Low temperature plasma processing of nc-Si/a-SiNx:H QD thin films with high carrier mobility and preferred (220) crystal orientation: a promising material for third generation solar cells

RSC Advances ◽  
2014 ◽  
Vol 4 (70) ◽  
pp. 36929-36939 ◽  
Author(s):  
Basudeb Sain ◽  
Debajyoti Das

The nc-Si-QDs/a-SiNx:H (∼5.7–1.3 nm) thin-films grown by low-temperature Inductively-coupled plasma, possess high carrier-mobility, electrical-conductivity, photosensitivity and preferred (220) crystal orientation, suitable for third-generation solar cells.

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Recently, hybrid lead-halide perovskites have attracted extensive attention because of their unique optoelectronic characteristics, such as ambipolar charge transport, tunable bandgap, high carrier mobility, low-temperature processing technique, and so on....


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T. G. Holesinger ◽  
Q. X. Jia ◽  
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Three-dimensional non-fullerene acceptors with a spiro core linked with S/Se fused perylene diimides possess appropriate energy levels, twisted molecular configuration and high carrier mobility, leading to a PCE of 6.95% for organic solar cells.


2020 ◽  
Vol 46 (2) ◽  
pp. 2173-2177 ◽  
Author(s):  
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