Charge-transfer-featured materials—promising hosts for fabrication of efficient OLEDs through triplet harvesting via triplet fusion

Jie Zhou; Ping Chen; Xu Wang; Yan Wang; Yi Wang; Feng Li; Minghui Yang; Yan Huang; Junsheng Yu; Zhiyun Lu

doi:10.1039/c4cc00576g

Charge-transfer-featured materials—promising hosts for fabrication of efficient OLEDs through triplet harvesting via triplet fusion

Chemical Communications ◽

10.1039/c4cc00576g ◽

2014 ◽

Vol 50 (57) ◽

pp. 7586-7589 ◽

Cited By ~ 42

Author(s):

Jie Zhou ◽

Ping Chen ◽

Xu Wang ◽

Yan Wang ◽

Yi Wang ◽

...

Keyword(s):

Charge Transfer ◽

Delay Fluorescence ◽

P Type ◽

Triplet Harvesting

An ICT-featured compound with a small ΔEST but a lower lying 3ππ* state than 3CT state is demonstrated to show P-type rather than E-type delay fluorescence, and is a quite promising OLED host.

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Nonchemical n- and p-Type Charge Transfer Doping of FAPbI3 Perovskite

ACS Energy Letters ◽

10.1021/acsenergylett.1c01233 ◽

2021 ◽

pp. 2817-2824

Author(s):

Chunqing Ma ◽

Bosung Kim ◽

Dong-Ho Kang ◽

Sang-Woo Kim ◽

Nam-Gyu Park

Keyword(s):

Charge Transfer ◽

P Type

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p ‐Type Charge Transfer Doping of Graphene Oxide with (NiCo) 1− y Fe y O x for Air‐Stable, All‐Inorganic CsPbIBr 2 Perovskite Solar Cells

Angewandte Chemie International Edition ◽

10.1002/anie.202016703 ◽

2021 ◽

Vol 60 (19) ◽

pp. 10608-10613

Author(s):

Jian Du ◽

Jialong Duan ◽

Xiya Yang ◽

Yanyan Duan ◽

Quanzhu Zhou ◽

...

Keyword(s):

Graphene Oxide ◽

Solar Cells ◽

Charge Transfer ◽

Perovskite Solar Cells ◽

P Type

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p-type conductivity in silicon nanowires induced by heterojunction interface charge transfer

Applied Physics Letters ◽

10.1063/1.3501122 ◽

2010 ◽

Vol 97 (15) ◽

pp. 153126 ◽

Cited By ~ 19

Author(s):

G. D. Yuan ◽

T. W. Ng ◽

Y. B. Zhou ◽

F. Wang ◽

W. J. Zhang ◽

...

Keyword(s):

Charge Transfer ◽

Silicon Nanowires ◽

Type Conductivity ◽

Interface Charge ◽

P Type ◽

Interface Charge Transfer

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Surface charge transfer induced p-CdS nanoribbon/n-Si heterojunctions as fast-speed self-driven photodetectors

Journal of Materials Chemistry C ◽

10.1039/c5tc01016k ◽

2015 ◽

Vol 3 (24) ◽

pp. 6307-6313 ◽

Cited By ~ 18

Author(s):

Chao Xie ◽

Fangze Li ◽

Longhui Zeng ◽

Linbao Luo ◽

Li Wang ◽

...

Keyword(s):

Charge Transfer ◽

Surface Charge ◽

Fast Speed ◽

Type Silicon ◽

P Type

Heterojunctions composed of single p-type CdS nanoribbons (NRs) and n-type silicon (Si) were successfully fabricated and can be applied as fast-speed self-driven visible photodetectors.

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Rich p -type-doping phenomena in boron-substituted silicene systems

Royal Society Open Science ◽

10.1098/rsos.200723 ◽

2020 ◽

Vol 7 (12) ◽

pp. 200723

Author(s):

Hai Duong Pham ◽

Wu-Pei Su ◽

Thi Dieu Hien Nguyen ◽

Ngoc Thanh Thuy Tran ◽

Ming-Fa Lin

Keyword(s):

Charge Transfer ◽

Fermi Level ◽

Charge Density ◽

Electronic Properties ◽

First Principles ◽

Chemical Environment ◽

First Principles Calculations ◽

Density Distributions ◽

Essential Properties ◽

P Type

The essential properties of monolayer silicene greatly enriched by boron substitutions are thoroughly explored through first-principles calculations. Delicate analyses are conducted on the highly non-uniform Moire superlattices, atom-dominated band structures, charge density distributions and atom- and orbital-decomposed van Hove singularities. The hybridized 2 p z –3 p z and [2s, 2 p x , 2 p y ]–[3s, 3 p x , 3 p y ] bondings, with orthogonal relations, are obtained from the developed theoretical framework. The red-shifted Fermi level and the modified Dirac cones/ π bands/ σ bands are clearly identified under various concentrations and configurations of boron-guest atoms. Our results demonstrate that the charge transfer leads to the non-uniform chemical environment that creates diverse electronic properties.

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