Spin-polarized charge trapping cell based on a topological insulator quantum dot
Keyword(s):
We demonstrate theoretically that a topological insulator quantum dot can be formed via double topological insulator constrictions (TICs), and can be used as a charge and/or spin carrier trap memory element.
2016 ◽
Vol 123
(6)
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pp. 1043-1059
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2021 ◽
Vol 113
(11-12(6))
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pp. 727-728
2013 ◽
Vol 49
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pp. 5-12
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