Incorporating Ce3+ into a high efficiency phosphor Ca2PO4Cl:Eu2+ and its luminescent properties

RSC Advances ◽  
2014 ◽  
Vol 4 (53) ◽  
pp. 27708-27713 ◽  
Author(s):  
Panlai Li ◽  
Zhijun Wang ◽  
Zhiping Yang ◽  
Qinglin Guo
Keyword(s):  
Thermal Stability ◽  
Potential Application ◽  
High Efficiency ◽  
Blue Emission ◽  
Luminescent Properties ◽  
Excellent Thermal Stability ◽  
Uv Excitation

Ca2PO4Cl:Ce3+, Eu2+ can produce the intense blue emission under the n-UV excitation, and have the excellent thermal stability. Based on the results, we are currently evaluating the potential application of Ca2PO4Cl:Ce3+, Eu2+ as a blue-emitting n-UV convertible phosphor.

Lead-free A2Bi4Ti5O18 thin film capacitors (A = Ba and Sr) with large energy storage density, high efficiency, and excellent thermal stability

2019 ◽  
Vol 7 (7) ◽  
pp. 1888-1895 ◽  
Author(s):  
Bingbing Yang ◽  
Mengyao Guo ◽  
Xianwu Tang ◽  
Renhuai Wei ◽  
Ling Hu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Energy Storage ◽  
High Efficiency ◽  
Lead Free ◽  
Energy Storage Density ◽  
Excellent Thermal Stability ◽  
Storage Density ◽  
Storage Performance ◽  
Thin Film Capacitors

The energy storage performance of Ba2Bi4Ti5O18 thin film (left) and the atomic schematic structure of A2Bi4Ti5O18 (right).

Energy transfer and luminescent properties of Ca8MgLu(PO4)7:Tb3+/Eu3+ as a green-to-red color tunable phosphor under NUV excitation

RSC Advances ◽  
2015 ◽  
Vol 5 (74) ◽  
pp. 59830-59836 ◽  
Author(s):  
Feiyan Xie ◽  
Junhao Li ◽  
Zhiyue Dong ◽  
Dawei Wen ◽  
Jianxin Shi ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Energy Transfer ◽  
Luminescent Properties ◽  
Potential Candidate ◽  
Efficient Energy Transfer ◽  
Excellent Thermal Stability ◽  
Efficient Energy ◽  
Red Color ◽  
Color Tunable ◽  
Tunable Emission

Ca8MgTb(PO4)7:Eu3+ phosphor, a potential candidate for application in NUV-based WLEDs, can show efficient energy transfer from Tb3+ to Eu3+, color-tunable emission from green to pure red and excellent thermal stability.

Design of a novel scandium silicate based blue-emitting phosphor with high efficiency and robust thermal stability for warm WLEDs and field emission displays

2019 ◽  
Vol 3 (10) ◽  
pp. 2120-2127 ◽  
Author(s):  
Qiang Zhang ◽  
Xicheng Wang ◽  
Zuobin Tang ◽  
Yuhua Wang
Keyword(s):  
Thermal Stability ◽  
Field Emission ◽  
Potential Application ◽  
High Efficiency ◽  
Luminescence Properties ◽  
Field Emission Displays

A novel blue-emitting phosphor is synthesized, and its luminescence properties and potential application for WLEDs and FEDs are explored.

Synthesis and luminescent properties of a novel green-emitting Tb(III) complex and the excellent thermal stability for application

2016 ◽  
Vol 54 ◽  
pp. 170-175 ◽  
Author(s):  
Chen Yuan ◽  
Hongde Xie ◽  
Haijun Cai ◽  
Cuili Chen ◽  
Peiqing Cai ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Luminescent Properties ◽  
Excellent Thermal Stability

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Sign in / Sign up

Export Citation Format

Share Document