Flash memory based on solution processed hafnium dioxide charge trapping layer

2014 ◽  
Vol 2 (21) ◽  
pp. 4233-4238 ◽  
Author(s):  
Jiaqing Zhuang ◽  
Su-Ting Han ◽  
Ye Zhou ◽  
V. A. L. Roy
Keyword(s):  
Flash Memory ◽  
Sol Gel ◽  
Charge Trapping ◽  
Hafnium Dioxide ◽  
Solution Processed ◽  
Gel Technique ◽  
A Charge

Hafnium dioxide (HfO2) film prepared by the sol–gel technique has been used as a charge trapping layer in organic flash memory.

SONOS-type flash memory using an HfO/sub 2/ as a charge trapping layer deposited by the sol-gel spin-coating method

2006 ◽  
Vol 27 (8) ◽  
pp. 653-655 ◽  
Author(s):  
Hsin-Chiang You ◽  
Tze-Hsiang Hsu ◽  
Fu-Hsiang Ko ◽  
Jiang-Wen Huang ◽  
Wen-Luh Yang ◽  
...  
Keyword(s):  
Flash Memory ◽  
Spin Coating ◽  
Sol Gel ◽  
Charge Trapping ◽  
Spin Coating Method ◽  
Coating Method ◽  
A Charge

scholarly journals Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
W. J. Liu ◽  
L. Chen ◽  
P. Zhou ◽  
Q. Q. Sun ◽  
H. L. Lu ◽  
...  
Keyword(s):  
Flash Memory ◽  
Room Temperature ◽  
Metal Layer ◽  
Chemical Vapor ◽  
Charge Trapping ◽  
Memory Device ◽  
Water Molecules ◽  
Oh Groups ◽  
Chemical Vapor Deposited ◽  
A Charge

We demonstrated a flash memory device with chemical-vapor-deposited graphene as a charge trapping layer. It was found that the average RMS roughness of block oxide on graphene storage layer can be significantly reduced from 5.9 nm to 0.5 nm by inserting a seed metal layer, which was verified by AFM measurements. The memory window is 5.6 V for a dual sweep of ±12 V at room temperature. Moreover, a reduced hysteresis at the low temperature was observed, indicative of water molecules or −OH groups between graphene and dielectric playing an important role in memory windows.

High-speed and low-voltage performance in a charge-trapping flash memory using a NiO tunnel junction

2011 ◽  
Vol 44 (15) ◽  
pp. 155105 ◽  
Author(s):  
Yujeong Seo ◽  
Ho-Myoung An ◽  
Hee-Dong Kim ◽  
In Rok Hwang ◽  
Sa Hwan Hong ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Flash Memory ◽  
High Speed ◽  
Low Voltage ◽  
Charge Trapping ◽  
Voltage Performance ◽  
A Charge

scholarly journals Retention Enhancement in Low Power NOR Flash Array with High-κ–Based Charge-Trapping Memory by Utilizing High Permittivity and High Bandgap of Aluminum Oxide

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 328
Author(s):  
Young Suh Song ◽  
Byung-Gook Park
Keyword(s):  
Aluminum Oxide ◽  
Flash Memory ◽  
Computer Aided Design ◽  
Charge Trapping ◽  
Device Structure ◽  
Retention Characteristics ◽  
Charge Trapping Memory ◽  
A Charge ◽  
Aided Design ◽  
Nor Flash

For improving retention characteristics in the NOR flash array, aluminum oxide (Al2O3, alumina) is utilized and incorporated as a tunneling layer. The proposed tunneling layers consist of SiO2/Al2O3/SiO2, which take advantage of higher permittivity and higher bandgap of Al2O3 compared to SiO2 and silicon nitride (Si3N4). By adopting the proposed tunneling layers in the NOR flash array, the threshold voltage window after 10 years from programming and erasing (P/E) was improved from 0.57 V to 4.57 V. In order to validate our proposed device structure, it is compared to another stacked-engineered structure with SiO2/Si3N4/SiO2 tunneling layers through technology computer-aided design (TCAD) simulation. In addition, to verify that our proposed structure is suitable for NOR flash array, disturbance issues are also carefully investigated. As a result, it has been demonstrated that the proposed structure can be successfully applied in NOR flash memory with significant retention improvement. Consequently, the possibility of utilizing HfO2 as a charge-trapping layer in NOR flash application is opened.

PolySi-SiO[sub 2]-ZrO[sub 2]-SiO[sub 2]-Si Flash Memory Incorporating a Sol-Gel-Derived ZrO[sub 2] Charge Trapping Layer

2006 ◽  
Vol 153 (11) ◽  
pp. G934 ◽  
Author(s):  
Tzu-Hsiang Hsu ◽  
Hsin-Chiang You ◽  
Fu-Hsiang Ko ◽  
Tan-Fu Lei
Keyword(s):  
Flash Memory ◽  
Sol Gel ◽  
Charge Trapping

Preparation and Deposition of Hydroxyapatite on Biomaterials by Sol-Gel Technique-A Review

2013 ◽  
Vol 1 (2) ◽  
pp. 59-69 ◽  
Author(s):  
Sarbjit Kaur ◽  
Niraj Bala ◽  
Charu Khosla
Keyword(s):  
Sol Gel ◽  
Gel Technique

Sol - Gel Technique Applied for Biomaterials Achievement

2011 ◽  
Vol 4 (3) ◽  
pp. 224-237 ◽  
Author(s):  
Aurica P. Chiriac ◽  
Loredana E. Nita ◽  
Iordana Neamtu ◽  
Manuela T. Nistor
Keyword(s):  
Sol Gel ◽  
Gel Technique
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