Synthesis and Properties of Mn-Doped (Bi0.5Na0.5)TiO3 Thin Films by Chemical Solution Deposition

Lead-free ferroelectric (Bi0.5Na0.5)TiO3(BNT) thin films were prepared by chemical solution deposition. BNT and Mn-doped BNT precursor thin films crystallized in the perovskite single phase at 700 °C on Pt/TiOx/SiO2/Si substrates. The leakage current density of the perovskite BNT films, especially in the high applied field region, was reduced by doping with a small amount of Mn. Also, Mn doping markedly improved the ferroelectric properties of the films. 0.5 and 1.0 mol% Mn-doped BNT thin films exhibited well-shaped ferroelectric polarization (P) electric field (E) hysteresis loops at room temperature. Furthermore, the 1 mol% Mn-doped BNT films showed a typical field-induced strain loop, and the effectived33values were estimated to be about 60 pm/V.

Download Full-text

Influence of Excess Potassium on Structural and Ferroelectric Properties of Lead-Free Bi0.5K0.5TiO3 Thin Films

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2021.19117 ◽

2021 ◽

Vol 21 (4) ◽

pp. 2681-2686

Author(s):

Nguyen Ngoc Minh ◽

Bui Van Dan ◽

Nguyen Duc Minh ◽

Guus Rijnders ◽

Ngo Duc Quan

Keyword(s):

Thin Films ◽

Chemical Solution Deposition ◽

Single Phase ◽

Ferroelectric Properties ◽

Lead Free ◽

Chemical Solution ◽

Ferroelectric Films ◽

Solution Deposition ◽

Si Substrates ◽

Excess Amount

Lead-free Bi0.5K0.5TiO3 (BKT) ferroelectric films were synthesized on Pt/Ti/SiO2/Si substrates via the chemical solution deposition. The influence of the excess potassium on the microstructures and the ferroelectric properties of the films was investigated in detail. The results showed that the BKT films have reached the well-crystallized state in the single-phase perovskite structure with 20 mol.% excess amount of potassium. For this film, the ferroelectric properties of the films were significantly enhanced. The remnant polarization (Pr) and maximum polarization (Pm) reached the highest values of 9.4 μC/cm2 and 32.2 μC/cm2, respectively, under the electric field of 400 kV/cm.

Download Full-text

Ferroelectric Properties Improvement of Mn-Doped 0.7BiFeO3-0.3BaTiO3 Thin Films Fabricated by Chemical Solution Deposition

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.566.159 ◽

2013 ◽

Vol 566 ◽

pp. 159-162

Author(s):

Yuya Ito ◽

Makoto Moriya ◽

Wataru Sakamoto ◽

Toshinobu Yogo

Keyword(s):

Thin Films ◽

Leakage Current ◽

Electric Fields ◽

Chemical Solution Deposition ◽

Room Temperature ◽

Ferroelectric Properties ◽

Hysteresis Loops ◽

Chemical Solution ◽

Solution Deposition ◽

Homogeneous Surface

Ferroelectric 0.7BiFeO3-0.3BaTiO3 and 0.7BiFe0.95Mn0.05O3-0.3BaTiO3 thin films were prepared by the chemical solution deposition. Perovskite single-phase thin films with homogeneous surface morphology were successfully fabricated at 700°C on Pt/TiOx/SiO2/Si substrates. Although typical polarization (P)-electric field (E) hysteresis loops were observed for 0.7BiFeO3-0.3BaTiO3 thin films, their insulation resistance was relatively low at room temperature. Mn doping for Fe site of the 0.7BiFeO3-0.3BaTiO3 was very effective in improving leakage current properties. In 0.7BiFe0.95Mn0.05O3-0.3BaTiO3 thin films, the abrupt increase in leakage current was suppressed even at high electric fields, leading to the well-shaped P-E hysteresis loops at ambient temperatures. Remanent polarization and coercive field of the 0.7Bi (Fe0.95Mn0.05)O3-0.3Bi0.5Na0.5TiO3 films at room temperature were approximately 26 μC/cm2 and 130 kV/cm, respectively.

Download Full-text

Room temperature ferroelectric properties and leakage current characterics of Bi2 FeMnO6 /SrTiO3 bilayered thin films by chemical solution deposition

physica status solidi (a) ◽

10.1002/pssa.201330617 ◽

2014 ◽

Vol 211 (7) ◽

pp. 1499-1502 ◽

Cited By ~ 1

Author(s):

L. M. Shen ◽

X. G. Tang ◽

Q. X. Liu ◽

Y. P. Jiang ◽

Y. G. Wang ◽

...

Keyword(s):

Thin Films ◽

Leakage Current ◽

Chemical Solution Deposition ◽

Room Temperature ◽

Ferroelectric Properties ◽

Chemical Solution ◽

Solution Deposition

Download Full-text

Ti-site Substitution Using the Higher-valent Cation for Enhancing the Ferroelectric Properties of Nd3+−substituted Bismuth Titanate Thin Films

MRS Proceedings ◽

10.1557/proc-784-c11.8 ◽

2003 ◽

Vol 784 ◽

Author(s):

Hiroshi Uchida ◽

Seiichiro Koda ◽

Hirofumi Matsuda ◽

Takashi Iijima ◽

Takayuki Watanabe ◽

...

Keyword(s):

Thin Films ◽

Coercive Field ◽

Chemical Solution Deposition ◽

Remanent Polarization ◽

Bismuth Titanate ◽

Ferroelectric Properties ◽

Ferroelectric Thin Films ◽

Chemical Solution ◽

Solution Deposition ◽

Si Substrates

ABSTRACTTi-site substitution using the higher-valent cation was performed on ferroelectric thin films of neodymium-substituted bismuth titanate, (Bi,Nd)4Ti3O12(BNT), in order to improve its ferroelectric properties by compensating the space charge in BIT-based crystal. Ti-site-substituted BNT films, (Bi3.50Nd0.50)1-(x/12)(Ti3.00-xVx)O15(x= 0 ∼ 0.09), were fabricated on (111)Pt/Ti/ SiO2/(100)Si substrates using a chemical solution deposition (CSD) technique. V5+-substitution enhanced the remanent polarization of BNT film without change in the coercive field. V5+-substitution also exhibited the possibilities for improving the endurance against leakage current and fatigue degradation.

Download Full-text

Epitaxial (001) BiFeO3 thin-films with excellent ferroelectric properties by chemical solution deposition-the role of gelation

Journal of Materials Chemistry C ◽

10.1039/c4tc02371d ◽

2015 ◽

Vol 3 (3) ◽

pp. 582-595 ◽

Cited By ~ 29

Author(s):

Qi Zhang ◽

Nagarajan Valanoor ◽

Owen Standard

Keyword(s):

Thin Films ◽

Chemical Solution Deposition ◽

Room Temperature ◽

Ferroelectric Properties ◽

Critical Role ◽

Chemical Solution ◽

Solution Deposition ◽

Bifeo3 Thin Films

The critical role of gelation is demonstrated in order to achieve epitaxial (001)-BFO thin films with robust room-temperature ferroelectric properties.

Download Full-text

Phase Transition and Dielectric Tunability of Chemical Solution Deposited (Pb0.35Sr0.65)(Zr0.5Ti0.5)O3 Thin Films on Pt/ZrO2/SiO2/Si Substrates

MRS Proceedings ◽

10.1557/proc-1034-k10-40 ◽

2007 ◽

Vol 1034 ◽

Author(s):

Naba K Karan ◽

Marilin Perez ◽

Jose Saavedra ◽

Dillip K Pradhan ◽

Reji Thomas ◽

...

Keyword(s):

Thin Films ◽

Phase Transition ◽

Seed Layer ◽

Room Temperature ◽

Single Phase ◽

Frequency Dispersion ◽

Chemical Solution ◽

Solution Deposition ◽

Si Substrates ◽

Dielectric Constant And Loss

Abstract(Pb0.35Sr0.65)(Zr0.5Ti0.5)O3 thin films were grown on Pt/ZrO2/SiO2/Si substrates by chemical solution deposition. As-deposited (pyrolysed at 500°C) films were amorphous and single phase films were obtained at temperature as low as 550°C with a 30 nm SrTiO3 seed layer. Dielectric constant and loss tangent at room temperature were 210 and 0.022, respectively at 100 kHz for the film annealed at 700°C. Frequency dispersion of the dielectric properties was low. The phase transition temperature (ferroelectric to paraelectric) was well below the room temperature and was around 220 K. The room temperature tunability and the k-factor at 500 kV/cm was around 45% and 16, respectively.

Download Full-text