Probing the correlation between structure, carrier dynamics and defect states of epitaxial GaN film on (112̄0) sapphire grown by rf-molecular beam epitaxy

RSC Advances ◽  
2015 ◽  
Vol 5 (89) ◽  
pp. 73261-73267 ◽  
Author(s):  
T. C. Shibin Krishna ◽  
Neha Aggarwal ◽  
G. Anurag Reddy ◽  
Palak Dugar ◽  
Monu Mishra ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Sapphire Substrate ◽  
Systematic Study ◽  
Molecular Beam ◽  
Carrier Dynamics ◽  
Rf Plasma ◽  
Optical And Electrical Properties ◽  
Defect States ◽  
Gan Film

A systematic study has been performed to correlate structural, optical and electrical properties with defect states in the GaN films grown on a-plane (112̄0) sapphire substrate via rf-plasma molecular beam epitaxy.

scholarly journals Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy

2018 ◽  
Vol 123 (19) ◽  
pp. 195301 ◽  
Author(s):  
Melanie Budde ◽  
Carsten Tschammer ◽  
Philipp Franz ◽  
Johannes Feldl ◽  
Manfred Ramsteiner ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical And Electrical Properties

Optical and electrical properties of rare earth (Yb,Er) doped GaAs grown by molecular beam epitaxy

1994 ◽  
Vol 75 (8) ◽  
pp. 4171-4175 ◽  
Author(s):  
D. Seghier ◽  
T. Benyattou ◽  
A. Kalboussi ◽  
S. Moneger ◽  
G. Marrakchi ◽  
...  
Keyword(s):  
Rare Earth ◽  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical And Electrical Properties ◽  
Er Doped

Optical and electrical properties of Al1−xInxN films grown by plasma source molecular-beam epitaxy

2001 ◽  
Vol 79 (5) ◽  
pp. 632-634 ◽  
Author(s):  
M. J. Lukitsch ◽  
Y. V. Danylyuk ◽  
V. M. Naik ◽  
C. Huang ◽  
G. W. Auner ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Plasma Source ◽  
Optical And Electrical Properties

Molecular-beam epitaxy-grown Si whisker structures: morphological, optical and electrical properties

2008 ◽  
Vol 19 (22) ◽  
pp. 225708 ◽  
Author(s):  
O V Naumova ◽  
Yu V Nastaushev ◽  
S N Svitasheva ◽  
L V Sokolov ◽  
N D Zakharov ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical And Electrical Properties

Properties of Modulation-Doped HgCdTe Superlattices

1989 ◽  
Vol 161 ◽  
Author(s):  
S. Hwang ◽  
Z. Yang ◽  
Y. Lansari ◽  
J.W. Han ◽  
J.W. Cook ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Optical And Electrical Properties ◽  
Mbe Growth ◽  
Quantum Well Structures ◽  
P Type ◽  
Growth Experiments

ABSTRACTPhotoassisted molecular beam epitaxy has been employed to successfully prepare p-type and n-type modulation-doped HgCdTe superlattices. The samples were grown at 170°C. In this paper, we report details of the MBE growth experiments and describe the optical and electrical properties that these new multilayered quantum well structures of HgCdTe possess.

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