scholarly journals Enhancing performance of Ag–ZnO–Ag UV photodetector by piezo-phototronic effect

RSC Advances ◽  
2018 ◽  
Vol 8 (28) ◽  
pp. 15290-15296 ◽  
Author(s):  
Xiaotong Zhang ◽  
Yu Qiu ◽  
Dechao Yang ◽  
Bing Li ◽  
Heqiu Zhang ◽  
...  
Keyword(s):  
Polyester Fibre ◽  
Zno Nanowires ◽  
Ultraviolet Photodetector ◽  
Uv Photodetector ◽  
Metal Semiconductor Metal ◽  
Schottky Structure

An ultraviolet photodetector based on a ZnO nanowires with metal–semiconductor–metal Schottky structure was fabricated on a flexible polyester fibre substrate.

Heterogeneous sensors of pressure sensor and ultraviolet photodetector fabricated by vertical 3D stacking as a multi-functional device

RSC Advances ◽  
2016 ◽  
Vol 6 (100) ◽  
pp. 97976-97982 ◽  
Author(s):  
H. T. Hsueh ◽  
L. T. Lai ◽  
Y. M. Juan ◽  
S. W. Huang ◽  
T. C. Cheng ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Zno Nanowires ◽  
Ultraviolet Photodetector ◽  
Single Chip ◽  
Uv Photodetector ◽  
Microelectromechanical System ◽  
Heterogeneous Sensors ◽  
Piezoresistive Pressure Sensor ◽  
3D Stacking

Microelectromechanical system (MEMS) piezoresistive pressure sensor and ZnO nanowires (NWs) ultraviolet (UV) photodetector were 3D integrated into a single chip with a vertically stacked structure.

Realization of a fast-response flexible ultraviolet photodetector employing a metal–semiconductor–metal structure InGaZnO photodiode

RSC Advances ◽  
2015 ◽  
Vol 5 (107) ◽  
pp. 87993-87997 ◽  
Author(s):  
H. T. Zhou ◽  
L. Li ◽  
H. Y. Chen ◽  
Z. Guo ◽  
S. J. Jiao ◽  
...  
Keyword(s):  
Metal Structure ◽  
Response Speed ◽  
Fast Response ◽  
Ultraviolet Photodetector ◽  
Uv Photodetector ◽  
Metal Semiconductor Metal ◽  
Before And After ◽  
Amorphous Ingazno

A flexible UV photodetector (PD) has been fabricated based on the amorphous InGaZnO film. It shows good photoresponse characteristics before and after bending, and fast response speed compared with the most reported flexible UV PDs.

scholarly journals Study on Ultraviolet Photodetector modified by Au Nanoparticles on ZnO Nanowires

2021 ◽  
Vol 1907 (1) ◽  
pp. 012044
Author(s):  
Xiaomiao Fei ◽  
Dayong Jiang ◽  
Nan Wang ◽  
Hongping Zhao ◽  
Meijiao Xing ◽  
...  
Keyword(s):  
Au Nanoparticles ◽  
Zno Nanowires ◽  
Ultraviolet Photodetector

Back-Illuminated GaN Metal-Semiconductor-Metal UV Photodetector with High Internal Gain

2001 ◽  
Vol 40 (Part 2, No. 5B) ◽  
pp. L505-L507 ◽  
Author(s):  
Hao Jiang ◽  
Naoyuki Nakata ◽  
Guang Yuan Zhao ◽  
Hiroyasu Ishikawa ◽  
Chun Lin Shao ◽  
...  
Keyword(s):  
Uv Photodetector ◽  
Internal Gain ◽  
Metal Semiconductor Metal ◽  
Back Illuminated

Synthesis, characterization and UV photodetector application of Sb-doped ZnO nanowires

2020 ◽  
Vol 221 ◽  
pp. 117025 ◽  
Author(s):  
Zhengrong Yao ◽  
Kun Tang ◽  
Yang Xu ◽  
Qianqian Du ◽  
Jing Li ◽  
...  
Keyword(s):  
Zno Nanowires ◽  
Uv Photodetector ◽  
Doped Zno

scholarly journals Influence of trap level on an Al0.6Ga0.4N/Al0.5Ga0.5N metal—semiconductor—metal UV photodetector

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCC26
Author(s):  
Akira Yoshikawa ◽  
Saki Ushida ◽  
Motoaki Iwaya ◽  
Tetsuya Takeuchi ◽  
Satoshi Kamiyama ◽  
...  
Keyword(s):  
Trap Level ◽  
Uv Photodetector ◽  
Metal Semiconductor Metal

scholarly journals Effect of Pt NPs in the film on the performances of ZnO-based metal-semiconductor-metal structured ultraviolet photodetector

2015 ◽  
Vol 64 (6) ◽  
pp. 067802
Author(s):  
Pei Jia-Nan ◽  
Jiang Da-Yong ◽  
Tian Chun-Guang ◽  
Guo Ze-Xuan ◽  
Liu Ru-Sheng ◽  
...  
Keyword(s):  
Ultraviolet Photodetector ◽  
Metal Semiconductor Metal

Responsivity improvement of a packaged ZnMgO solar blind ultraviolet photodetector via a sealing treatment of silica gel

2020 ◽  
Vol 8 (3) ◽  
pp. 1089-1094 ◽  
Author(s):  
Xing Chen ◽  
Liyan Wang ◽  
Kewei Liu ◽  
Zhenzhong Zhang ◽  
Binghui Li ◽  
...  
Keyword(s):  
Silica Gel ◽  
High Performance ◽  
Ultraviolet Photodetector ◽  
Uv Photodetector ◽  
Solar Blind ◽  
Sealing Treatment

A packaged high performance ZnMgO solar-blind UV photodetector is prepared via a silica gel sealing treatment. The responsivity and stability of the device is improved according to this sealing treatment.

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