardness ◽  
Input Power ◽  
Annealing Process ◽  
Nacl Solution ◽  
Annealing Temperatures ◽  
Heat Treated ◽  
Composition Variation ◽  
Heat Treated Temperature

Nickel–ruthenium–phosphorus, Ni–Ru–P, alloy coatings were fabricated by magnetron dual-gun co-sputtering from Ni–P alloy and Ru source targets. The composition variation and related microstructure evolution of the coatings were manipulated by the input power modulation. The as-prepared Ni–Ru–P alloy coatings with a Ru content less than 12.2 at.% are amorphous/nanocrystalline, while that with a high Ru content of 52.7 at.% shows a feature of crystallized Ni, Ru, and Ru2P mixed phases in the as-deposited state. The crystallized phases for high Ru content Ni–Ru–P coatings are stable against annealing process up to 600 °C. By contrast, the amorphous/nanocrystalline Ni–Ru–P thin films withstand a heat-treated temperature up to 475 °C and then transform into Ni(Ru) and NixPy crystallized phases at an annealing temperature over 500 °C. The surface hardness of the Ni–Ru–P films ranges from 7.2 to 12.1 GPa and increases with the Ru content and the annealing temperatures. A highest surface hardness is found for the 550 °C annealed Ni–Ru–P with a high Ru content of 52.7 at.%. The Ecorr values of the heat-treated amorphous/nanocrystalline Ni–Ru–P coatings become more negative, while with a high Ru content over 27.3 at.% the Ni–Ru–P films show more negative Ecorr values after annealing process. The pitting corrosion feature is observed for the amorphous/nanocrystalline Ni–Ru–P coatings when tested in a 3.5M NaCl solution. Severer pitting corrosion is found for the 550 °C annealed Ni–Ru–P coatings. The development of Ni(Ru) and NixPy crystallized phases during annealing is responsible for the degeneration of corrosion resistance.

Effect of Annealing Temperature on Microstructure and Properties of Cold Drawn Tube

2021 ◽  
Vol 871 ◽  
pp. 87-91
Author(s):  
Cai Tang ◽  
Jun Wen ◽  
Hui Ji Fan
Keyword(s):  
Annealing Temperature ◽  
Great Influence ◽  
Fracture Morphology ◽  
Annealing Process ◽  
Tensile Fracture ◽  
Annealing Temperatures ◽  
Microstructure Observation ◽  
Electron Microscopy Analysis ◽  
Microscopy Analysis ◽  
Strength And Plasticity

The annealing process of an improved Q420 cold drawn tube was studied by using different annealing temperatures (430°C, 450°C, 470°C, 490°C and 510°C) with a same annealing holding time (3h). The effect of different annealing temperatures on the mechanical properties, microstructure and fracture features of the cold drawn tube was studied by means of tensile test, microstructure observation and scanning electron microscopy analysis. The results show that, annealing temperature has great influence on the strength and plasticity of the cold drawn tube. When the annealing temperature increased to 450°C, banded microstructure was mitigated and the pearlite is relatively dispersed. The tensile fracture morphology under the annealing temperature of 450°C has more dimples and deeper bremsstrahlung than other annealing temperatures. The best annealing process of the cold drawn tube was 450°C×3h. Under this annealing process, the cold drawn tube with good strength and toughness can be obtained.

The Recrystallization Properties of Poly-GexSi1-xON SiO2/Si

1997 ◽  
Vol 472 ◽  
Author(s):  
N. Jiang ◽  
J.R. Ma ◽  
M. Wu ◽  
X.D. Huang ◽  
S.L. Gu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Raman Spectra ◽  
Annealing Process ◽  
Subsequent Annealing ◽  
Damage Distribution ◽  
Grain Sizes ◽  
Longitudinal Pattern

ABSTRACTIn this paper, we have developed a new way to recrystallize the poly-GeSi on SiO2. 300nm poly-GeSi was grown by RTP/VLP-CVD on SiO2/Si, and then amorphized by 180 keV-Si+ ion implantation with dose of 2×10'4 cm'2. An amorphized region with the damage distribution was formed. After subsequent annealing process, the comparison between the XRD scans and Raman spectra of poly-GeSi and poly-Si indicated that the annealed poly-GeSi was more recrystallized than the poly-Si in the same conditions, this was the inducement of Ge in the annealing process. The segregation of Ge atoms in the heavy damaged region would enhance this inducement. The XTEM showed the longitudinal pattern of GeSi grains which meant the longitudinal sizes were much greater than the horizontal sizes. After annealing process, the final GeSi grain sizes were greater than the poly-Si grain sizes processed in SSIC with the same implantation conditions.

Magnetoreflection in Ion-Implanted Graphite

1983 ◽  
Vol 27 ◽  
Author(s):  
L.E Mcneil ◽  
B.S. Elman ◽  
M.S Dresselhaus ◽  
G. Dresselhaus ◽  
T. Venkatesan
Keyword(s):  
Raman Spectroscopy ◽  
Band Structure ◽  
Ion Implantation ◽  
Room Temperature ◽  
Electronic Band Structure ◽  
Band Model ◽  
Electronic Band ◽  
Lattice Damage ◽  
Induced Changes ◽  
Foreign Species

ABSTRACTThe use of a hot stage (T ∼ 600°C) for ion implantation into graphite permits the introduction of foreign species into the host material while eliminating most of the lattice damage associated with ion implantation at room temperature. This permits the use of the magnetoreflection technique for examination of changes in the electronic band structure induced by implantation Samples of graphite implanted with 31P and 11B at various energies and fluences are examined, and the in-plane and c-axis disorder are characterized using Raman spectroscopy and Rutherford Backscattering Spectrometer (RBS) techniques. Implantation-induced changes in the electronic band structure are interpreted in terms of the Slonczewski-Weiss- McClure band model. Small changes are found relative to the band parameters that describe pristine graphite.

4H-SiC Defects Evolution by Thermal Processes

2017 ◽  
Vol 897 ◽  
pp. 181-184 ◽  
Author(s):  
Nicolò Piluso ◽  
Maria Ausilia di Stefano ◽  
Simona Lorenti ◽  
Francesco La Via
Keyword(s):  
Ion Implantation ◽  
Thermal Process ◽  
Defect Density ◽  
Annealing Process ◽  
Fine Tuning ◽  
Thermal Processes ◽  
Thermal Budget ◽  
Annealing Temperatures ◽  
Preliminary Annealing

4H-SiC defects evolution after thermal processes has been evaluated. Different annealing temperatures have been used to decrease the defect density of epitaxial layer (as stacking faults) and recover the damage occurred after ion implantation. The propagation of defects has been detected by Photoluminescence tool and monitored during the thermal processes. The results show that implants do not affect the surface roughness and how a preliminary annealing process, before ion implantation step, can be useful in order to reduce the SFs density. It shown the effect of tuned thermal process. A kind of defect, generated by implant and subsequent annealing, can be removed by an appropriate thermal budget, while others can increase. A fine tuning of thermal process parameters, temperature and timing, is useful to recover the crystallographic quality of the epilayer and increase the yield of the power device.

Micro-Raman Characterization of Unusual Defect Structure in Arsenic-Implanted Silicon

1999 ◽  
Vol 588 ◽  
Author(s):  
David D. Tuschel ◽  
James P. Lavine
Keyword(s):  
Raman Spectroscopy ◽  
Raman Spectra ◽  
Defect Structure ◽  
Optical Mode ◽  
Micro Raman Spectroscopy ◽  
Lattice Damage ◽  
Spatially Varying ◽  
Raman Characterization ◽  
Extensive Damage

AbstractRaman spectroscopy has often been used to study the damage to semiconductors induced by ion implantation. Off-axis, macro-Raman spectra reveal extensive damage to the silicon lattice, consistent with many literature reports. However, when the same samples were analyzed in the backscattering mode by micro-Raman spectroscopy, evidence was found for orientational dependent lattice damage and an unusual defect structure. P/O micro-Raman spectra reveal the spatially-varying appearance of a band between 505 and 510 cm−1 always accompanied by that of the silicon optical mode at 520 cm−1.

Self Annealing Ion Implantation in thin Silicon Films

1990 ◽  
Vol 201 ◽  
Author(s):  
J. D. Rubio ◽  
R. P. Vijay ◽  
R. R. Hart
Keyword(s):  
Ion Implantation ◽  
Elevated Temperatures ◽  
Annealing Process ◽  
Silicon Films ◽  
The Self ◽  
Sample Temperature ◽  
Strong Correlations ◽  
Medium Energy ◽  
Lattice Damage ◽  
Distinct Temperature

AbstractThe self annealing phenomenon was studied utilizing 1 cm diameter, 1 μm thick, <100> oriented silicon films. Previous results established the viability of the self annealing process for medium energy argon beams incident on similar targets [1]. In the current work, doubly aligned backscatter spectra were obtained to improve the sensitivity of the residual lattice damage measurements. In addition, some implantations were performed at elevated temperatures to independently determine the effect of the flux and the sample temperature on the self annealing process. The results showed strong correlations between the implantation flux, sample temperature and the residual lattice damage. Two distinct temperature regions were observed above and below 330 °C with corresponding activation energies of 1.5 eV and 0.1 eV.

Crystalline Recovery after Activation Annealing of Al Implanted 4H-SiC

2008 ◽  
Vol 600-603 ◽  
pp. 585-590
Author(s):  
Ryo Hattori ◽  
Tomokatsu Watanabe ◽  
T. Mitani ◽  
Hiroaki Sumitani ◽  
Tatsuo Oomori
Keyword(s):  
Ion Implantation ◽  
Time Dependence ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Recovery Mechanism ◽  
Poly Type ◽  
Scattering Centers ◽  
Activation Annealing ◽  
Type Recovery

Crystalline recovery mechanism in the activation annealing process of Al implanted 4H-SiC crystals were experimentally investigated. Annealing temperature and annealing time dependence of acceptor activation and activated hole’s behavior were examined. Poly-type recovery from the implantation induced lattice disordering during the annealing was investigated. The existence of meta-stable crystalline states for acceptor activation, and related scattering centers due to annealing is reported To achieve 100% acceptor activation and to reduce strain after ion implantation, annealing at 2000°C for 10 min. was required.

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