Towards a unified description of the charge transport mechanisms in conductive atomic force microscopy studies of semiconducting polymers

Nanoscale ◽  
2014 ◽  
Vol 6 (18) ◽  
pp. 10596-10603 ◽  
Author(s):  
D. Moerman ◽  
N. Sebaihi ◽  
S. E. Kaviyil ◽  
P. Leclère ◽  
R. Lazzaroni ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Carrier Mobility ◽  
Semiconducting Polymers ◽  
Transport Mechanisms ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Local Current ◽  
Unified Description

The nanoscale electrical properties of fibrillate poly-3-hexylthiophene are studied using conducting-AFM. The conditions for the prevalence of either local or bulk resistances dominated regime are identified. As local current is space charge limited, an analytical model is derived to determine locally carrier mobility and density.

Using Conductive Atomic Force Microscopy to the Evaluate Electrical Properties of MoS2 nanoparticles for Device Applications

2021 ◽  
Vol 104 (3) ◽  
pp. 17-19
Author(s):  
Aisha Alhammadi ◽  
Wafa Alnaqbi ◽  
Juveiriah Ashraf ◽  
Ayman Rezk ◽  
Ammar Nayfeh
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Device Applications ◽  
Mos2 Nanoparticles

Modification of electrical properties of tungsten oxide nanorods using conductive atomic force microscopy

2007 ◽  
Vol 601 (13) ◽  
pp. 2684-2687 ◽  
Author(s):  
Ph. Guaino ◽  
M. Gillet ◽  
R. Delamare ◽  
E. Gillet
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Tungsten Oxide ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Oxide Nanorods

Investigation of Epitaxial GaN Films by Conductive Atomic Force Microscopy

2003 ◽  
Vol 764 ◽  
Author(s):  
S. Dogan ◽  
J. Spradlin ◽  
J. Xie ◽  
A. A. Pomarico ◽  
R. Cingolani ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Sample Surface ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Topological Features ◽  
Atomic Force ◽  
Local Current ◽  
Semiconductor Junction ◽  
Surrounding Areas ◽  
Conduction Properties

AbstractThe current conduction in GaN is very topical and is the topic of a vast amount of research. By simultaneously mapping the topography and the current distribution, conductive atomic force microscopy (C-AFM) has the potential to establish a correlation between topological features and localized current paths. In this study, this technique was applied to image the conduction properties of as-grown and post-growth chemically etched samples GaN epitaxial layers on a microscopic scale. Our results show that prismatic planes have a significantly higher conductivity than the surrounding areas of the sample surface. A large and stable local current was mainly observed from the walls of the etched pits, under forward and reverse bias of the metallized AFM tip/semiconductor junction.

Electrical properties of Molecular Beam Epitaxy grown Barium Titanate probed by conductive Atomic Force Microscopy

2017 ◽  
Vol 642 ◽  
pp. 324-327
Author(s):  
Simon Martin ◽  
Nicolas Baboux ◽  
David Albertini ◽  
Brice Gautier
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Barium Titanate ◽  
Molecular Beam ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Clustering of Gold on 6H-SiC and Local Nanoscale Electrical Properties

2007 ◽  
Vol 131-133 ◽  
pp. 517-522
Author(s):  
Francesco Ruffino ◽  
Filippo Giannazzo ◽  
Fabrizio Roccaforte ◽  
Vito Raineri ◽  
Maria Grazia Grimaldi
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Ballistic Transport ◽  
Gold Nanoclusters ◽  
Nanostructured Material ◽  
Self Organization ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Electron Quantum

In this work, a methodology, based on a self-organization process, to form gold nanoclusters on the 6H-SiC surface, is illustrated. By scanning electron microscopy and atomic force microscopy the gold self-organization induced by annealing processes was studied and modelled by classical limited surface diffusion ripening theories. These studies allowed us to fabricate Au nanoclusres/SiC nanostructured materials with tunable structural properties. The local electrical properties of such a nanostructured material were probed, by conductive atomic force microscopy collecting high statistics of I-V curves. The main observed result was the Schottky barrier height (SBH) dependence on the cluster size. This behaviour is interpreted considering the physics of few electron quantum dots merged with the ballistic transport. A quite satisfying agreement between the theoretical forecast behaviour and the experimental data has been found.

Characterization of local electrical properties of polycrystalline silicon thin films and hydrogen termination effect by conductive atomic force microscopy

2009 ◽  
Vol 94 (18) ◽  
pp. 182104 ◽  
Author(s):  
Emi Machida ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki ◽  
Ryohei Kokawa ◽  
Takeshi Ito ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Polycrystalline Silicon ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Silicon Thin Films ◽  
Atomic Force ◽  
Hydrogen Termination

Behavior of Local Current Leakage in Stressed Gate SiO2Films Analyzed by Conductive Atomic Force Microscopy

2004 ◽  
Vol 43 (7B) ◽  
pp. 4683-4686 ◽  
Author(s):  
Akiyoshi Seko ◽  
Yukihiko Watanabe ◽  
Hiroki Kondo ◽  
Akira Sakai ◽  
Shigeaki Zaima ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Conductive Atomic Force Microscopy ◽  
Current Leakage ◽  
Force Microscopy ◽  
Atomic Force ◽  
Local Current

scholarly journals Electrical Properties of Self-Assembled Nano-Schottky Diodes

2008 ◽  
Vol 2008 ◽  
pp. 1-7 ◽  
Author(s):  
F. Ruffino ◽  
A. Canino ◽  
M. G. Grimaldi ◽  
F. Giannazzo ◽  
F. Roccaforte ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Rutherford Backscattering Spectrometry ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Self Organization ◽  
Conductive Atomic Force Microscopy ◽  
Au Nanoclusters ◽  
Force Microscopy ◽  
Atomic Force

A bottom-up methodology to fabricate a nanostructured material by Au nanoclusters on 6H-SiC surface is illustrated. Furthermore, a methodology to control its structural properties by thermal-induced self-organization of the Au nanoclusters is demonstrated. To this aim, the self-organization kinetic mechanisms of Au nanoclusters on SiC surface were experimentally studied by scanning electron microscopy, atomic force microscopy, Rutherford backscattering spectrometry and theoretically modelled by a ripening process. The fabricated nanostructured materials were used to probe, by local conductive atomic force microscopy analyses, the electrical properties of nano-Schottky contact Au nanocluster/SiC. Strong efforts were dedicated to correlate the structural and electrical characteristics: the main observation was the Schottky barrier height dependence of the nano-Schottky contact on the cluster size. Such behavior was interpreted considering the physics of few electron quantum dots merged with the concepts of ballistic transport and thermoionic emission finding a satisfying agreement between the theoretical prediction and the experimental data. The fabricated Au nanocluster/SiC nanocontact is suggested as a prototype of nano-Schottky diode integrable in complex nanoelectronic circuits.

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