Comparative studies on lectin–carbohydrate interactions in low and high density homo- and heteroglycoclusters

2010 ◽  
Vol 8 (8) ◽  
pp. 1849 ◽  
Author(s):  
Marta Gómez-García ◽  
Juan M. Benito ◽  
Ricardo Gutiérrez-Gallego ◽  
Alfredo Maestre ◽  
Carmen Ortiz Mellet ◽  
...  
Keyword(s):  
Comparative Studies ◽  
High Density

scholarly journals Comparative studies of the deformation techniques for the singular-drift problem in the complex Langevin method

2018 ◽  
Vol 175 ◽  
pp. 07019 ◽  
Author(s):  
Yuta Ito ◽  
Jun Nishimura
Keyword(s):  
Low Temperature ◽  
Dirac Operator ◽  
Matrix Model ◽  
Comparative Studies ◽  
Deformation Parameter ◽  
High Density ◽  
Large N ◽  
Singular Drift ◽  
Different Types ◽  
Data Points

In application of the complex Langevin method to QCD at high density and low temperature, the singular-drift problem occurs due to the appearance of near-zero eigenvalues of the Dirac operator. In order to avoid this problem, we proposed to de-form the Dirac operator in such a way that the near-zero eigenvalues do not appear and to extrapolate the deformation parameter to zero from the available data points. Here we test three different types of deformation in a simple large-N matrix model, which under-goes an SSB due to the phase of the fermion determinant, and compare them to see the consistency with one another.

Comparative studies on catalytic and non-catalytic co-gasification of rubber seed shell and high density polyethylene mixtures

2014 ◽  
Vol 70 ◽  
pp. 303-314 ◽  
Author(s):  
Bridgid Lai Fui Chin ◽  
Suzana Yusup ◽  
Ahmed Al Shoaibi ◽  
Pravin Kannan ◽  
Chandrasekar Srinivasakannan ◽  
...  
Keyword(s):  
Comparative Studies ◽  
High Density Polyethylene ◽  
High Density ◽  
Rubber Seed

scholarly journals Comparative Studies on the Control Algorithm for the High-Density Ignition Regime in FFHR-d1

2020 ◽  
Vol 15 (0) ◽  
pp. 2405059-2405059
Author(s):  
Osamu MITARAI ◽  
Shota SUGIYAMA ◽  
Nagato YANAGI ◽  
Yoshiro NARUSHIMA ◽  
Ryuichi SAKAMOTO ◽  
...  
Keyword(s):  
Comparative Studies ◽  
Control Algorithm ◽  
High Density ◽  
Ignition Regime

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

Quantitative defect studies in semiconductor TEM samples prepared by low angle ion milling

1995 ◽  
Vol 53 ◽  
pp. 512-513
Author(s):  
L. Mulestagno ◽  
J.C. Holzer ◽  
P. Fraundorf
Keyword(s):  
Sample Preparation ◽  
Milling Time ◽  
High Density ◽  
Low Density ◽  
Ion Milling ◽  
High Quality ◽  
Variable Angle ◽  
Major Disadvantage ◽  
Induced Defects

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).

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