Efficient silicon quantum dots light emitting diodes with an inverted device structure

2016 ◽  
Vol 4 (4) ◽  
pp. 673-677 ◽  
Author(s):  
Li Yao ◽  
Ting Yu ◽  
Lixiang Ba ◽  
Hu Meng ◽  
Xin Fang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Average Diameter ◽  
Device Structure ◽  
Silicon Quantum Dots ◽  
Inverted Structure ◽  
Light Emitting ◽  
Structure Light ◽  
Inverted Device

SiQDs with an average diameter of 2.6 ± 0.5 nm are used as the light emitting material in high-efficiency inverted structure light emitting diodes.

High‐efficiency quantum dot light‐emitting diodes with blue cadmium‐free quantum dots

2020 ◽  
Vol 28 (5) ◽  
pp. 401-409 ◽  
Author(s):  
Tatsuya Ryowa ◽  
Takeshi Ishida ◽  
Yusuke Sakakibara ◽  
Keisuke Kitano ◽  
Masaya Ueda ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting

All-solution processed inverted green quantum dot light-emitting diodes with concurrent high efficiency and long lifetime

2019 ◽  
Vol 6 (10) ◽  
pp. 2009-2015 ◽  
Author(s):  
Zhiwen Yang ◽  
Qianqian Wu ◽  
Gongli Lin ◽  
Xiaochuan Zhou ◽  
Weijie Wu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Shell Growth ◽  
Solution Processed ◽  
Light Emitting ◽  
Long Lifetime

An all-solution processed inverted green quantum dot-based light-emitting diode with concurrent high efficiency and long lifetime is obtained by precisely controlled double shell growth of quantum dots.

Light-emitting diodes based on colloidal silicon quantum dots

2018 ◽  
Vol 39 (6) ◽  
pp. 061008 ◽  
Author(s):  
Shuangyi Zhao ◽  
Xiangkai Liu ◽  
Xiaodong Pi ◽  
Deren Yang
Keyword(s):  
Quantum Dots ◽  
Light Emitting Diodes ◽  
Silicon Quantum Dots ◽  
Light Emitting

Effects of the Hole Tunneling Barrier Width on the Electrical Characteristic in Silicon Quantum Dots Light-Emitting Diodes

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DG11 ◽  
Author(s):  
Tae-Youb Kim ◽  
Nae-Man Park ◽  
Cheol-Jong Choi ◽  
Chul Huh ◽  
Chang-Geun Ahn ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electrical Characteristic ◽  
Light Emitting Diodes ◽  
Barrier Width ◽  
Tunneling Barrier ◽  
Silicon Quantum Dots ◽  
Light Emitting

scholarly journals Colloidal quantum-dots surface and device structure engineering for high-performance light-emitting diodes

2017 ◽  
Vol 4 (2) ◽  
pp. 170-183 ◽  
Author(s):  
Yuequn Shang ◽  
Zhijun Ning
Keyword(s):  
Quantum Dots ◽  
Surface Engineering ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Emission Peak ◽  
Colloidal Quantum Dots ◽  
Device Structure ◽  
Light Emitting ◽  
Device Architecture ◽  
Architecture Optimization

Abstract The application of colloidal quantum dots for light-emitting devices has attracted considerable attention in recent years, due to their unique optical properties such as size-dependent emission wavelength, sharp emission peak and high luminescent quantum yield. Tremendous efforts have been made to explore quantum dots for light-emission applications such as light-emitting diodes (LEDs) and light converters. The performance of quantum-dots-based light-emitting diodes (QD-LEDs) has been increasing rapidly in recent decades as the development of quantum-dots synthesis, surface-ligand engineering and device-architecture optimization. Recently, the external quantum efficiencies of red quantum-dots LEDs have exceeded 20.5% with good stability and narrow emission peak. In this review, we summarize the recent advances in QD-LEDs, focusing on quantum-dot surface engineering and device-architecture optimization.

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