Epitaxial (001) BiFeO3 thin-films with excellent ferroelectric properties by chemical solution deposition-the role of gelation

2015 ◽  
Vol 3 (3) ◽  
pp. 582-595 ◽  
Author(s):  
Qi Zhang ◽  
Nagarajan Valanoor ◽  
Owen Standard
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Ferroelectric Properties ◽  
Critical Role ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Bifeo3 Thin Films

The critical role of gelation is demonstrated in order to achieve epitaxial (001)-BFO thin films with robust room-temperature ferroelectric properties.

Ferroelectric Properties of (La, Mn)-Codoped BiFeO3 Thin Films Prepared by Chemical Solution Deposition

2007 ◽  
Vol 51 (12) ◽  
pp. 138 ◽  
Author(s):  
Eun Jin CHOI ◽  
Sang Su KIM ◽  
Jin Won KIM ◽  
Moon Heum PARK ◽  
Hyun Kyung CHO ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Bifeo3 Thin Films

Enhanced ferroelectric properties of Cr-doped BiFeO3 thin films grown by chemical solution deposition

2006 ◽  
Vol 88 (13) ◽  
pp. 132901 ◽  
Author(s):  
Jong Kuk Kim ◽  
Sang Su Kim ◽  
Won-Jeong Kim ◽  
Amar S. Bhalla ◽  
Ruyan Guo
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Bifeo3 Thin Films

scholarly journals Growth of BiFeO3 thin films by chemical solution deposition: the role of electrodes

2017 ◽  
Vol 19 (22) ◽  
pp. 14337-14344 ◽  
Author(s):  
Monika Tomczyk ◽  
Daniel G. Stroppa ◽  
Ian M. Reaney ◽  
Paula M. Vilarinho
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Bifeo3 Thin Films

BiFeO3 (BFO) thin films were grown by chemical solution deposition on a range of electrodes to determine their role in controlling the phase formation and microstructure of the films.

Ferroelectric Properties Improvement of Mn-Doped 0.7BiFeO3-0.3BaTiO3 Thin Films Fabricated by Chemical Solution Deposition

2013 ◽  
Vol 566 ◽  
pp. 159-162
Author(s):  
Yuya Ito ◽  
Makoto Moriya ◽  
Wataru Sakamoto ◽  
Toshinobu Yogo
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Electric Fields ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Homogeneous Surface

Ferroelectric 0.7BiFeO3-0.3BaTiO3 and 0.7BiFe0.95Mn0.05O3-0.3BaTiO3 thin films were prepared by the chemical solution deposition. Perovskite single-phase thin films with homogeneous surface morphology were successfully fabricated at 700°C on Pt/TiOx/SiO2/Si substrates. Although typical polarization (P)-electric field (E) hysteresis loops were observed for 0.7BiFeO3-0.3BaTiO3 thin films, their insulation resistance was relatively low at room temperature. Mn doping for Fe site of the 0.7BiFeO3-0.3BaTiO3 was very effective in improving leakage current properties. In 0.7BiFe0.95Mn0.05O3-0.3BaTiO3 thin films, the abrupt increase in leakage current was suppressed even at high electric fields, leading to the well-shaped P-E hysteresis loops at ambient temperatures. Remanent polarization and coercive field of the 0.7Bi (Fe0.95Mn0.05)O3-0.3Bi0.5Na0.5TiO3 films at room temperature were approximately 26 μC/cm2 and 130 kV/cm, respectively.

Synthesis and Properties of Mn-Doped (Bi0.5Na0.5)TiO3 Thin Films by Chemical Solution Deposition

2013 ◽  
Vol 582 ◽  
pp. 59-62 ◽  
Author(s):  
Narimichi Makino ◽  
Bong Yeon Lee ◽  
Makoto Moriya ◽  
Wataru Sakamoto ◽  
Takashi Iijima ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Si Substrates ◽  
Mn Doped

Lead-free ferroelectric (Bi0.5Na0.5)TiO3(BNT) thin films were prepared by chemical solution deposition. BNT and Mn-doped BNT precursor thin films crystallized in the perovskite single phase at 700 °C on Pt/TiOx/SiO2/Si substrates. The leakage current density of the perovskite BNT films, especially in the high applied field region, was reduced by doping with a small amount of Mn. Also, Mn doping markedly improved the ferroelectric properties of the films. 0.5 and 1.0 mol% Mn-doped BNT thin films exhibited well-shaped ferroelectric polarization (P) electric field (E) hysteresis loops at room temperature. Furthermore, the 1 mol% Mn-doped BNT films showed a typical field-induced strain loop, and the effectived33values were estimated to be about 60 pm/V.

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