Trapping chlorine radicals via substituting nitro radicals in the gas phase

2016 ◽  
Vol 8 (1) ◽  
pp. 25-28
Author(s):  
Akira Seto ◽  
Yuki Ochi ◽  
Hiroaki Gotoh ◽  
Kazuhisa Sakakibara ◽  
Shota Hatazawa ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Gas Phase ◽  
Laser Photolysis ◽  
Quadrupole Mass ◽  
Yag Laser ◽  
Quadrupole Mass Spectrometry ◽  
Chlorine Radicals ◽  
Ion Attachment

Chlorine radicals (Cl˙), generated by the YAG laser photolysis (λ = 355 nm) of Cl2 in the gas phase, were captured by using 2,2-diphenyl-1-picrylhydrazyl (DPPH˙) and were characterized using ion attachment ionization-quadrupole mass spectrometry.

Detection of gas-phase species in MOCVD of GaN using molecular beam quadrupole mass spectrometry

2000 ◽  
Vol 319 (5-6) ◽  
pp. 477-481 ◽  
Author(s):  
Jörg Schäfer ◽  
Andreas Simons ◽  
Jürgen Wolfrum ◽  
Roland A Fischer
Keyword(s):  
Mass Spectrometry ◽  
Gas Phase ◽  
Molecular Beam ◽  
Quadrupole Mass ◽  
Quadrupole Mass Spectrometry

Gas Phase Chemistry Study During Deposition of a-Si:H and μc-Si:H Films by HWCVD using Quadrupole Mass Spectrometry

2002 ◽  
Vol 715 ◽  
Author(s):  
Samadhan B. Patil ◽  
Alka A. Kumbhar ◽  
R. O. Dusane
Keyword(s):  
Mass Spectrometry ◽  
Gas Phase ◽  
Chemical Species ◽  
Quadrupole Mass ◽  
Film Properties ◽  
Quadrupole Mass Spectrometry ◽  
Gas Phase Chemistry ◽  
Hydrogen Dilution ◽  
Phase Chemistry

AbstractAmorphous and microcrystalline silicon films were deposited by HWCVD under different deposition conditions and the gas phase chemistry was studied by in situ Quadrupole Mass Spectrometry. Attempt is made to correlate the properties of the films with the gas phase chemistry during deposition. Interestingly, unlike in PECVD, partial pressure of H2 is higher than any other species during deposition of a-Si:H as well as μc-Si:H. Effect of hydrogen dilution on film properties and on concentration of various chemical species in the gas phase is studied. For low hydrogen dilution [H2]/ [SiH4] from 0 to 1 (where [SiH4] is 10 sccm), all films deposited are amorphous with photoconductivity gain of ∼ 106. During deposition of these amorphous films SiH2 was dominant in gas phase next to [H2]. Interestingly [Si]/[SiH2] ratio increases from 0.4 to 0.5 as dilution increased from 0 to 1, and further to more than 1 for higher hydrogen dilution leading to [Si] dominance. At hydrogen dilution ratio 20, consequently films deposited were microcrystalline.

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