Comparative electrochemical and impedance studies of self-assembled rigid-rod molecular wires and alkanethiols on gold substrates

2010 ◽  
Vol 12 (44) ◽  
pp. 14804 ◽  
Author(s):  
Francisco A. Aguiar ◽  
Rui Campos ◽  
Changsheng Wang ◽  
Rukkiat Jitchati ◽  
Andrei S. Batsanov ◽  
...  
Langmuir ◽  
2020 ◽  
Vol 36 (31) ◽  
pp. 9259-9268 ◽  
Author(s):  
Takashi Ito ◽  
Herman Coceancigh ◽  
Yi Yi ◽  
Jay N. Sharma ◽  
Fred C. Parks ◽  
...  

2019 ◽  
Vol 7 (45) ◽  
pp. 14088-14097
Author(s):  
Jonas von Irmer ◽  
Florian Frieß ◽  
Dominik Herold ◽  
Jonas Kind ◽  
Christina M. Thiele ◽  
...  

The photochromic and electrochemical switching capabilities of two dithienylethenes with different substitutions and their self-assembled monolayers on gold surfaces are characterized by in situ NMR-spectroscopy and cyclic voltammetry.


2006 ◽  
Vol 124 (15) ◽  
pp. 154704 ◽  
Author(s):  
M. Durkut ◽  
M. Mas-Torrent ◽  
P. Hadley ◽  
P. Jonkheijm ◽  
A. P. H. J. Schenning ◽  
...  

2014 ◽  
Vol 118 (13) ◽  
pp. 7229-7234 ◽  
Author(s):  
Quirina Ferreira ◽  
Ana M. Bragança ◽  
Luís Alcácer ◽  
Jorge Morgado

2007 ◽  
Vol 7 (1) ◽  
pp. 138-150 ◽  
Author(s):  
Chao Li ◽  
Bo Lei ◽  
Wendy Fan ◽  
Daihua Zhang ◽  
M. Meyyappan ◽  
...  

This article reviews the recent research of molecular memory based on self-assembled nanowire–molecular wire heterostructures. These devices exploit a novel concept of using redox-active molecules as charge storage flash nodes for nanowire transistors, and thus boast many advantages such as room-temperature processing and nanoscale device area. Various key elements of this technology will be reviewed, including the synthesis of the nanowires and molecular wires, and fabrication and characterization of the molecular memory devices. In particular, multilevel memory has been demonstrated using In2O3 nanowires with self-assembled Fe-bis(terpyridine) molecules, which serve to multiple the charge storage density without increasing the device size. Furthermore, in-depth studies on memory devices made with different molecules or with different functionalization techniques will be reviewed and analyzed. These devices represent a conceptual breakthrough in molecular memory and may work as building blocks for future beyond-CMOS nanoelectronic circuits.


2009 ◽  
Vol 11 (29) ◽  
pp. 6199 ◽  
Author(s):  
Wei-Chun Lin ◽  
Szu-Hsian Lee ◽  
Manuel Karakachian ◽  
Bang-Ying Yu ◽  
Ying-Yu Chen ◽  
...  

2003 ◽  
Vol 107 (17) ◽  
pp. 4107-4110 ◽  
Author(s):  
Yasushi Yamauchi ◽  
Taku Suzuki ◽  
Mitsunori Kurahashi ◽  
Xin Ju

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