scholarly journals Spin-polarized charge trapping cell based on a topological insulator quantum dot

RSC Advances ◽  
2017 ◽  
Vol 7 (49) ◽  
pp. 30963-30969 ◽  
Author(s):  
Zhenhua Wu ◽  
Liangzhong Lin ◽  
Wen Yang ◽  
D. Zhang ◽  
C. Shen ◽  
...  

We demonstrate theoretically that a topological insulator quantum dot can be formed via double topological insulator constrictions (TICs), and can be used as a charge and/or spin carrier trap memory element.

2020 ◽  
Vol 117 (26) ◽  
pp. 262401
Author(s):  
N. Meyer ◽  
K. Geishendorf ◽  
J. Walowski ◽  
A. Thomas ◽  
M. Münzenberg

2014 ◽  
Vol 2 (21) ◽  
pp. 4233-4238 ◽  
Author(s):  
Jiaqing Zhuang ◽  
Su-Ting Han ◽  
Ye Zhou ◽  
V. A. L. Roy

Hafnium dioxide (HfO2) film prepared by the sol–gel technique has been used as a charge trapping layer in organic flash memory.


2010 ◽  
Vol 96 (10) ◽  
pp. 101105 ◽  
Author(s):  
Pallab Bhattacharya ◽  
Ayan Das ◽  
Debashish Basu ◽  
Wei Guo ◽  
Junseok Heo

2015 ◽  
Vol 91 (24) ◽  
Author(s):  
Morten P. Bakker ◽  
Thomas Ruytenberg ◽  
Wolfgang Löffler ◽  
Ajit Barve ◽  
Larry Coldren ◽  
...  
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