Realization of a fast-response flexible ultraviolet photodetector employing a metal–semiconductor–metal structure InGaZnO photodiode

RSC Advances ◽  
2015 ◽  
Vol 5 (107) ◽  
pp. 87993-87997 ◽  
Author(s):  
H. T. Zhou ◽  
L. Li ◽  
H. Y. Chen ◽  
Z. Guo ◽  
S. J. Jiao ◽  
...  
Keyword(s):  
Metal Structure ◽  
Response Speed ◽  
Fast Response ◽  
Ultraviolet Photodetector ◽  
Uv Photodetector ◽  
Metal Semiconductor Metal ◽  
Before And After ◽  
Amorphous Ingazno

A flexible UV photodetector (PD) has been fabricated based on the amorphous InGaZnO film. It shows good photoresponse characteristics before and after bending, and fast response speed compared with the most reported flexible UV PDs.

A flexible ultraviolet photodetector based on single crystalline MoO3 nanosheets

2015 ◽  
Vol 3 (28) ◽  
pp. 7469-7475 ◽  
Author(s):  
Qinghong Zheng ◽  
Jin Huang ◽  
Shilin Cao ◽  
Haili Gao
Keyword(s):  
Response Speed ◽  
Fast Response ◽  
Mechanical Forces ◽  
Ultraviolet Photodetector ◽  
Uv Photodetector ◽  
Single Crystalline ◽  
Spectral Selectivity ◽  
Excellent Stability

A flexible UV photodetector was fabricated based on highly crystalline MoO3 nanosheets. The photodetector exhibits high UV spectral selectivity, excellent stability, fast response speed and is able to bear significant external mechanical forces.

High performance self-powered CuZnS/GaN UV photodetectors with ultrahigh on/off ratio (3 × 108)

2021 ◽  
Vol 9 (14) ◽  
pp. 4799-4807
Author(s):  
Yong Zhang ◽  
Weidong Song
Keyword(s):  
Chemical Bath Deposition ◽  
High Performance ◽  
Response Speed ◽  
Fast Response ◽  
Uv Photodetector ◽  
Uv Photodetectors ◽  
Simple Chemical ◽  
Self Powered

P-CuZnS/n-GaN UV photodetector is prepared by a simple chemical bath deposition, showing excellent self-powered properties, including ultrahigh on/off ratio (3 × 108), fast response speed (0.14/40 ms) and large detectivity of 3 × 1013 Jones.

scholarly journals Enhancing performance of Ag–ZnO–Ag UV photodetector by piezo-phototronic effect

RSC Advances ◽  
2018 ◽  
Vol 8 (28) ◽  
pp. 15290-15296 ◽  
Author(s):  
Xiaotong Zhang ◽  
Yu Qiu ◽  
Dechao Yang ◽  
Bing Li ◽  
Heqiu Zhang ◽  
...  
Keyword(s):  
Polyester Fibre ◽  
Zno Nanowires ◽  
Ultraviolet Photodetector ◽  
Uv Photodetector ◽  
Metal Semiconductor Metal ◽  
Schottky Structure

An ultraviolet photodetector based on a ZnO nanowires with metal–semiconductor–metal Schottky structure was fabricated on a flexible polyester fibre substrate.

scholarly journals High Responsivity in GaN Ultraviolet Photodetector Achieved by Growing on a Periodic Trapezoid Column-Shape Patterned Sapphire Substrate

2016 ◽  
Author(s):  
Kuan-Ting Liu ◽  
Shoou-Jinn Chang ◽  
Sean Wu
Keyword(s):  
Sapphire Substrate ◽  
Chemical Vapor ◽  
Metal Structure ◽  
Threading Dislocation ◽  
Ultraviolet Photodetector ◽  
Patterned Sapphire Substrate ◽  
Metal Semiconductor Metal ◽  
Shape Pattern ◽  
Threading Dislocation Density ◽  
Gan Film

GaN ultraviolet photodetector with metal-semiconductor-metal structure is achieved by growing on a periodic trapezoid column-shape patterned sapphire substrate using metalorganic chemical vapor deposition. Under 5-V reverse bias, the photodetector fabricated on such patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, and a 476 % enhancement in the maximum responsivity as compare with those of the photodetector fabricated on conventional flat sapphire substrate. It is also found that the much larger UV-to-visible rejection ratio and the fact that responsivity drops in a smaller cut-off region are observed from photodetector fabricated by using a periodic trapezoid column-shape patterned sapphire substrate. These phenomena may all be attributed to the reduction of threading dislocation density and the improved quality of GaN film, as well as the internal reflection and/or scattering effect on the interface between GaN film and the periodic trapezoid column-shape pattern of the substrate.

scholarly journals High Responsivity in GaN Ultraviolet Photodetector Achieved by Growing on a Periodic Trapezoid Column-Shape Patterned Sapphire Substrate

2016 ◽  
Author(s):  
Kuan-Ting Liu ◽  
Shoou-Jinn Chang ◽  
Sean Wu
Keyword(s):  
Sapphire Substrate ◽  
Chemical Vapor ◽  
Metal Structure ◽  
Threading Dislocation ◽  
Ultraviolet Photodetector ◽  
Patterned Sapphire Substrate ◽  
Metal Semiconductor Metal ◽  
Shape Pattern ◽  
Threading Dislocation Density ◽  
Gan Film

GaN ultraviolet photodetector with metal-semiconductor-metal structure is achieved by growing on a periodic trapezoid column-shape patterned sapphire substrate using metalorganic chemical vapor deposition. Under 5-V reverse bias, the photodetector fabricated on such patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, and a 476 % enhancement in the maximum responsivity as compare with those of the photodetector fabricated on conventional flat sapphire substrate. It is also found that the much larger UV-to-visible rejection ratio and the fact that responsivity drops in a smaller cut-off region are observed from photodetector fabricated by using a periodic trapezoid column-shape patterned sapphire substrate. These phenomena may all be attributed to the reduction of threading dislocation density and the improved quality of GaN film, as well as the internal reflection and/or scattering effect on the interface between GaN film and the periodic trapezoid column-shape pattern of the substrate.

Photovoltaic Three-Dimensional Diamond UV Photodetector With Low Dark Current and Fast Response Speed Fabricated by Bottom-Up Method

2019 ◽  
Vol 40 (7) ◽  
pp. 1186-1189 ◽  
Author(s):  
Zhangcheng Liu ◽  
Dan Zhao ◽  
Tai Min ◽  
Juan Wang ◽  
Genqiang Chen ◽  
...  
Keyword(s):  
Dark Current ◽  
Three Dimensional ◽  
Response Speed ◽  
Fast Response ◽  
Uv Photodetector ◽  
Bottom Up

Current Characteristics of AlGaN/AlN Ultraviolet Photodetector with Metal-Semiconductor-Metal Structure

2013 ◽  
Vol 300-301 ◽  
pp. 1285-1288
Author(s):  
Li Zen Hsieh ◽  
Jun Yan Chang
Keyword(s):  
Reference Sample ◽  
Schottky Contact ◽  
Chemical Vapor ◽  
Metal Structure ◽  
Organic Chemical ◽  
Ultraviolet Photodetector ◽  
Metal Semiconductor Metal ◽  
Current Characteristics ◽  
Dimensional Electron Gas ◽  
Gan Heterostructure

An AlGaN/AlN ultraviolet photodetector with metal-semiconductor-metal structure is fabricated on n type 4H-SiC substrate, which is conventionally epitaxial by metal-organic chemical vapor deposition (MOCVD). The MSM structure is composed of two interdigitated fingers usually formed by Schottky contact which deposited metal with high work function metal by e-beam metallization and thermal evaporator on high resistance layers. This type of MSM has potential advantages, including ultra low dark current because of its rectifying contacts. The current Characteristics are revealed in this paper. A reference sample of AlGaN/GaN heterostructure with two-dimensional electron gas (2DEG) is also fabricated for comparision.

Fabrication visible-blind ultraviolet photodetector based on ZnS/GaN heterostructure with fast response

2020 ◽  
Vol 10 (5) ◽  
pp. 629-633
Author(s):  
Yong Wang ◽  
Naisen Yu
Keyword(s):  
Magnetron Sputtering ◽  
Low Cost ◽  
Response Speed ◽  
Fast Response ◽  
Ultraviolet Photodetector ◽  
Radio Frequency Magnetron Sputtering ◽  
Uv Detectors ◽  
Heterojunction Structure ◽  
Gan Heterostructure ◽  
Visible Blind

In this paper, visible-blind ultraviolet (UV) detectors based on a ZnS/p-GaN heterojunction structure were fabricated. The heterojunction structure was composed of a ZnS nanostructure deposited on a p-GaN/sapphire substrate. The ZnS nanostructured component was obtained via radio-frequency magnetron sputtering. The device based on this ZnS/p-GaN heterojunction structure showed a reproducible, stable, and fast response speed. Therefore, the results demonstrated that the ZnS/p-GaN heterojunction was successfully fabricated using this relatively low-cost method.

Realization of a self-powered ZnO MSM UV photodetector with high responsivity using an asymmetric pair of Au electrodes

2014 ◽  
Vol 2 (45) ◽  
pp. 9689-9694 ◽  
Author(s):  
Hong-Yu Chen ◽  
Ke-Wei Liu ◽  
Xing Chen ◽  
Zhen-Zhong Zhang ◽  
Ming-Ming Fan ◽  
...  
Keyword(s):  
Metal Structure ◽  
The Other ◽  
Interdigitated Electrode ◽  
Uv Photodetector ◽  
High Responsivity ◽  
Metal Semiconductor Metal ◽  
Self Powered

We demonstrate a novel ZnO self-powered photodetector based on the asymmetric metal-semiconductor-metal structure: one Au interdigitated electrode with wide fingers and the other one with narrow fingers.

GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity

2018 ◽  
Vol 29 (11) ◽  
pp. 8958-8963 ◽  
Author(s):  
Shubhendra Kumar Jain ◽  
Neha Aggarwal ◽  
Shibin Krishna ◽  
Rahul Kumar ◽  
Sudhir Husale ◽  
...  
Keyword(s):  
Metal Structure ◽  
Uv Photodetector ◽  
Metal Semiconductor Metal
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