Performance enhancement of a ZnMgO film UV photodetector by HF solution treatment

2017 ◽  
Vol 5 (40) ◽  
pp. 10645-10651 ◽  
Author(s):  
Xing Chen ◽  
Kewei Liu ◽  
Xiao Wang ◽  
Binghui Li ◽  
Zhenzhong Zhang ◽  
...  
Keyword(s):  
Performance Enhancement ◽  
Solution Treatment ◽  
Oxygen Adsorption ◽  
Adsorption Ability ◽  
Uv Photodetector ◽  
Uv Photodetectors

The performance of the ZnMgO UV photodetectors can be improved by HF solution treatment. This improvement is associated with the enhancement of the oxygen adsorption ability on the surface of ZnMgO films.

High performance self-powered CuZnS/GaN UV photodetectors with ultrahigh on/off ratio (3 × 108)

2021 ◽  
Vol 9 (14) ◽  
pp. 4799-4807
Author(s):  
Yong Zhang ◽  
Weidong Song
Keyword(s):  
Chemical Bath Deposition ◽  
High Performance ◽  
Response Speed ◽  
Fast Response ◽  
Uv Photodetector ◽  
Uv Photodetectors ◽  
Simple Chemical ◽  
Self Powered

P-CuZnS/n-GaN UV photodetector is prepared by a simple chemical bath deposition, showing excellent self-powered properties, including ultrahigh on/off ratio (3 × 108), fast response speed (0.14/40 ms) and large detectivity of 3 × 1013 Jones.

Performance enhancement of p-Si/n-ZnGa2O4 heterojunction solar-blind UV photodetector through interface engineering

2021 ◽  
Author(s):  
Dongyang Han ◽  
Ke-Wei Liu ◽  
Jialin Yang ◽  
Xing Chen ◽  
Binghui Li ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Performance Enhancement ◽  
Interface Engineering ◽  
Uv Photodetector ◽  
Solar Blind

Interface engineering is an effective way to improve the performance of heterojunction photodetectors (PDs). We have constructed the p-Si/n-ZnGa2O4 heterojunction solar-blind ultraviolet (UV) PDs with and without SiO2 interfacial layer...

Study the Effect of the Volumetric Ratio of Alq3 on the Optical and Structural Properties of the Alq3:NPD Blend for the UV Photodetector Applications

2021 ◽  
Vol 16 (2) ◽  
pp. 281-287
Author(s):  
Alaa Y. Mahmoud
Keyword(s):  
Structural Properties ◽  
Active Layer ◽  
Energy Gap ◽  
Optical Energy Gap ◽  
Uv Photodetector ◽  
Optical Energy ◽  
Uv Photodetectors ◽  
Energy Bandgap ◽  
Xrd Patterns ◽  
Optical Energy Bandgap

The effect of the volumetric ratio of the tris(8-hydroxyquinoline) aluminum (Alq3) on its blend with the N,N'-Di [(1-naphthyl)-N,N'-diphenyl]-(1,1'-biphenyl)-4,4'-diamine (NPD) (Alq3:NPD) is investigated and optimized for the UV photodetectors fabrication. The optical and structural properties of Alq3:NPD blend with different volumetric ratios 1:1, 2:1, and 3:1 is studied in the context of the absorbance, transmittance, optical energy gap and XRD patterns. Results show that the absorbance is increased by 11% at A = 260 nm with the increase in the volumetric ratio. In contrast, the optical energy bandgap that is extrapolated from the Tauc’s plot is decreased with the increase in the volumetric ratio, and the 2:1 ratio shows the lowest energy in the UV region. In terms of the XRD investigation, the 2:1 volumetric ratio shows the highest intensity for the crystallinity peak at 36.6°. The fabricated photodetector with a different volumetric ratio of the active layer Alq3:NPD blend shows the best performance with the ratio 2:1.

High-performance ZnO/Ag Nanowire/ZnO composite film UV photodetectors with large area and low operating voltage

2014 ◽  
Vol 2 (21) ◽  
pp. 4312-4319 ◽  
Author(s):  
Zhi Yang ◽  
Minqiang Wang ◽  
Xiaohui Song ◽  
Guodong Yan ◽  
Yucheng Ding ◽  
...  
Keyword(s):  
Composite Film ◽  
High Performance ◽  
Operating Voltage ◽  
Large Area ◽  
Uv Photodetector ◽  
Uv Photodetectors ◽  
Nanowire Network ◽  
Ag Nanowires ◽  
Ag Nanowire

We have demonstrated that the embedded Ag nanowire network plays the important role of greatly improving responsivity and shortening response time in ZnO/Ag nanowires/ZnO composite uv photodetector.

Quenching of Persistent Photocurrent in Oxide UV Photodetector

2021 ◽  
Author(s):  
Baoshi Qiao ◽  
Zhenzhong Zhang ◽  
Xiu-Hua Xie ◽  
Binghui Li ◽  
Xing Chen ◽  
...  
Keyword(s):  
Response Speed ◽  
Light Signal ◽  
Slow Response ◽  
Uv Photodetector ◽  
Uv Photodetectors ◽  
Photoconductive Gain ◽  
Noise Current ◽  
Highly Sensitive ◽  
Weak Light ◽  
Key Parameter

The sensitivity to weak light signal is a key parameter for UV photodetectors. However, highly sensitive device has to suffer slow response speed (with photoconductive gain) or large noise current...

Shottky Contact Device Based on a Single WO3 Nanowire for Ultraviolet Photodetector

2014 ◽  
Vol 556-562 ◽  
pp. 2097-2100 ◽  
Author(s):  
Jun Hua Wan ◽  
Kai Huang ◽  
Li Wan
Keyword(s):  
Schottky Contact ◽  
Oxygen Adsorption ◽  
Contact Device ◽  
Ultraviolet Photodetector ◽  
Junction Region ◽  
Uv Photodetector ◽  
Fall Time ◽  
Uv Illumination ◽  
Contact Devices ◽  
Schottky Device

To distinguish the ultraviolet (UV) photoresponse of Ohmic and Schottky contact devices, we have fabricated symmetrical and nonsymmetrical devices by standard lithography based on a single WO3 nanowire. For the Ohmic contact device, the photocurrent can change from 100 nA to 300 nA. Even 200 s under UV illumination, nonsaturated photocurrent can be observed, and the fall time is more than 1000 s. But for the Schottky contact device, the rise and fall time are faster than that of Ohmic device. The barrier height of Schottky device can be easily controlled through the oxygen adsorption and desorption on the junction region, which can be served as a ‘‘gate’’ that effectively tunes the conductance of the device. Therefore, the Schottky barrier plays a very important role in the rapid-response of UV photodetector.

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