Low temperature plasma processing of nc-Si/a-SiNx:H QD thin films with high carrier mobility and preferred (220) crystal orientation: a promising material for third generation solar cells
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The nc-Si-QDs/a-SiNx:H (∼5.7–1.3 nm) thin-films grown by low-temperature Inductively-coupled plasma, possess high carrier-mobility, electrical-conductivity, photosensitivity and preferred (220) crystal orientation, suitable for third-generation solar cells.
2019 ◽
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2011 ◽
Vol 12
(4)
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pp. 169-173
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2020 ◽
Vol 8
(20)
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pp. 6749-6755
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2020 ◽
Vol 46
(2)
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pp. 2173-2177
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