postgrowth annealing
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scholarly journals Compositional Phase Change of Early Transition Metal Diselenide (VSe 2 and TiSe 2 ) Ultrathin Films by Postgrowth Annealing

2020 ◽  
Vol 7 (15) ◽  
pp. 2000497
Author(s):  
Manuel Bonilla ◽  
Sadhu Kolekar ◽  
Jiangfeng Li ◽  
Yan Xin ◽  
Paula Mariel Coelho ◽  
...  
Keyword(s):  
Transition Metal ◽  
Phase Change ◽  
Ultrathin Films ◽  
Early Transition Metal ◽  
Postgrowth Annealing ◽  
Early Transition

Effect of Growth Temperature and Postgrowth Annealing on Magnetic Properties of Mn1 + xSb Nanoparticles Embedded in GaSb Thin Films

2020 ◽  
Vol 62 (2) ◽  
pp. 241-245
Author(s):  
A. I. Dmitriev ◽  
A. V. Kochura ◽  
A. P. Kuz’menko ◽  
L. S. Parshina ◽  
O. A. Novodvorskii ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Growth Temperature ◽  
Postgrowth Annealing

scholarly journals Влияние температур роста и постростового отжига на магнитные свойства наночастиц Mn-=SUB=-1+x-=/SUB=-Sb, внедренных в тонкие пленки GaSb

2020 ◽  
Vol 62 (2) ◽  
pp. 203
Author(s):  
А.И. Дмитриев ◽  
А.В. Кочура ◽  
А.П. Кузьменко ◽  
Л.С. Паршина ◽  
О.А. Новодворский ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Two Phase ◽  
Temperature Conditions ◽  
Postgrowth Annealing

The magnetic properties of two-phase granular semiconductor-ferromagnet GaSb–MnSb films obtained by pulsed laser deposition, depending on the temperature conditions of growth and postgrowth annealing, are investigated.

Postgrowth Annealing of MOVPE-Grown Single-Crystal CdTe Epilayers on (211) Si Substrates

2018 ◽  
Vol 65 (8) ◽  
pp. 2325-2328
Author(s):  
M. Niraula ◽  
K. Yasuda ◽  
J. Ozawa ◽  
T. Yamaguchi ◽  
S. Tsubota ◽  
...  
Keyword(s):  
Single Crystal ◽  
Si Substrates ◽  
Postgrowth Annealing ◽  
Grown Single Crystal

scholarly journals Влияние режима отжига на свойства терагерцевой фотопроводящей антенны на основе LT-GaAs

2018 ◽  
Vol 44 (2) ◽  
pp. 11
Author(s):  
С.А. Номоев ◽  
И.С. Васильевский ◽  
А.Н. Виниченко ◽  
К.И. Козловский ◽  
А.А. Чистяков ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Film Surface ◽  
Thz Spectroscopy ◽  
Photoconductive Antennas ◽  
Annealing Temperatures ◽  
Gaas Films ◽  
Postgrowth Annealing ◽  
Optimum Interval ◽  
Reduced Temperature ◽  
Lt Gaas

AbstractLow-temperature gallium arsenide (LT-GaAs) films were grown by the method of molecularbeam epitaxy (MBE) at a reduced temperature (230°C) on GaAs(100) substrates and subjected to postgrowth annealing in various regimes. Photoconductive antennas (PCAs) with flag geometry formed on the film surface were characterized by terahertz (THz) response power at various bias voltages. The method of THz spectroscopy was used to study the characteristics of PCAs based on LT-GaAs films annealed in various regimes and the optimum interval of postgrowth annealing temperatures (670–720°C) was established.

Increase in the efficiency of spin detection based on GaAsSb by applying a longitudinal magnetic field or a postgrowth annealing process

2016 ◽  
Vol 9 (2) ◽  
pp. 021201 ◽  
Author(s):  
Weiyang Qiu ◽  
Bin Zhang ◽  
Yafeng Wang ◽  
Pingping Chen ◽  
Zhanghai Chen ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Longitudinal Magnetic Field ◽  
Annealing Process ◽  
Postgrowth Annealing ◽  
Spin Detection

scholarly journals Influence of high-temperature postgrowth annealing under different ambience on GaN quantum dots grown via Ga droplet epitaxy

2015 ◽  
Vol 5 (7) ◽  
pp. 1598 ◽  
Author(s):  
Zhiqiang Qi ◽  
Senlin Li ◽  
Xuhua Huang ◽  
Shichuang Sun ◽  
Wei Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Temperature ◽  
Droplet Epitaxy ◽  
Postgrowth Annealing
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