High-performance InGaZnO thin-film transistor incorporating a HfO2/Er2O3/HfO2stacked gate dielectric
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In this paper, a HfO2/Er2O3/HfO2(HEH) stacked structure was developed as a gate dielectric for amorphous InGaZnO (α-IGZO) thin-film transistor (TFT) applications.
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2019 ◽
Vol 123
(33)
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pp. 20278-20286
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2010 ◽
Vol 13
(8)
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pp. H274
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2013 ◽
Vol 14
(11)
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pp. 2973-2979
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2018 ◽
Vol 215
(5)
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pp. 1700609
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