High-performance WO3−x-WSe2/SiO2/n-Si heterojunction near-infrared photodetector via a homo-doping strategy
2018 ◽
Vol 6
(21)
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pp. 5821-5829
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Keyword(s):
The enhanced performance of WO3−x-WSe2/SiO2/n-Si can be mainly attributed to the down-shift of the EF of WO3−x-WSe2, which results in a larger interface barrier height and a greatly reduced dark current.
Keyword(s):
2017 ◽
Vol 32
(6)
◽
pp. 065015
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Keyword(s):