scholarly journals Self-organization of an optomagnetic CoFe2O4–ZnS nanocomposite: preparation and characterization

2015 ◽  
Vol 3 (16) ◽  
pp. 3935-3945 ◽  
Author(s):  
Ali Amiri Zarandi ◽  
Ali A. Sabbagh Alvani ◽  
Reza Salimi ◽  
Hassan Sameie ◽  
Shima Moosakhani ◽  
...  

We report an advanced method for the self-organization of an optomagnetic nanocomposite composed of both fluorescent ZnS quantum dots and CoFe2O4 magnetic nanoparticles with acceptable saturation magnetization and satisfactory luminescence characteristics.

2014 ◽  
Vol 126 (46) ◽  
pp. 12654-12658 ◽  
Author(s):  
Benjamin Matt ◽  
Kirsten M. Pondman ◽  
Sarah J. Asshoff ◽  
Bennie ten Haken ◽  
Benoit Fleury ◽  
...  

2011 ◽  
Vol 78 (11) ◽  
pp. 699 ◽  
Author(s):  
V. E. Adrianov ◽  
V. G. Maslov ◽  
A. V. Baranov ◽  
A. V. Fedorov ◽  
M. V. Artem’ev

Author(s):  
Dimitri D. Vvedensky

This article describes the self-organized and self-limiting assembly of quantum dots, with particular emphasis on III–V semiconductor quantum dots. It begins with a background on the second industrial revolution, highlighted by advances in information technology and which paved the way for the era of ‘quantum nanostructures’. It then considers the science and technology of quantum dots, followed by a discussion on methods of epitaxial growth and fabrication methodologies of semiconductor quantum dots and other supported nanostructures, including molecular beam epitaxy and metalorganic vapor-phase epitaxy. It also examines self-organization in Stranski–Krastanov systems, site control of quantum dots on patterned substrates, nanophotonics with quantum dots, and arrays of quantum dots.


2014 ◽  
pp. n/a-n/a ◽  
Author(s):  
Benjamin Matt ◽  
Kirsten M. Pondman ◽  
Sarah J. Asshoff ◽  
Bennie ten Haken ◽  
Benoit Fleury ◽  
...  

2000 ◽  
Vol 618 ◽  
Author(s):  
Hanxuan Li ◽  
Theda Daniels-Race ◽  
Mohamed-Ali Hasan

ABSTRACTAtomic force microscopy (AFM) reveals that InAs islands grown on InP (111)A, as they grow in size, undergo a shape transition. Below a critical size of around 30 nm, round-shaped quantum dots form, while above this size they grow in the shape of triangles, reflecting the symmetry of the (111) substrates. The edges of triangular islands are aligned along the three equivalent {110} directions of the InP (111) surface. The triangular islands grow laterally much faster than vertically, indicating the aspect ratio decrease of the islands with increasing InAs coverage. Our results provide a better understanding of the self-organization behaviors of InAs on InP (111)A.


2014 ◽  
Vol 48 (13) ◽  
pp. 1729-1731 ◽  
Author(s):  
S. A. Tarasov ◽  
O. A. Aleksandrova ◽  
A. I. Maksimov ◽  
E. V. Maraeva ◽  
L. B. Matyushkin ◽  
...  

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