scholarly journals Atomic layer deposition of Al2O3 on MoS2, WS2, WSe2, and h-BN: surface coverage and adsorption energy

RSC Advances ◽  
2017 ◽  
Vol 7 (2) ◽  
pp. 884-889 ◽  
Author(s):  
Taejin Park ◽  
Hoijoon Kim ◽  
Mirine Leem ◽  
Wonsik Ahn ◽  
Seongheum Choi ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Adsorption Energy ◽  
Surface Coverage ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Adsorption Energies ◽  
2D Crystals ◽  
Trimethyl Aluminum

The adsorption energies of trimethyl-aluminum on 2D crystals are extracted by quantifying the surface coverage of Al2O3 grown by atomic layer deposition.

Morphology and crystallinity control of ultrathin TiO2 layers deposited on carbon nanotubes by temperature-step atomic layer deposition

Nanoscale ◽  
2015 ◽  
Vol 7 (24) ◽  
pp. 10622-10633 ◽  
Author(s):  
Carlos Guerra-Nuñez ◽  
Yucheng Zhang ◽  
Meng Li ◽  
Vipin Chawla ◽  
Rolf Erni ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Layer Deposition ◽  
Surface Coverage ◽  
Multiwall Carbon Nanotubes ◽  
Atomic Layer ◽  
Temperature Step ◽  
Surface And Interface ◽  
Layer Deposition ◽  
New Strategy ◽  
Multiwall Carbon

A new strategy to tailor the surface and interface of ultrathin TiO2 coatings deposited by “temperature-step” atomic layer deposition with complete surface coverage of non-functionalized multiwall carbon nanotubes.

Atmospheric Pressure Atomic Layer Deposition of Al2O3 Using Trimethyl Aluminum and Ozone

Langmuir ◽  
2014 ◽  
Vol 30 (13) ◽  
pp. 3741-3748 ◽  
Author(s):  
Moataz Bellah M. Mousa ◽  
Christopher J. Oldham ◽  
Gregory N. Parsons
Keyword(s):  
Atomic Layer Deposition ◽  
Atmospheric Pressure ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Trimethyl Aluminum

Effect on Al:MO2/In0.53Ga0.47As interface (M=Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition

2014 ◽  
Vol 563 ◽  
pp. 44-49
Author(s):  
A. Lamperti ◽  
A. Molle ◽  
E. Cianci ◽  
C. Wiemer ◽  
S. Spiga ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Pre Treatment ◽  
Trimethyl Aluminum

Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al2O3on InAs

2010 ◽  
Vol 49 (11) ◽  
pp. 111201 ◽  
Author(s):  
Hai-Dang Trinh ◽  
Edward Yi Chang ◽  
Yuen-Yee Wong ◽  
Chih-Chieh Yu ◽  
Chia-Yuan Chang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Interface Properties ◽  
Layer Deposition ◽  
Wet Chemical ◽  
Trimethyl Aluminum

Initial Surface Reactions Mechanisms of Atomic Layer Deposition TiO2 on H/Si(100)-2×1 Surface

2013 ◽  
Vol 750-752 ◽  
pp. 1052-1056 ◽  
Author(s):  
Guang Fen Zhou ◽  
Jie Ren ◽  
Shao Wen Zhang
Keyword(s):  
Density Functional Theory ◽  
Atomic Layer Deposition ◽  
Adsorption Energy ◽  
Reaction Mechanisms ◽  
Density Functional ◽  
Surface Reaction ◽  
Atomic Layer ◽  
Initial Surface ◽  
Functional Theory ◽  
Layer Deposition

The initial surface reaction mechanisms of atomic layer deposition TiO2on H/Si (100 )-2×1 surface using Ti (OCH3)4and H2O as precursors are investigated by density functional theory. The ALD process is divided into two half-reactions, i.e., Ti (OCH3)4and H2O half-reactions. The adsorption energy of Ti (OCH3)4on H/Si (100)2×1 surface is only-2.4 kJ/mol. The overall reaction of Ti (OCH3)4is exothermic, which indicates that Ti (OCH3)4half-reactions are favorable on thermodynamic. Howerver, H2O half-reactions are endothermic and thermodynamically unfavorable.

Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia

2004 ◽  
Vol 811 ◽  
Author(s):  
Xinye Liu ◽  
Sasangan Ramanathan ◽  
Eddie Lee ◽  
Thomas E. Seidel
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Aluminum Nitride ◽  
Deposition Rate ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Layer Deposition ◽  
Glancing Angle ◽  
Trimethyl Aluminum

AbstractAluminum nitride (AlN) thin films were deposited from trimethyl aluminum (TMA) and Ammonia (NH3) by thermal atomic layer deposition (thermal ALD) and plasma enhanced atomic layer deposition (PEALD) on 200 mm silicon wafers. For both thermal ALD and PEALD, the deposition rate increased significantly with the deposition temperature. The deposition rate did not fully saturate even with 10 seconds of NH3 pulse time. Plasma significantly increased the deposition rate of AlN films. A large number of incubation cycles were needed to deposit AlN films on Si wafers. 100% step coverage was achieved on trenches with aspect ratio of 35:1 at 100 nm feature size by thermal ALD. X-ray diffraction (XRD) data showed that the AlN films deposited from 370 °C to 470 °C were polycrystalline. Glancing angle X-ray reflection (XRR) results showed that the RMS roughness of the films increased as the film thickness increased.

Trimethyl-aluminum and ozone interactions with graphite in atomic layer deposition of Al2O3

2012 ◽  
Vol 112 (10) ◽  
pp. 104110 ◽  
Author(s):  
Stephen McDonnell ◽  
Adam Pirkle ◽  
Jiyoung Kim ◽  
Luigi Colombo ◽  
Robert M. Wallace
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Trimethyl Aluminum

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition
Sign in / Sign up

Export Citation Format

Share Document