scholarly journals Magnetic silicon fullerene

2010 ◽  
Vol 12 (37) ◽  
pp. 11428 ◽  
Author(s):  
Jing Wang ◽  
Ying Liu ◽  
You-Cheng Li
Keyword(s):  
Silicon Fullerene

Energy transfer under photoexcitation of porous silicon-fullerene nanocomposite in oxygen-containing ambient

2006 ◽  
Vol 32 (2) ◽  
pp. 129-131 ◽  
Author(s):  
V. B. Pikulev ◽  
S. N. Kuznetsov ◽  
A. A. Saren ◽  
Yu. E. Gardin ◽  
V. A. Gurtov
Keyword(s):  
Energy Transfer ◽  
Porous Silicon ◽  
Silicon Fullerene

A density functional study of silicon fullerene endohedral X@Si20F20 and exohedral X-Si20F20 (X=O2−, S2−, Se2−) complexes

2014 ◽  
Vol 56 ◽  
pp. 69-73 ◽  
Author(s):  
Hadi Behzadi ◽  
Mehdi D. Esrafili ◽  
Sergio Manzetti ◽  
Payman Roonasi
Keyword(s):  
Density Functional ◽  
Functional Study ◽  
Density Functional Study ◽  
Silicon Fullerene

scholarly journals SYNTHESIS AND CONDUCTING PROPERTIES OF SILICONCARBON NANOSTRUCTURES OBTAINED BY THE METHOD HIGH-TEMPERATURE PLASMA-CHEMICAL SYNTHESIS

2020 ◽  
Author(s):  
Alim Mazinov ◽  
Andrey Tyutyunik ◽  
Vladimir Gurchenko
Keyword(s):  
Chemical Synthesis ◽  
Silicon Powder ◽  
Nanocrystalline Silicon ◽  
Powder Materials ◽  
Plasma Chemical ◽  
Temperature Plasma ◽  
Plasma Chemical Synthesis ◽  
Silicon Carbon ◽  
Temperature Dependences ◽  
Silicon Fullerene

A method for obtaining nanostructured carbon and silicon powder materials is considered. Shown are micrographs of the obtained nanocrystalline silicon. The temperature dependences of the conductivity of nanocrystalline silicon, fullerene-containing material, and a silicon-carbon compound obtained by plasma-chemical synthesis are presented.

Encapsulation of halide anions in perhydrogenated silicon fullerene: X−@Si20H20 (X=F, Cl, Br, I)

2005 ◽  
Vol 406 (4-6) ◽  
pp. 341-344 ◽  
Author(s):  
Fabio Pichierri ◽  
Vijay Kumar ◽  
Yoshiyuki Kawazoe
Keyword(s):  
Halide Anions ◽  
Silicon Fullerene

Fullerene sensitized silicon for near to mid infrared light detection

2010 ◽  
Vol 1247 ◽  
Author(s):  
Gebhard J. Matt ◽  
Mateusz Bednorz ◽  
Thomas Fromherz ◽  
Saeid Zamiri ◽  
Christoph Lungenschmied ◽  
...  
Keyword(s):  
Hybrid Approach ◽  
Cmos Technology ◽  
Infrared Light ◽  
Fullerene Derivative ◽  
Absorption Mechanism ◽  
Promising Candidate ◽  
Mid Infrared ◽  
Light Sensing ◽  
Silicon Fullerene ◽  
Photo Current

AbstractWe report on a novel light sensing scheme based on a silicon/fullerene-derivative hetero-junction that allows the realization of optoelectronic devices for the detection of near to mid infrared radiation. Despite the absent absorption of silicon and the fullerene-derivative for wavelengths beyond 1.1 µm and 0.72 µm, respectively, a hetero-junction of these materials absorbs and generates a photo-current due to absorption in the near to mid infrared. This photo-current is caused by an interfacial absorption mechanism [1].Besides its scientific relevance, the simple fabrication process of the hetero-junction (e.g. the fullerene-derivative is deposited by spin-coating on Si) as well as its compatibility with the established and rather cheap CMOS technology makes the presented hybrid approach a promising candidate for widespread applications.

Ti-Decorated Doped Silicon Fullerene: A Possible Hydrogen-Storage Material

2008 ◽  
Vol 112 (50) ◽  
pp. 19963-19968 ◽  
Author(s):  
Sonali Barman ◽  
Prasenjit Sen ◽  
G. P. Das
Keyword(s):  
Hydrogen Storage ◽  
Hydrogen Storage Material ◽  
Storage Material ◽  
Doped Silicon ◽  
Silicon Fullerene

scholarly journals M4@Si28 (M=Al,Ga): Metal-encapsulated tetrahedral silicon fullerene

2005 ◽  
Vol 123 (20) ◽  
pp. 204325 ◽  
Author(s):  
Yi Gao ◽  
X. C. Zeng
Keyword(s):  
Silicon Fullerene

Tunable electronic transport properties of silicon-fullerene-linked nanowires: Semiconductor, conducting wire, and tunnel diode

2010 ◽  
Vol 81 (11) ◽  
Author(s):  
Kengo Nishio ◽  
Taisuke Ozaki ◽  
Tetsuya Morishita ◽  
Masuhiro Mikami
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Tunnel Diode ◽  
Electronic Transport Properties ◽  
Conducting Wire ◽  
Silicon Fullerene

Encapsulation Chalcogen Anions in Perfluorinated Silicon Fullerene: X2−@Si20F20 (X=O, S, Se)

2011 ◽  
Vol 29 (10) ◽  
pp. 2063-2067 ◽  
Author(s):  
Hong Wang ◽  
Lin Wu
Keyword(s):  
Silicon Fullerene
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