scholarly journals Surface Engineering of Silicon Quantum Dots: Does the Ligand Length Impact the Optoelectronic Properties of Light‐Emitting Diodes?

2021 ◽  
pp. 2100083
Author(s):  
Josef Mock ◽  
Elisabeth Groß ◽  
Marc Julian Kloberg ◽  
Bernhard Rieger ◽  
Markus Becherer
Keyword(s):  
Quantum Dots ◽  
Surface Engineering ◽  
Light Emitting Diodes ◽  
Optoelectronic Properties ◽  
Silicon Quantum Dots ◽  
Light Emitting

Light-emitting diodes based on colloidal silicon quantum dots

2018 ◽  
Vol 39 (6) ◽  
pp. 061008 ◽  
Author(s):  
Shuangyi Zhao ◽  
Xiangkai Liu ◽  
Xiaodong Pi ◽  
Deren Yang
Keyword(s):  
Quantum Dots ◽  
Light Emitting Diodes ◽  
Silicon Quantum Dots ◽  
Light Emitting

Efficient silicon quantum dots light emitting diodes with an inverted device structure

2016 ◽  
Vol 4 (4) ◽  
pp. 673-677 ◽  
Author(s):  
Li Yao ◽  
Ting Yu ◽  
Lixiang Ba ◽  
Hu Meng ◽  
Xin Fang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Average Diameter ◽  
Device Structure ◽  
Silicon Quantum Dots ◽  
Inverted Structure ◽  
Light Emitting ◽  
Structure Light ◽  
Inverted Device

SiQDs with an average diameter of 2.6 ± 0.5 nm are used as the light emitting material in high-efficiency inverted structure light emitting diodes.

Effects of the Hole Tunneling Barrier Width on the Electrical Characteristic in Silicon Quantum Dots Light-Emitting Diodes

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DG11 ◽  
Author(s):  
Tae-Youb Kim ◽  
Nae-Man Park ◽  
Cheol-Jong Choi ◽  
Chul Huh ◽  
Chang-Geun Ahn ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electrical Characteristic ◽  
Light Emitting Diodes ◽  
Barrier Width ◽  
Tunneling Barrier ◽  
Silicon Quantum Dots ◽  
Light Emitting

scholarly journals Colloidal quantum-dots surface and device structure engineering for high-performance light-emitting diodes

2017 ◽  
Vol 4 (2) ◽  
pp. 170-183 ◽  
Author(s):  
Yuequn Shang ◽  
Zhijun Ning
Keyword(s):  
Quantum Dots ◽  
Surface Engineering ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Emission Peak ◽  
Colloidal Quantum Dots ◽  
Device Structure ◽  
Light Emitting ◽  
Device Architecture ◽  
Architecture Optimization

Abstract The application of colloidal quantum dots for light-emitting devices has attracted considerable attention in recent years, due to their unique optical properties such as size-dependent emission wavelength, sharp emission peak and high luminescent quantum yield. Tremendous efforts have been made to explore quantum dots for light-emission applications such as light-emitting diodes (LEDs) and light converters. The performance of quantum-dots-based light-emitting diodes (QD-LEDs) has been increasing rapidly in recent decades as the development of quantum-dots synthesis, surface-ligand engineering and device-architecture optimization. Recently, the external quantum efficiencies of red quantum-dots LEDs have exceeded 20.5% with good stability and narrow emission peak. In this review, we summarize the recent advances in QD-LEDs, focusing on quantum-dot surface engineering and device-architecture optimization.

Silicon Quantum Dots for Light-Emitting Diodes Extending to the NIR-II Window

2021 ◽  
Author(s):  
Junpei Watanabe ◽  
Hiroyuki Yamada ◽  
Hong-Tao Sun ◽  
Taku Moronaga ◽  
Yasushi Ishii ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Emitting Diodes ◽  
Silicon Quantum Dots ◽  
Light Emitting

Effects of the Hole Tunneling Barrier Width on the Electrical Characteristic in Silicon Quantum Dots Light-Emitting Diodes

2011 ◽  
Vol 50 (4) ◽  
pp. 04DG11 ◽  
Author(s):  
Tae-Youb Kim ◽  
Nae-Man Park ◽  
Cheol-Jong Choi ◽  
Chul Huh ◽  
Chang-Geun Ahn ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electrical Characteristic ◽  
Light Emitting Diodes ◽  
Barrier Width ◽  
Tunneling Barrier ◽  
Silicon Quantum Dots ◽  
Light Emitting

Physics and Device Structures of Highly Efficient Silicon Quantum Dots Based Silicon Nitride Light-Emitting Diodes

2006 ◽  
Vol 12 (6) ◽  
pp. 1545-1555 ◽  
Author(s):  
Gun Yong Sung ◽  
Nae-Man Park ◽  
Jae-Heon Shin ◽  
Kyung-Hyun Kim ◽  
Tae-Youb Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Silicon Nitride ◽  
Light Emitting Diodes ◽  
Silicon Quantum Dots ◽  
Light Emitting ◽  
Highly Efficient ◽  
Device Structures

Organic–inorganic hybrid perovskite quantum dots for light-emitting diodes

2018 ◽  
Vol 6 (18) ◽  
pp. 4831-4841 ◽  
Author(s):  
Wei Deng ◽  
Huan Fang ◽  
Xiangcheng Jin ◽  
Xiujuan Zhang ◽  
Xiaohong Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Narrow Band ◽  
Optoelectronic Properties ◽  
Next Generation ◽  
Inorganic Hybrid ◽  
Light Emitting ◽  
Hybrid Perovskite ◽  
Perovskite Quantum Dots

Organic–inorganic hybrid perovskite (CH3NH3PbX3, X = Cl, Br, or I) quantum dots with superior optoelectronic properties, including bright, colour-tunable, narrow-band photoluminescence and high photoluminescence quantum efficiency, are regarded as ideal materials for next-generation displays.

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