Defect induced p-type conductivity in zinc oxide at high temperature: electron paramagnetic resonance spectroscopy

Nanoscale ◽  
2017 ◽  
Vol 9 (31) ◽  
pp. 10983-10986 ◽  
Author(s):  
Emre Erdem
Keyword(s):  
Surface Defects ◽  
Electron Paramagnetic Resonance Spectroscopy ◽  
Resonance Spectroscopy ◽  
Paramagnetic Resonance ◽  
Type Conductivity ◽  
Zno Nanocrystals ◽  
Defect Centers ◽  
Temperature Electron ◽  
P Type ◽  
Electron Paramagnetic

It has been observed that the defect centers on the surface play a crucial role in the conductivity behavior of ZnO. Above 300 °C only surface defects can be visible in EPR spectra for ZnO nanocrystals which indicate p-type conductivity.

Activation of Mg acceptors in GaN:Mg monitored by electron paramagnetic resonance spectroscopy.

2002 ◽  
Vol 743 ◽  
Author(s):  
D. Matlock ◽  
M. E. Zvanut ◽  
Jeffrey R. DiMaio ◽  
R. F. Davis ◽  
R. L. Henry ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Chemical Process ◽  
Electron Paramagnetic Resonance Spectroscopy ◽  
Resonance Spectroscopy ◽  
Paramagnetic Resonance ◽  
Epr Signal ◽  
P Type ◽  
Electron Paramagnetic ◽  
Deposited Films ◽  
Mg Doped

ABSTRACTHydrogen removal from Mg-doped GaN is necessary to activate p-type conductivity, but the exact chemical process is not yet clear. We have investigated this issue by monitoring the intensity of an electron paramagnetic resonance (EPR) signal attributed to Mg through a series of isochronal and isothermal anneals between 600 and 1000 °C. Measurements made on GaN:Mg epitaxial layers deposited on SiC and annealed between 700 and 850 °C indicate that the Mg-related EPR signal increases with temperature as expected for depassivation of a Mg complex by removal of hydrogen. However, data obtained outside this temperature range suggest that additional processes may occur. For example, as-deposited films contain a signal resembling the Mg acceptor that is quenched by a 650 °C N2 anneal. Also, for all samples, N2 annealing at T>850 °C irreversibly decreases the signal thought to be due to Mg. Although the presence of the signal in the as-grown films is not fully understood, the effects observed at T>850 °C may be attributed to preferential N-desorption from Mg-N-H complexes.

Intrinsic Surface Defects on 4H SiC Substrates

2010 ◽  
Vol 1246 ◽  
Author(s):  
Mary Ellen Zvanut ◽  
Sarah Thomas ◽  
Jamiyanaa Dashdorj
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Point Defect ◽  
Surface Defects ◽  
Electron Paramagnetic Resonance Spectroscopy ◽  
Resonance Spectroscopy ◽  
Paramagnetic Resonance ◽  
Carbon Bond ◽  
Electron Paramagnetic ◽  
Insulating Substrates

AbstractWe have investigated a point defect, common to all SiC substrates, that is thought to be a broken carbon bond. Electron paramagnetic resonance spectroscopy performed in combination with three different etching methods using p-type, n-type, and semi-insulating substrates demonstrate that the center lies near the surface of a wafer. The results suggest that on the order of 1013 cm-2 defects are removed within the first micron of the surface of a wafer.

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