High-performance ZnO/Ag Nanowire/ZnO composite film UV photodetectors with large area and low operating voltage

2014 ◽  
Vol 2 (21) ◽  
pp. 4312-4319 ◽  
Author(s):  
Zhi Yang ◽  
Minqiang Wang ◽  
Xiaohui Song ◽  
Guodong Yan ◽  
Yucheng Ding ◽  
...  
Keyword(s):  
Composite Film ◽  
High Performance ◽  
Operating Voltage ◽  
Large Area ◽  
Uv Photodetector ◽  
Uv Photodetectors ◽  
Nanowire Network ◽  
Ag Nanowires ◽  
Ag Nanowire

We have demonstrated that the embedded Ag nanowire network plays the important role of greatly improving responsivity and shortening response time in ZnO/Ag nanowires/ZnO composite uv photodetector.

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

High performance self-powered CuZnS/GaN UV photodetectors with ultrahigh on/off ratio (3 × 108)

2021 ◽  
Vol 9 (14) ◽  
pp. 4799-4807
Author(s):  
Yong Zhang ◽  
Weidong Song
Keyword(s):  
Chemical Bath Deposition ◽  
High Performance ◽  
Response Speed ◽  
Fast Response ◽  
Uv Photodetector ◽  
Uv Photodetectors ◽  
Simple Chemical ◽  
Self Powered

P-CuZnS/n-GaN UV photodetector is prepared by a simple chemical bath deposition, showing excellent self-powered properties, including ultrahigh on/off ratio (3 × 108), fast response speed (0.14/40 ms) and large detectivity of 3 × 1013 Jones.

Efficiency enhancement of TiO2self-powered UV photodetectors using a transparent Ag nanowire electrode

2018 ◽  
Vol 6 (13) ◽  
pp. 3334-3340 ◽  
Author(s):  
Jinzhuo Xu ◽  
Wei Yang ◽  
Hongyu Chen ◽  
Lingxia Zheng ◽  
Mingxiang Hu ◽  
...  
Keyword(s):  
Efficiency Enhancement ◽  
Metal Contacts ◽  
Uv Photodetectors ◽  
Ag Nanowires ◽  
Design Solutions ◽  
Self Powered ◽  
Ag Nanowire

We realized design solutions to enhance the photoresponsive performance of self-powered TiO2UV photodetectors by employing Ag nanowires as metal contacts.

Synthesis of large-area 2D WS2 films and fabrication of a heterostructure for self-powered ultraviolet photodetection and imaging applications

2019 ◽  
Vol 7 (39) ◽  
pp. 12121-12126 ◽  
Author(s):  
Zhihui Zhao ◽  
Di Wu ◽  
Jiawen Guo ◽  
Enping Wu ◽  
Cheng Jia ◽  
...  
Keyword(s):  
High Performance ◽  
Large Area ◽  
Uv Photodetector ◽  
Imaging Capability ◽  
Uv Imaging ◽  
Self Powered

High-performance self-powered ultraviolet (UV) photodetector based on a WS2/GaN heterojunction was demonstrated, which exhibits excellent UV photoresponse properties. Significantly, this photodetector has exhibited excellent UV imaging capability.

3D hierarchical MnO2 nanorod/welded Ag-nanowire-network composites for high-performance supercapacitor electrodes

2016 ◽  
Vol 52 (51) ◽  
pp. 7998-8001 ◽  
Author(s):  
Zhensong Qiao ◽  
Xiaopeng Yang ◽  
Shuhua Yang ◽  
Liqiang Zhang ◽  
Bingqiang Cao
Keyword(s):  
Manganese Dioxide ◽  
Specific Capacitance ◽  
High Performance ◽  
Nanowire Network ◽  
Ag Nanowire

Manganese dioxide nanorods were grown on a welded Ag nanowire-network for use as supercapacitor electrodes, showing ever-increasing specific capacitance.

Multifunctional zinc oxide thin films for high-performance UV photodetectors and nitrogen dioxide gas sensors

RSC Advances ◽  
2016 ◽  
Vol 6 (31) ◽  
pp. 25641-25650 ◽  
Author(s):  
S. K. Shaikh ◽  
V. V. Ganbavle ◽  
S. I. Inamdar ◽  
K. Y. Rajpure
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Nitrogen Dioxide ◽  
Gas Sensor ◽  
Gas Sensors ◽  
High Performance ◽  
Zno Thin Film ◽  
Uv Photodetector ◽  
Uv Photodetectors

Multifunctional use of ZnO thin film as NO2 gas sensor and UV photodetector.

scholarly journals PEDOT:PSS Overcoating Layer for Mechanically and Chemically Stable Ag Nanowire Flexible Transparent Electrode

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
Byungil Hwang ◽  
Sooman Lim
Keyword(s):  
Mechanical Stability ◽  
Transparent Electrode ◽  
Bending Tests ◽  
Nanowire Network ◽  
Microscope Images ◽  
Ag Nanowires ◽  
High Mechanical Stability ◽  
Ag Nanowire ◽  
Scanning Electron

We investigated the effect of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) deposition on the chemical and mechanical stability of Ag nanowire flexible electrodes. A large number of bending cycles, up to 500,000 cycles, were imposed on the Ag nanowire electrodes with and without PEDOT:PSS overcoating layer. In situ resistance measurement during bending tests revealed that the Ag nanowire electrode with PEDOT:PSS overcoating layer was mechanically reliable, showing a 21.9% increase in resistance after 500,000 cycles of bending. Scanning electron microscope images revealed that the failure of the Ag nanowire network occurred along with cracks initiated in the PEDOT:PSS layer, which resulted in the increase in resistance under bending. Furthermore, the PEDOT:PSS deposition enhanced the chemical stability of Ag nanowire electrode, which showed no significant increase in resistance after exposure in air for 50 days. Our study underscored that PEDOT:PSS is effective in protecting the Ag nanowires, while maintaining the high mechanical stability.

scholarly journals Dual role of Ag nanowires in ZnO quantum dot/Ag nanowire hybrid channel photo thin film transistors

RSC Advances ◽  
2018 ◽  
Vol 8 (15) ◽  
pp. 8349-8354 ◽  
Author(s):  
Weihao Wang ◽  
Xinhua Pan ◽  
Xiaoli Peng ◽  
Qiaoqi Lu ◽  
Fengzhi Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Dot ◽  
Thin Film Transistors ◽  
High Speed ◽  
Electronic Devices ◽  
High Mobility ◽  
Ag Nanowires ◽  
P Type ◽  
Ag Nanowire

High mobility and p-type thin film transistors (TFTs) are in urgent need for high-speed electronic devices.

scholarly journals Stretchable and Low-Haze Ag-Nanowire-Network 2-D Films Embedded into a Cross-linked Polydimethylsiloxane Elastomer

Nanomaterials ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 576 ◽  
Author(s):  
Ki-Wook Lee ◽  
Yong-Hoe Kim ◽  
Wen Du ◽  
Jin-Yeol Kim
Keyword(s):  
Aspect Ratio ◽  
Sheet Resistance ◽  
High Aspect Ratio ◽  
Transparent Electrode ◽  
Polyol Synthesis ◽  
Nanowire Network ◽  
Release Test ◽  
Ag Nanowires ◽  
Polydimethylsiloxane Elastomer ◽  
Ag Nanowire

We report the fabrication of stretchable transparent electrode films (STEF) using 15-nm-diameter Ag nanowires networks embedded into a cross-linked polydimethylsiloxane elastomer. 15-nm-diameter Ag NWs with a high aspect ratio (˃1000) were synthesized through pressure-induced polyol synthesis in the presence of AgCl particles with KBr. These Ag NW network-based STEF exhibited considerably low haze values (<1.5%) with a transparency of 90% despite the low sheet resistance of 20 Ω/sq. The STEF exhibited an outstanding mechanical elasticity of up to 20% and no visible change occurred in the sheet resistance after 100 cycles at a stretching-release test of 20%.

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