Self limiting atomic layer deposition of Al2O3 on perovskite surfaces: a reality?

Nanoscale ◽  
2016 ◽  
Vol 8 (14) ◽  
pp. 7459-7465 ◽  
Author(s):  
Devika Choudhury ◽  
Gopalan Rajaraman ◽  
Shaibal K. Sarkar
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Halide Perovskite ◽  
Organolead Halide

The feasibility of self-saturated atomic layer deposition of Al2O3 on an organolead halide perovskite (MAPbI3−xClx) surface through a well known trimethylaluminium (TMA)–water (H2O) chemistry is studied.

scholarly journals Surface Passivation of Organometal Halide Perovskite by Atomic Layer Deposition: a Mechanism Investigation Enabling Efficient Inverted Planar Solar Cells

2021 ◽  
Author(s):  
Ran Zhao ◽  
Kai Zhang ◽  
Jiahao Zhu ◽  
Shuang Xiao ◽  
Wei Xiong ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
High Efficiency ◽  
Surface Passivation ◽  
Perovskite Solar Cells ◽  
Wide Band ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Halide Perovskite ◽  
Interface Passivation

Interface passivation is of the pivot to achieve high-efficiency organic metal halide perovskite solar cells (PSCs). Atomic layer deposition (ALD) of wide band gap oxides has recently shown great potential...

Atomic Layer Deposition of Electron Selective SnOx and ZnO Films on Mixed Halide Perovskite: Compatibility and Performance

2017 ◽  
Vol 9 (35) ◽  
pp. 29707-29716 ◽  
Author(s):  
Adam Hultqvist ◽  
Kerttu Aitola ◽  
Kári Sveinbjörnsson ◽  
Zahra Saki ◽  
Fredrik Larsson ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Films ◽  
Layer Deposition ◽  
Halide Perovskite ◽  
And Performance

scholarly journals Interfacial Effects of Tin Oxide Atomic Layer Deposition in Metal Halide Perovskite Photovoltaics

2018 ◽  
Vol 8 (23) ◽  
pp. 1800591 ◽  
Author(s):  
Axel F. Palmstrom ◽  
James A. Raiford ◽  
Rohit Prasanna ◽  
Kevin A. Bush ◽  
Melany Sponseller ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Atomic Layer ◽  
Metal Halide ◽  
Interfacial Effects ◽  
Layer Deposition ◽  
Metal Halide Perovskite ◽  
Halide Perovskite

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

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