Atomic layer deposition and first principles modeling of glassy Li3BO3–Li2CO3 electrolytes for solid-state Li metal batteries

Current Solid Oxide Fuel Cell (SOFC) designs have operating temperatures between 800-1000 °C. Reducing this temperature to 500-600 °C would allow efficient utilization in varied applications. Yttria Doped Ceria (YDC) films show high ionic conductivity when used as fuel cell electrolytes in lower temperature ranges. This investigation shows that stoichiometric tunability of YDC film composition can be achieved through Atomic Layer Deposition (ALD). Film resistivity at room temperature is measured using a custom four-point probe sensor Film resistance analysis provides a method for evaluating the effect of doping and thickness of the film on desirable SOFC electrolyte characteristics such as high ionic conductivity.

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Nanoscale Solid State Batteries Enabled by Thermal Atomic Layer Deposition of a Lithium Polyphosphazene Solid State Electrolyte

Chemistry of Materials ◽

10.1021/acs.chemmater.7b00805 ◽

2017 ◽

Vol 29 (8) ◽

pp. 3740-3753 ◽

Cited By ~ 62

Author(s):

Alexander J. Pearse ◽

Thomas E. Schmitt ◽

Elliot J. Fuller ◽

Farid El-Gabaly ◽

Chuan-Fu Lin ◽

...

Keyword(s):

Solid State ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Solid State Electrolyte ◽

Layer Deposition ◽

Solid State Batteries

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Impact of the atomic layer deposition precursors diffusion on solid-state carbon nanotube based supercapacitors performances

Nanotechnology ◽

10.1088/0957-4484/26/6/064002 ◽

2015 ◽

Vol 26 (6) ◽

pp. 064002 ◽

Cited By ~ 16

Author(s):

Giuseppe Fiorentino ◽

Sten Vollebregt ◽

F D Tichelaar ◽

Ryoichi Ishihara ◽

Pasqualina M Sarro

Keyword(s):

Carbon Nanotube ◽

Solid State ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Layer Deposition

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Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries

Chemistry of Materials ◽

10.1021/acs.chemmater.7b04666 ◽

2018 ◽

Vol 30 (8) ◽

pp. 2526-2534 ◽

Cited By ~ 7

Author(s):

David M. Stewart ◽

Alexander J. Pearse ◽

Nam S. Kim ◽

Elliot J. Fuller ◽

A. Alec Talin ◽

...

Keyword(s):

Solid State ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Layer Deposition ◽

Solid State Batteries

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First-principles study of the surface reactions of aminosilane precursors over WO3(001) during atomic layer deposition of SiO2

RSC Advances ◽

10.1039/d0ra01635g ◽

2020 ◽

Vol 10 (28) ◽

pp. 16584-16592

Author(s):

Kyungtae Lee ◽

Youngseon Shim

Keyword(s):

Atomic Layer Deposition ◽

First Principles ◽

Surface Reactions ◽

Atomic Layer ◽

Reaction Pathways ◽

Energy Diagram ◽

First Principles Study ◽

Layer Deposition

Energy diagram of reaction pathways for decomposition of different aminosilane precursors on a WO3 (001) surface.

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Dissociation reaction of B2H6 on TiN surfaces during atomic layer deposition: first-principles study

RSC Advances ◽

10.1039/c7ra11291b ◽

2017 ◽

Vol 7 (88) ◽

pp. 55750-55755 ◽

Cited By ~ 6

Author(s):

Hwanyeol Park ◽

Sungwoo Lee ◽

Ho Jun Kim ◽

Euijoon Yoon ◽

Gun-Do Lee

Keyword(s):

Atomic Layer Deposition ◽

First Principles ◽

Atomic Layer ◽

Fabrication Process ◽

Device Performance ◽

Memory Devices ◽

Dissociation Reaction ◽

First Principles Study ◽

Layer Deposition

In the fabrication process of memory devices, a void-free tungsten (W) gate process with good conformability is very important for improving the conductivity of the W gate, leading to enhancement of device performance.

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