Organic thin films with charge-carrier mobility exceeding that of single crystals

2017 ◽  
Vol 5 (39) ◽  
pp. 10313-10319 ◽  
Author(s):  
Zachary A. Lamport ◽  
Ruipeng Li ◽  
Chao Wang ◽  
William Mitchell ◽  
David Sparrowe ◽  
...  

Through processing, spin-cast OTFTs outperform single-crystal OFETs by making accessible the high-mobility direction in the same crystal structure.

2019 ◽  
Vol 7 (43) ◽  
pp. 13493-13501 ◽  
Author(s):  
Katelyn P. Goetz ◽  
Kohei Sekine ◽  
Fabian Paulus ◽  
Yu Zhong ◽  
Daniel Roth ◽  
...  

The solubilizing side-groups of solution-processable π-conjugated organic semiconductors affect both the crystal structure and microstructure of the respective thin films and thus charge-carrier mobility in devices.


Author(s):  
Sébastien Leroy ◽  
Redouane Douali ◽  
Christian Legrand ◽  
Freddy Krasinski ◽  
Florent Blanchard ◽  
...  

2019 ◽  
Vol 11 (23) ◽  
pp. 20838-20844 ◽  
Author(s):  
Alexander Biewald ◽  
Nadja Giesbrecht ◽  
Thomas Bein ◽  
Pablo Docampo ◽  
Achim Hartschuh ◽  
...  

2019 ◽  
Vol 68 (6) ◽  
pp. 1204-1207 ◽  
Author(s):  
A. E. Alexandrov ◽  
A. R. Tameev ◽  
A. S. Steparuk ◽  
R. A. Irgashev ◽  
G. L. Rusinov

1967 ◽  
Vol 40 (9) ◽  
pp. 2073-2077 ◽  
Author(s):  
Yusei Maruyama ◽  
Hiroo Inokuchi

2012 ◽  
Vol 101 (22) ◽  
pp. 222102 ◽  
Author(s):  
Ajay Singh ◽  
Arvind Kumar ◽  
Ashwini Kumar ◽  
Soumen Samanta ◽  
Anil K. Debnath ◽  
...  

2007 ◽  
Vol 90 (21) ◽  
pp. 213512 ◽  
Author(s):  
Th. B. Singh ◽  
N. S. Sariciftci ◽  
H. Yang ◽  
L. Yang ◽  
B. Plochberger ◽  
...  

2013 ◽  
Vol 113 (17) ◽  
pp. 173706 ◽  
Author(s):  
Hendrik Jansen ◽  
Daniel Dobos ◽  
Thomas Eisel ◽  
Heinz Pernegger ◽  
Vladimir Eremin ◽  
...  

2008 ◽  
Vol 1066 ◽  
Author(s):  
Kah Yoong Chan ◽  
Dietmar Knipp ◽  
Reinhard Carius ◽  
Helmut Stiebig

ABSTRACTThe influence of the crystalline volume fraction of hydrogenated microcrystalline silicon (mc-Si:H) on the performance of thin-film transistors (TFTs) processed at temperatures below 180 °C was investigated. TFTs employing mc-Si:H channel material prepared near the transition to amorphous growth exhibit the highest electron charge carrier mobilities exceeding 50 cm2/Vs. The influence of the crystalline volume fraction of the intrinsic mc-Si:H material on the transistor parameters like the charge carrier mobility and the contact resistance will be discussed.


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