Role of Electron Donation of TiO2 Gate Interface for Developing Solution-Processed High-Performance One-Volt Metal-Oxide Thin-Film Transistor Using Ion-Conducting Gate Dielectric

2019 ◽  
Vol 123 (33) ◽  
pp. 20278-20286 ◽  
Author(s):  
Anand Sharma ◽  
Nitesh K. Chourasia ◽  
Nila Pal ◽  
Sajal Biring ◽  
Bhola N. Pal
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
High Performance ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film ◽  
Ion Conducting ◽  
Electron Donation

Metal Oxide Thin Film Transistor with Nano Inorganic Gate Dielectric : Material Chemistry, Nanoscience, Solution Processing and Electronics

2021 ◽  
Vol 23 (09) ◽  
pp. 1078-1085
Author(s):  
A. Kanni Raj ◽  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Barium Zirconate ◽  
Operating Voltage ◽  
Metal Oxide Thin Film

Indium Lead Oxide (ILO) based Metal Oxide Thin Film Transistor (MOTFT) is fabricated with Lead Barium Zirconate (PBZ) gate dielectric. PBZ is formed over doped silicon substrate by cheap sol-gel process. Thin film PBZ is analysed with X-ray Diffraction (XRD), Ultra-Violet Visible Spectra (UV-Vis) and Atomic Force Microscope (AFM). IZO is used as bottom gate to contact Thin Film Transistor (TFT). This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent emobility 4.5cm2/V/s, with on/off ratio 5×105 and sub-threshold swing 0.35V/decade.

P-9: High Performance Back Channel Etch Metal Oxide Thin-film Transistor with Double Active Layers

2016 ◽  
Vol 47 (1) ◽  
pp. 1151-1154 ◽  
Author(s):  
Jong-Heon Yang ◽  
Ji Hun Choi ◽  
Jae-Eun Pi ◽  
Hee-Ok Kim ◽  
Eun-Suk Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
High Performance ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Active Layers ◽  
Metal Oxide Thin Film

Ultra-Low Voltage Metal Oxide Thin Film Transistor by Low-Temperature Annealed Solution Processed LiAlO2 Gate Dielectric

2019 ◽  
Vol 16 (1) ◽  
pp. 22-34 ◽  
Author(s):  
Anand Sharma ◽  
Nitesh K. Chourasia ◽  
Vishwas Acharya ◽  
Nila Pal ◽  
Sajal Biring ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film

35.4L: Late-News Paper: Metal-Oxide Thin Film Transistor with High Performance and Good Operation Stability

2011 ◽  
Vol 42 (1) ◽  
pp. 483-485 ◽  
Author(s):  
Gang Yu ◽  
Chan-Long Shieh ◽  
Fatt Foong ◽  
Guangming Wang ◽  
Aaron Kuo ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
High Performance ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Operation Stability ◽  
Metal Oxide Thin Film ◽  
Late News ◽  
Good Operation

Solution-processed Pb0.8Ba0.2ZrO3 as a gate dielectric for low-voltage metal-oxide thin-film transistor

2020 ◽  
Vol 3 (1) ◽  
pp. 57-62 ◽  
Author(s):  
Vishwas Acharya ◽  
Anand Sharma ◽  
Nitesh K. Chourasia ◽  
Bhola N. Pal
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film

Laser annealing of metal oxide thin film transistor

2020 ◽  
Vol 35 (12) ◽  
pp. 1211-1221
Author(s):  
Hong-long NING ◽  
◽  
Yu-xi DENG ◽  
Jian-lang HUANG ◽  
Zi-long LUO ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film

High-sensitivity hybrid PbSe/ITZO thin film-based phototransistor detecting from 2100 nm to 2500 nm near-infrared illumination

2022 ◽  
Author(s):  
Ali Sehpar Shikoh ◽  
Gi Sang Choi ◽  
Sungmin Hong ◽  
Kwang Seob Jeong ◽  
Jaekyun Kim
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
High Performance ◽  
Near Infrared ◽  
Effective Diffusion ◽  
Band Alignment ◽  
Oxide Thin Film ◽  
Photogenerated Carrier ◽  
Channel Layer ◽  
Metal Oxide Thin Film

Abstract We report that high absorption PbSe colloidal quantum dots (QDs) having a peak absorbance beyond 2100 nm were synthesized and incorporated into InSnZnO (ITZO) channel layer-based thin film transistors (TFTs). It was intended that PbSe QDs with proportionally less photocurrent modulation can be remedied by semiconducting and low off-current ITZO-based TFT configuration. Multiple deposition scheme of PbSe QDs on ITZO metal oxide thin film gave rise to nearly linear increase of film thickness with acceptably uniform and smooth surface (less than 10 nm). Hybrid PbSe/ITZO thin film-based phototransistor exhibited the best performance of near infrared (NIR) detection in terms of response time, sensitivity and detectivity as high as 0.38 s, 3.91 and 4.55 × 107 Jones at room temperature, respectively. This is indebted mainly from the effective diffusion of photogenerated carrier from the PbSe surface to ITZO channel layer as well as from the conduction band alignment between them. Therefore, we believe that our hybrid PbSe/ITZO material platform can be widely used to be in favour of incorporation of solution-processed colloidal light absorbing material into the high-performance metal oxide thin film transistor configuration.

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