Abstract
Tin sulfide semiconductor nanowires (NWs) have been widely investigated for photodetection applications because of their good optical and electrical properties. Herein, we synthesized n-type SnS2 NWs and then fabricated SnS2 NW photodetectors with a ferroelectric polymer side-gate. The strong electric field induced by ferroelectric polymer can effectively suppress the dark current and improve the detectivity in SnS2 NW photodetectors. The photodetectors after polarization depletion exhibit a high photoconductive gain of 4.0 × 105 and a high responsivity of 2.1 × 105 A W−1. Compared with devices without polarization depletion, the detectivity of polarization-depleted photodetectors is improved by at least two orders of magnitude, and the highest detectivity is 1.3 × 1016 Jones. Further, the rise and fall time are 56 and 91 ms respectively, which are about tens of times faster than those without polarization depletion. The device also shows a good spectral response from ultraviolet to near-infrared. This study demonstrates that ferroelectric materials can enhance optoelectronic properties of low-dimensional semiconductors for high-performance photodetectors.
High-detectivity tin disulfide nanowire photodetectors with manipulation of localized ferroelectric polarization field
