Atomic layer deposition of diisopropylaminosilane on WO3(001) and W(110): a density functional theory study
2016 ◽
Vol 18
(42)
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pp. 29139-29146
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Keyword(s):
The decomposition reaction mechanisms of the Si precursor, diisopropylaminosilane (DIPAS), on W(110) and WO3(001) surfaces are compared using the density functional theory (DFT) method.
2011 ◽
Vol 675-677
◽
pp. 1249-1252
2007 ◽
Vol 803
(1-3)
◽
pp. 23-28
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2009 ◽
Vol 255
(11)
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pp. 5742-5745
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2009 ◽
Vol 255
(16)
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pp. 7136-7141
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