Interaction of Self-Sustained Pulses in Tunnel-Diode Oscillator Lattices

A one-dimensional lattice in tunnel-diode (TD) oscillators supports self-sustained solitary pulses resulting from the balance between gain and attenuation. By applying the reduction theory to the device’s model equation, it is found that two relatively distant pulses moving in the lattice are mutually affected by a repulsive interaction. This property can be efficiently utilized in equalizing pulse positions to achieve jitter elimination. In particular, when two pulses rotate in a small, closed lattice, they separate evenly at the asymptotic limit. As a result, the lattice loop can provide an efficient platform to obtain low-phase-noise multiphase oscillatory signals. In this work, the interaction between two self-sustained pulses in a TD-oscillator lattice is examined, and the properties of interpulse interaction are validated by conducting several measurements using a test breadboarded lattice.

Modification of active region of resonant tunnel diode

Interest in the study of mesoscopic structures has grown significantly in recent years. This is primarily due to the development of semiconductor technology, which makes it possible to create structures with sizes of the order of units and tens of nanometers. The linear dimensions of such structures are inferior to the de Broglie wavelength of electrons, so the transport of electrons is determined mainly by their wave properties, which, in turn, leads to a number of new effects. Mesoscopic structures include the resonant tunnel diode (RTD), first proposed by Esaki and Tsu, and which is one of the first nanoelectronic devices. It consists of a semiconductor layer with a fairly narrow band gap, a quantum well (QW) layer located between two semiconductor layers (barriers) with a wider band gap. These layers, in turn, are located between the layers (spacers) of weakly doped narrow semiconductor, followed by highly doped layers of the emitter and collector. There are one or more energy levels of dimensional quantization in the QW. Under the action of bias voltage, the current passes through the RTD only if the emitter contains electrons that can tunnel. Resonant tunneling occurs at the energy level in the QW, and from there to the collector, where the spectrum of energy states is band. RTD has a very high speed of action, for example, it is known that the nonlinear properties of RTD persist up to 104 THz. The RTD is also of great power: it is the only device of nanoelectronics that can be used at room temperatures, and on the VAC of the RTD the areas of negative differential conductivity (NDC) are observed. In this article, the principle of a resonant tunneling diode is revealed, and the phenomena of tunneling in nanophysics are examined in detail. The volt-ampere characteristic (VAC) model of a two-barrier resonance tunnel diode is calculated. The paper investigates how the change of transparency coefficients and the reflection of the potential barrier of a rectangular shape affect the VAC of the RTD. This study can be the basis for further consideration of how the modification of the active region of the resonant tunnel diode affects its characteristics. In addition, the results of the research allow us to estimate qualitatively the energy required by electrons for tunneling through the structure of the RTD.

LIENAR’S EQUATION AS A METHOD OF CALCULATING ELECTRONIC CIRCUITS

Built approximate solutions of the Lienar equation in the form of high-frequency oscillation with variable envelope and phase. An analogue of this equation in radio electronics is the circuit of an auto generator containing a tunnel diode with a cubic approximation of volt-amperical characteristics.