Quantum dots: Self-organized and self-limiting assembly

Author(s):  
Dimitri D. Vvedensky

This article describes the self-organized and self-limiting assembly of quantum dots, with particular emphasis on III–V semiconductor quantum dots. It begins with a background on the second industrial revolution, highlighted by advances in information technology and which paved the way for the era of ‘quantum nanostructures’. It then considers the science and technology of quantum dots, followed by a discussion on methods of epitaxial growth and fabrication methodologies of semiconductor quantum dots and other supported nanostructures, including molecular beam epitaxy and metalorganic vapor-phase epitaxy. It also examines self-organization in Stranski–Krastanov systems, site control of quantum dots on patterned substrates, nanophotonics with quantum dots, and arrays of quantum dots.

1999 ◽  
Vol 38 (Part 1, No. 4B) ◽  
pp. 2524-2528 ◽  
Author(s):  
Shinji Kuroda ◽  
Yoshikazu Terai ◽  
Kôki Takita ◽  
Tsuyoshi Okuno ◽  
Yasuaki Masumoto

2014 ◽  
Vol 5 ◽  
pp. 1203-1209 ◽  
Author(s):  
Hind Kadiri ◽  
Serguei Kostcheev ◽  
Daniel Turover ◽  
Rafael Salas-Montiel ◽  
Komla Nomenyo ◽  
...  

Our aim was to elaborate a novel method for fully controllable large-scale nanopatterning. We investigated the influence of the surface topology, i.e., a pre-pattern of hydrogen silsesquioxane (HSQ) posts, on the self-organization of polystyrene beads (PS) dispersed over a large surface. Depending on the post size and spacing, long-range ordering of self-organized polystyrene beads is observed wherein guide posts were used leading to single crystal structure. Topology assisted self-organization has proved to be one of the solutions to obtain large-scale ordering. Besides post size and spacing, the colloidal concentration and the nature of solvent were found to have a significant effect on the self-organization of the PS beads. Scanning electron microscope and associated Fourier transform analysis were used to characterize the morphology of the ordered surfaces. Finally, the production of silicon molds is demonstrated by using the beads as a template for dry etching.


1999 ◽  
Vol 4 (S1) ◽  
pp. 846-851 ◽  
Author(s):  
B. Daudin ◽  
F. Widmann ◽  
J. Simon ◽  
G. Feuillet ◽  
J. L. Rouvière ◽  
...  

It is demonstrated that GaN quantum dots with the wurtzite structure grown by molecular beam epitaxy on AlN exhibit optical properties which, depending on the size of the dots, may be dominated by piezoelectric effects. In "large" quantum dots with an average height and diameter of 4.1 and 17 nm, respectively, the photoluminescence peak is centered at 2.95 eV, nearly 0.5 eV below the bulk GaN bandgap, which is assigned to a piezoelectric field of 5.5 MV/cm present in the dots. The decay time of the photoluminescence was also measured. A comparison is carried out with theoretical calculation of the radiative lifetime.


2005 ◽  
Vol 276 (1-2) ◽  
pp. 72-76 ◽  
Author(s):  
Z.L. Miao ◽  
S.J. Chua ◽  
Y.H. Chye ◽  
P. Chen ◽  
S. Tripathy

1999 ◽  
Vol 197 (1-2) ◽  
pp. 372-375 ◽  
Author(s):  
Haijun Zhu ◽  
Zhiming Wang ◽  
Hui Wang ◽  
Liqiu Cui ◽  
Songlin Feng

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