Enhancement of the thermoelectric properties of MnSb2Se4 through Cu resonant doping

RSC Advances ◽  
2015 ◽  
Vol 5 (120) ◽  
pp. 99065-99073 ◽  
Author(s):  
Shanming Li ◽  
Huaizhou Zhao ◽  
Han Zhang ◽  
Guangkun Ren ◽  
Ning Liu ◽  
...  

We report the synthesis of Cu substituted Mn1−xCuxSb2Se4 and its interesting resonant doping behavior, leading to zT of 0.64 at 773 K for the Mn0.75Cu0.25Sb2Se4. Cu-doped MnSb2Se4 could be considered as a new platform for power generation.

2013 ◽  
Vol 1490 ◽  
pp. 185-190 ◽  
Author(s):  
Tomoyuki Nakamura ◽  
Kazuya Hatakeyama ◽  
Masahiro Minowa ◽  
Youhiko Mito ◽  
Koya Arai ◽  
...  

ABSTRACTThermoelectric power generation has been attracting attention as a technology for waste heat utilization in which thermal energy is directly converted into electric energy. It is well known that layered cobalt oxide compounds such as NaCo2O4 and Ca3Co4O9 have high thermoelectric properties in p-type oxide semiconductors. However, in most cases, the thermoelectric properties in n-type oxide materials are not as high. Therefore, n-type magnesium silicide (Mg2Si) has been studied as an alternative due to its non-toxicity, environmental friendliness, lightweight property, and comparative abundance compared with other TE systems. In this study, we fabricated π-structure thermoelectric power generation devices using p-type NaCo2O4 elements and n-type Mg2Si elements. The p- and n-type sintering bodies were fabricated by spark plasma sintering (SPS). To reduce the resistance at the interface between elements and electrodes, we processed the surface of the elements before fabricating the devices. The end face of a Mg2Si element was covered with Ni by SPS and that of a NaCo2O4 element was coated with Ag by silver paste and soldering.The thermoelectric device consisted of 18 pairs of p-type and n-type legs connected with Ag electrodes. The cross-sectional and thickness dimensions of the p-type elements were 3.0 mm × 5.0 mm × 7.6 mm (t) and those of the n-type elements were 3.0 mm × 3.0 mm × 7.6 mm (t). The open circuit voltage was 1.9 V and the maximum output power was 1.4 W at a heat source temperature of 873 K and a cooling water temperature of 283 K in air.


Author(s):  
Yong Hwan Kim ◽  
Yurian Kim ◽  
Hyun‐Sik Kim ◽  
Soon‐Mok Choi ◽  
Sang‐il Kim ◽  
...  

2020 ◽  
Vol 31 (6) ◽  
pp. 4924-4930 ◽  
Author(s):  
Xi Chen ◽  
Fanggong Cai ◽  
Rong Dong ◽  
Xiaobo Lei ◽  
Runqing Sui ◽  
...  

Energy ◽  
2013 ◽  
Vol 54 ◽  
pp. 139-145 ◽  
Author(s):  
K. Park ◽  
H.K. Hwang ◽  
J.W. Seo ◽  
W.-S. Seo

2012 ◽  
Vol 22 (39) ◽  
pp. 20943 ◽  
Author(s):  
Shanyu Wang ◽  
Gangjian Tan ◽  
Wenjie Xie ◽  
Gang Zheng ◽  
Han Li ◽  
...  

2013 ◽  
Vol 1490 ◽  
pp. 161-166 ◽  
Author(s):  
B. Kucukgok ◽  
Q. He ◽  
A. Carlson ◽  
A. G. Melton ◽  
I. T. Ferguson ◽  
...  

ABSTRACTThermoelectric materials with stable mechanical and chemical properties at high temperature are required for power generation applications. For example, gas temperatures up to 1000°C are normally present in the waste stream of industrial processes and this can be used for electricity generation. There are few semiconductor materials that can operate effectively at these high temperatures. One solution may be the use of wide bandgap materials, and in particular GaN-based materials, which may offer a traditional semiconductor solution for high temperatures thermoelectric power generation. In particular, the ability to both grow GaN-based materials and fabricate them into devices is well understood if their thermoelectric properties are favorable. To investigate the possibility of using III-Nitride and its alloys for thermoelectric applications, we synthesized and characterized room temperature thermoelectric properties of metal organic chemical vapor deposition grown GaN and InGaN with different carrier concentrations and indium compositions. The promising value of Seebeck coefficients and power factors of Si-doped GaN and InGaN indicated that these materials are suitable for thermoelectric applications.


2020 ◽  
Vol 50 (1) ◽  
pp. 551-574 ◽  
Author(s):  
Kelly A. Peterson ◽  
Elayne M. Thomas ◽  
Michael L. Chabinyc

Semiconducting polymers have the potential to be used in thermoelectric devices that are lightweight, flexible, and fabricated using solution processing. Because of the structural and energetic disorder of these polymers, the relationship between their structure and thermoelectric properties is complex. We review how interrelated processing routes and doping methods affect the thermoelectric properties of polymers. The studies highlighted here have led to correlations between thermopower and electrical conductivity that can be described by theories under investigation. With greater understanding of the materials properties behind their performance, semiconducting polymers can be used in future power generation or cooling devices.


2009 ◽  
Vol 1166 ◽  
Author(s):  
Harald Böttner

AbstractA survey of state of the art of the development of high temperature materials is presented and will be discussed in comparison to the situation in the 1990th. An attempt will be made to assess the state of the art of the materials thermoelectric properties, their technical level, and possible potential for standardized device technology. Also a first assessment based on current commodity prices for some important thermoelectric compounds will be made. As a roundup advantages and drawbacks for some classical and upcoming compounds will be given. The main challenges, which will have to be overcome to finally enable thermoelectric power generation as a recycling technology of “nomadic” energy, will be summarized. As a result, thermoelectrics should play an important role in the field of green energies.


Sign in / Sign up

Export Citation Format

Share Document