scholarly journals Spin-polarized charge trapping cell based on a topological insulator quantum dot

RSC Advances ◽  
2017 ◽  
Vol 7 (49) ◽  
pp. 30963-30969 ◽  
Author(s):  
Zhenhua Wu ◽  
Liangzhong Lin ◽  
Wen Yang ◽  
D. Zhang ◽  
C. Shen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Topological Insulator ◽  
Charge Trapping ◽  
Memory Element ◽  
Spin Polarized ◽  
Spin Carrier ◽  
Carrier Trap ◽  
A Charge

We demonstrate theoretically that a topological insulator quantum dot can be formed via double topological insulator constrictions (TICs), and can be used as a charge and/or spin carrier trap memory element.

scholarly journals Regular and irregular dynamics of spin-polarized wavepackets in a mesoscopic quantum dot at the edge of topological insulator

2016 ◽  
Vol 123 (6) ◽  
pp. 1043-1059 ◽  
Author(s):  
D. V. Khomitsky ◽  
A. A. Chubanov ◽  
A. A. Konakov
Keyword(s):  
Quantum Dot ◽  
Topological Insulator ◽  
Spin Polarized

Photomultiplication‐Type Organic Photodetectors with Fast Response Enabled by the Controlled Charge Trapping Dynamics of Quantum Dot Interlayer

2021 ◽  
pp. 2102087
Author(s):  
Se Gyo Han ◽  
Hansol Lee ◽  
Wookjin Choi ◽  
Dongki Lee ◽  
Seunghyun Kim ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Charge Trapping ◽  
Fast Response ◽  
Organic Photodetectors

scholarly journals The impact of metallic contacts on spin-polarized photocurrents in topological insulator Bi 2 Se 3 nanowires

2020 ◽  
Vol 117 (26) ◽  
pp. 262401
Author(s):  
N. Meyer ◽  
K. Geishendorf ◽  
J. Walowski ◽  
A. Thomas ◽  
M. Münzenberg
Keyword(s):  
Topological Insulator ◽  
Metallic Contacts ◽  
Spin Polarized ◽  
The Impact

scholarly journals Spin-polarized quantum transport through aT-shape quantum dot-array: Model of spin splitter

2006 ◽  
Vol 74 (14) ◽  
Author(s):  
Rui Wang ◽  
J.-Q. Liang
Keyword(s):  
Quantum Dot ◽  
Quantum Transport ◽  
Spin Polarized

Flash memory based on solution processed hafnium dioxide charge trapping layer

2014 ◽  
Vol 2 (21) ◽  
pp. 4233-4238 ◽  
Author(s):  
Jiaqing Zhuang ◽  
Su-Ting Han ◽  
Ye Zhou ◽  
V. A. L. Roy
Keyword(s):  
Flash Memory ◽  
Sol Gel ◽  
Charge Trapping ◽  
Hafnium Dioxide ◽  
Solution Processed ◽  
Gel Technique ◽  
A Charge

Hafnium dioxide (HfO2) film prepared by the sol–gel technique has been used as a charge trapping layer in organic flash memory.

An electrically injected quantum dot spin polarized single photon source

2010 ◽  
Vol 96 (10) ◽  
pp. 101105 ◽  
Author(s):  
Pallab Bhattacharya ◽  
Ayan Das ◽  
Debashish Basu ◽  
Wei Guo ◽  
Junseok Heo
Keyword(s):  
Quantum Dot ◽  
Single Photon ◽  
Single Photon Source ◽  
Spin Polarized ◽  
Photon Source

Temperature-controllable spin-polarized current and spin polarization in a Rashba three-terminal double-quantum-dot device

2013 ◽  
Vol 22 (5) ◽  
pp. 057306
Author(s):  
Xue-Kun Hong ◽  
Xi-Feng Yang ◽  
Jin-Fu Feng ◽  
Yu-Shen Liu
Keyword(s):  
Quantum Dot ◽  
Spin Polarization ◽  
Double Quantum ◽  
Double Quantum Dot ◽  
Spin Polarized

scholarly journals Quantum dot nonlinearity through cavity-enhanced feedback with a charge memory

2015 ◽  
Vol 91 (24) ◽  
Author(s):  
Morten P. Bakker ◽  
Thomas Ruytenberg ◽  
Wolfgang Löffler ◽  
Ajit Barve ◽  
Larry Coldren ◽  
...  
Keyword(s):  
Quantum Dot ◽  
A Charge
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